New Product FGP50B thru FGP50D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER® • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability GP20 • Meets environmental standard MIL-S-19500 • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 5.0 A VRRM 100 V to 200 V IFSM 135 A trr 35 ns VF 0.95 V IR 5.0 μA TJ max. 175 °C For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. MECHANICAL DATA Case: GP20, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL FGP50B FGP50C FGP50D UNIT Maximum repetitive peak reverse voltage VRRM 100 150 200 V Maximum RMS voltage VRMS 70 105 140 V Maximum DC blocking voltage VDC 100 150 200 V Maximum average forward rectified current 0.375" (9.5 mm) lead length (fig. 1) IF(AV) 5.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 135 A TJ, TSTG - 65 to + 175 °C Operating junction and storage temperature range Document Number: 88879 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product FGP50B thru FGP50D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 5.0 A SYMBOL FGP50C VF (1) TA = 25 °C Maximum DC reverse current at rated DC blocking voltage FGP50B FGP50D UNIT 0.95 V 5.0 IR TA = 100 °C μA 50 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 35 ns Typical junction capacitance 4.0 V, 1 MHz CJ 100 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance FGP50B FGP50C RJA (1) 60 RJL (2) 20 FGP50D UNIT °C/W Notes Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsinks (2) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length and mounted on PCB (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE FGP50D-E3/54 1.01 54 1400 13" diameter paper tape and reel FGP50D-E3/73 1.01 73 2000 Ammo pack packaging FGP50DHE3/54 (1) 1.01 54 1400 13" diameter paper tape and reel FGP50DHE3/73 (1) 1.01 73 2000 Ammo pack packaging Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 175 30 mm x 30 mm Copper Heatsinks Peak Forward Surge Current (A) Average Forward Rectified Current (A) 6 5 4 3 2 1 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 150 125 100 75 50 25 0 0 0 25 50 75 100 125 150 175 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88879 [email protected], [email protected], [email protected] Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product FGP50B thru FGP50D Vishay General Semiconductor 1000 TJ = 175 °C 10 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 150 °C TJ = 125 °C 1 TJ = 25 °C 0.1 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 0.01 0.2 100 10 1 0.4 0.6 0.8 1.0 1.2 0.1 1 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Instantaneous Reverse Leakage Current (μA) 100 TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) GP20 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07) 0.037 (0.94) DIA. Document Number: 88879 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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