GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier condition ® structure for high reliability • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 μA • Low forward voltage drop • High forward surge capability • Meets environmental standard MIL-S-19500 DO-201AD • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high voltage rectification of power supply, inverters, converters, freewheeling diodes and snubber circuit application. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 50 V to 1000 V IFSM 125 A IR 5.0 μA VF 1.2 V, 1.1 V TJ max. 175 °C MECHANICAL DATA Case: DO-201AD, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GP30A Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 125 A Maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length at TA = 55 °C IR(AV) 100 μA TJ, TSTG - 65 to + 175 °C Operating junction and storage temperature range Document Number: 88640 Revision: 15-Mar-11 GP30B GP30D GP30G GP30J GP30K GP30M UNIT For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GP30A thru GP30M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage SYMBOL 3.0 A Maximum reverse current at rated DC blocking voltage VF GP30A GP30B GP30D GP30G 1.2 GP30J GP30K GP30M UNIT 1.1 TA = 25 °C V 5.0 IR μA TA = 125 °C 100 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 V, Irr = 0.25 A trr 5.0 μs Typical junction capacitance 4.0 V, 1 MHz CJ 40 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance GP30A GP30B GP30D GP30G RJA (1) 20 RJL (1) 10 GP30J GP30K GP30M UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GP30J-E3/54 1.28 54 1400 13" diameter paper tape and reel GP30J-E3/73 1.28 73 1000 Ammo pack packaging GP30JHE3/54 (1) 1.28 54 1400 13" diameter paper tape and reel GP30JHE3/73 (1) 1.28 73 1000 Ammo pack packaging Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 4.0 3.0 2.0 1.0 60 Hz Resistive or Inductive Load 0.375" (9.5 mm) Lead Length TJ = TJ Max. 8.3 ms Single Half Sine-Wave 100 10 0 0 25 50 75 100 125 150 175 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88640 [email protected], [email protected], [email protected] Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GP30A thru GP30M Vishay General Semiconductor 100 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 10 1 0.1 0.6 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 0.8 0.7 0.9 1.0 1.1 1.2 1.3 1 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Instantaneous Reverse Leakage Current (μA) 10 TJ = 125 °C 1 TJ = 75 °C 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 88640 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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