KM48C8004B, KM48C8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 8Mx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. • Extended Data Out Mode operation FEATURES • CAS-before-RAS refresh capability • Part Identification • RAS-only and Hidden refresh capability • Fast parallel test mode capability - KM48C8004B(5.0V, 8K Ref.) - KM48C8104B(5.0V, 4K Ref.) • TTL(5.0V) compatible inputs and outputs • Early Write or output enable controlled write • JEDEC Standard pinout • Active Power Dissipation Unit : mW • Available in Plastic SOJ and TSOP(II) packages • +5.0V±10% power supply Speed 8K 4K -45 550 715 -5 495 660 -6 • Refresh Cycles 440 605 Part NO. Refresh cycle 8K KM48C8104B 4K Normal 64ms RAS CAS W * Access mode & RAS only refresh mode : 8K cycle/64ms CAS-before-RAS & Hidden refresh mode : 4K cycle/64ms Control Clocks Refresh Timer Row Decoder Refresh Control Refresh Counter • Performance Range Speed tRAC tCAC tRC tHPC -45 45ns 12ns 74ns 17ns -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns A0~A12 (A0~A11)*1 Row Address Buffer A0~A9 (A0~A10)*1 Col. Address Buffer Vcc Vss VBB Generator Memory Array 8,388,608 x 8 Cells Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. Sense Amps & I/O KM48C8004B* FUNCTIONAL BLOCK DIAGRAM Refresh time Data in Buffer DQ0 to DQ7 Data out Buffer OE KM48C8004B, KM48C8104B CMOS DRAM PIN CONFIGURATION (Top Views) •KM48V80(1)04BS •KM48V80(1)04BK VCC DQ0 DQ1 DQ2 DQ3 N.C VCC W RAS A0 A1 A2 A3 A4 A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VSS DQ7 DQ6 DQ5 DQ4 VSS CAS OE A12(N.C)* A11 A10 A9 A8 A7 A6 VSS VCC DQ0 DQ1 DQ2 DQ3 N.C VCC W RAS A0 A1 A2 A3 A4 A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 (S : 400mil TSOP(II)) (K : 400mil SOJ) * (N.C) : N.C for 4K Refresh product Pin Name Pin Function A0 - A12 Address Inputs(8K Product) A0 - A11 Address Inputs(4K Product) DQ0 - 7 Data In/Out VSS Ground RAS Row Address Strobe CAS Column Address Strobe W Read/Write Input OE Data Output Enable VCC Power(+5.0V) N.C No Connection VSS DQ7 DQ6 DQ5 DQ4 VSS CAS OE A12(N.C)* A11 A10 A9 A8 A7 A6 VSS KM48C8004B, KM48C8104B CMOS DRAM ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Units VIN,VOUT -1.0 to +7.0 V Voltage on VCC supply relative to VSS VCC -1.0 to +7.0 V Storage Temperature Tstg -55 to +150 °C Power Dissipation PD 1 W Short Circuit Output Current IOS 50 mA Voltage on any pin relative to VSS * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C) Parameter Symbol Min Typ Max Units Supply Voltage VCC 4.5 5.0 5.5 V Ground VSS 0 0 0 V Input High Voltage VIH 2.4 - VCC+1.0*1 V Input Low Voltage VIL -1.0*2 - 0.8 V *1 : VCC+2.0V at pulse width≤20ns which is measured at VCC *2 : -2.0 at pulse width≤20ns which is measured at VSS DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.) Parameter Symbol Min Max Units Input Leakage Current (Any input 0≤VIN≤VCC+0.5V, all other pins not under test=0 Volt) II(L) -5 5 uA Output Leakage Current (Data out is disabled, 0V≤VOUT ≤VCC) IO(L) -5 5 uA Output High Voltage Level(IOH=-5mA) VOH 2.4 - V Output Low Voltage Level(IOL=4.2mA) VOL - 0.4 V KM48C8004B, KM48C8104B CMOS DRAM DC AND OPERATING CHARACTERISTICS (Continued) Symbol Power Max Speed Units KM48C8004B KM48C8104B ICC1 Don't care -45 -5 -6 100 90 80 130 120 110 mA mA mA ICC2 Normal Don't care 2 2 mA ICC3 Don't care -45 -5 -6 100 90 80 130 120 110 mA mA mA ICC4 Don't care -45 -5 -6 110 100 90 120 110 100 mA mA mA ICC5 Normal Don't care 1 1 mA ICC6 Don't care -45 -5 -6 100 90 80 130 120 110 mA mA mA ICC1 * : Operating Current (RAS and CAS, Address cycling @tRC=min.) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3 * : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.) ICC4 * : Extended Data Out Mode Current (RAS=VIL, CAS, Address cycling @tHPC =min.) ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V) ICC6 * : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min) *Note : ICC1 , ICC3 , ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 , ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4 , address can be changed maximum once within one EDO mode cycle time, tHPC . KM48C8004B, KM48C8104B CMOS DRAM CAPACITANCE (TA=25°C, VCC=5.0V, f=1MHz) Parameter Symbol Min Max Units Input capacitance [A0 ~ A12] CIN1 - 5 pF Input capacitance [RAS, CAS, W, OE] CIN2 - 7 pF Output capacitance [DQ0 - DQ7] CDQ - 7 pF AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2) Test condition : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V Parameter -45 Symbol Min -5 Max Min -6 Max Min Units Note Max Random read or write cycle time tRC 74 84 104 ns Read-modify-write cycle time tRWC 101 113 138 ns Access time from RAS tRAC 45 50 60 ns 3,4,10 Access time from CAS tCAC 12 13 15 ns 3,4,5 Access time from column address tAA 23 25 30 ns 3,10 CAS to output in Low-Z tCLZ 3 ns 3 Output buffer turn-off delay from CAS tCEZ 3 OE to output in Low-Z tOLZ 3 Transition time (rise and fall) tT 1 RAS precharge time tRP 25 RAS pulse width tRAS 45 RAS hold time tRSH 8 8 10 ns CAS hold time tCSH 35 38 40 ns CAS pulse width tCAS 7 5K 8 10K 10 10K ns RAS to CAS delay time tRCD 11 33 11 37 14 45 ns 4 RAS to column address delay time tRAD 9 22 9 25 12 30 ns 10 CAS to RAS precharge time tCRP 5 5 Row address set-up time tASR 0 Row address hold time tRAH 7 Column address set-up time tASC Column address hold time 3 13 3 3 13 3 50 1 50 30 10K 50 3 13 3 1 50 40 10K 60 ns 6,14 ns 3 ns 2 ns 10K ns 5 ns 0 0 ns 7 10 ns 0 0 0 ns tCAH 7 7 10 ns Column address to RAS lead time tRAL 23 25 30 ns Read command set-up time tRCS 0 0 0 ns 8 Read command hold time referenced to CAS tRCH 0 0 0 ns 8 Read command hold time referenced to RAS tRRH 0 0 0 ns Write command hold time tWCH 7 7 10 ns Write command pulse width tWP 6 7 10 ns Write command to RAS lead time tRWL 8 8 10 ns Write command to CAS lead time tCWL 7 7 10 ns Data set-up time tDS 0 0 0 ns 9 KM48C8004B, KM48C8104B CMOS DRAM AC CHARACTERISTICS (Continued) Parameter -45 Symbol Min Data hold time tDH Refresh period (4K, Normal) tREF Refresh period (8K, Normal) tREF Write command set-up time -5 Max 7 Min -6 Max 7 64 Min 10 64 64 64 Units Note ns 9 Max 64 ms 64 ms tWCS 0 0 0 ns 7 CAS to W delay time tCWD 24 27 32 ns 7 RAS to W delay time tRWD 57 64 77 ns 7 Column address to W delay time tAWD 35 39 47 ns 7 CAS set-up time (CAS -before-RAS refresh) tCSR 5 5 5 ns CAS hold time (CAS -before-RAS refresh) tCHR 10 10 10 ns RAS to CAS precharge time tRPC 5 5 5 ns Access time from CAS precharge tCPA Hyper Page cycle time tHPC 17 20 Hyper Page read-modify-write cycle time tHPRWC 47 CAS precharge time (Hyper page cycle) tCP 6.5 RAS pulse width (Hyper page cycle) 24 200K 28 ns 3 25 ns 13 47 56 ns 13 7 10 ns 50 200K 35 tRASP 45 RAS hold time from CAS precharge tRHCP 24 OE access time tOEA OE to data delay tOED 8 10 13 ns CAS precharge to W delay time tCPWD 36 41 52 ns Output buffer turn off delay time from OE tOEZ 3 OE command hold time tOEH 5 30 12 11 60 13 3 200K 35 13 5 ns 15 3 ns 13 5 ns ns 6 ns Write command set-up time (Test mode in) tWTS 10 10 10 ns 11 Write command hold time (Test mode in) tWTH 10 10 10 ns 11 W to RAS precharge time (C-B-R refresh) tWRP 10 10 10 ns W to RAS hold time (C-B-R refresh) tWRH 10 10 10 ns Output data hold time tDOH 4 5 5 ns Output buffer turn off delay from RAS tREZ 3 13 Output buffer turn off delay from W tWEZ 3 13 W to data delay tWED 8 15 15 ns OE to CAS hold time tOCH 5 5 5 ns CAS hold time to OE tCHO 5 5 5 ns OE precharge time tOEP 5 5 5 ns W pulse width (Hyper page cycle) tWPE 5 5 5 ns RAS pulse width (C-B-R self refresh) 3 13 3 13 3 13 ns 6,14 3 13 ns 6 tRASS 100 100 100 us 15,16,17 RAS precharge time (C-B-R self refresh) tRPS 74 90 110 ns 15,16,17 CAS hold time (C-B-R self refresh) tCHS -50 -50 -50 ns 15,16,17 KM48C8004B, KM48C8104B CMOS DRAM TEST MODE CYCLE Parameter ( Note 11 ) -45 Symbol Min -5 Max Min -6 Max Min Units Note Max Random read or write cycle time tRC 79 89 109 ns Read-modify-write cycle time tRWC 110 121 145 ns Access time from RAS tRAC 50 55 65 ns 3,4,10,12 Access time from CAS tCAC 17 18 20 ns 3,4,5,12 Access time from column address tAA 28 30 35 ns 3,10,12 RAS pulse width tRAS 50 10K 55 10K 65 10K ns CAS pulse width tCAS 12 10K 13 10K 15 10K ns RAS hold time tRSH 18 18 20 ns CAS hold time tCSH 39 43 50 ns Column Address to RAS lead time tRAL 28 30 35 ns CAS to W delay time tCWD 29 35 39 ns 7 RAS to W delay time tRWD 62 72 84 ns 7 Column Address to W delay time tAWD 40 47 54 ns 7 Hyper Page cycle time tHPC 22 25 30 ns 13 Hyper Page read-modify-write cycle time tHPRWC 52 53 61 ns 13 RAS pulse width (Hyper page cycle) tRASP 50 Access time from CAS precharge tCPA 29 OE access time tOEA 17 OE to data delay tOED 13 18 20 ns OE command hold time tOEH 13 18 20 ns 200K 55 200K 65 200K ns 33 40 ns 18 20 ns 3 KM48C8004B, KM48C8104B CMOS DRAM NOTES 1. An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles before proper device operation is achieved. 2. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 2ns for all inputs. 3. Measured with a load equivalent to 2 TTL load and 100pF. 4. Operation within the tRCD (max) limit insures that tRAC (max) can be met. tRCD (max) is specified as a reference point only. If tRCD is greater than the specified tRCD (max) limit, then access time is controlled exclusively by tCAC . 5. Assumes that tRCD ≥tRCD (max). 6. This parameter defines the time at which the output achieves the open circuit condition and is not referenced to Voh or Vol. 7. tWCS , tRWD , tCWD and tAWD are non restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS ≥tWCS (min), the cycle is an early write cycle and the data output will remain high impedance for the duration of the cycle. If tCWD ≥tCWD (min), tRWD ≥tRWD (min) and tAWD ≥tAWD (min), then the cycle is a read-modify-write cycle and the data output will contain the data read from the selected address. If neither of the above conditions is satisfied, the condition of the data out is indeterminate. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameters are referenced to CAS falling edge in early write cycles and to W falling edge in OE controlled write cycle and read-modify-write cycles. 10. Operation within the tRAD (max) limit insures that tRAC (max) can be met. tRAD (max) is specified as a reference point only. If tRAD is greater than the specified tRAD (max) limit, then access time is controlled by tAA. 11. These specifications are applied in the test mode. 12. In test mode read cycle, the value of tRAC , tAA, tCAC is delayed by 2ns to 5ns for the specified values. These parameters should be specified in test mode cycles by adding the above value to the specified value in this data sheet. 13. tASC ≥6ns, Assume tT = 2.0ns 14. If RAS goes high before CAS high going, the open circuit condition of the output is achieved by CAS high going. If CAS goes high before RAS high going, the open circuit condition of the output is achieved by RAS high going. 15. If tRASS ≥100us, then RAS precharge time must use tRPS instead of tRP. 16. For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K/8K) cycles of burst refresh must be executed within 64ms before and after self refresh, in order to meet refresh specification. 17. For distributed CAS-before-RAS with 15.6us interval CAS-before-RAS refresh should be executed with in 15.6us immediately before and after self refresh in order to meet refresh specification. KM48C8004B, KM48C8104B CMOS DRAM READ CYCLE tRC tRAS RAS VIL - tCSH tCRP CAS tRP VIH - tRCD tCRP tRSH VIH - tCAS VIL - tRAD tASR A VIH VIL - tRAH tRAL tASC tCAH ROW ADDRESS COLUMN ADDRESS tRCH tRCS W tRRH VIH VIL - tWEZ tCEZ tAA OE VIH - tOEZ tOEA VIL - tOLZ tCAC DQ0 ~ DQ3(7) VOH VOL - tRAC OPEN tCLZ tREZ DATA-OUT Don′t care Undefined KM48C8004B, KM48C8104B CMOS DRAM WRITE CYCLE ( EARLY WRITE ) NOTE : DOUT = OPEN tRC tRAS RAS tRP VIH VIL - tCSH tCRP CAS tRSH VIH - VIH VIL - tCRP tCAS VIL - tRAD tASR A tRCD tRAH tASC ROW ADDRESS tRAL tCAH COLUMN ADDRESS tCWL tRWL tWCS W OE VIH - tWCH tWP VIL - VIH VIL - DQ0 ~ DQ3(7) VIH VIL - tDS tDH DATA-IN Don′t care Undefined KM48C8004B, KM48C8104B CMOS DRAM WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : DOUT = OPEN tRC tRAS RAS VIL - tCSH tCRP CAS tRP VIH - tRCD tRSH tCAS VIH - tCRP VIL - tRAD tRAL tASR A VIH VIL - tRAH tASC tCAH COLUMN ADDRESS ROW ADDRESS tCWL tRWL W OE tWP VIH VIL - VIH VIL - DQ0 ~ DQ3(7) VIH VIL - tOED tDS tOEH tDH DATA-IN Don′t care Undefined KM48C8004B, KM48C8104B CMOS DRAM READ - MODIFY - WRITE CYCLE tRAS RAS tRP VIH VIL - tCRP CAS tRWC tRCD tRSH VIH - tCAS VIL - tRAD tASR tRAH tASC tCAH tCSH A VIH VIL - ROW ADDR COLUMN ADDRESS tAWD tRWL tCWD W tCWL VIH - tWP VIL - tRWD OE tOEA VIH VIL - DQ0 ~ DQ3(7) VI/OH VI/OL - tOLZ tCLZ tCAC tAA tOED tOEZ tRAC VALID DATA-OUT tDS tDH VALID DATA-IN Don′t care Undefined KM48C8004B, KM48C8104B CMOS DRAM HYPER PAGE READ CYCLE tRP tRASP RAS VIH VIL - ¡ó tRHCP tCSH tHPC tCRP CAS VIL - VIH VIL - tCP tCAS VIH - tCP tCAS tHPC tCP tCAS tCAS tRAD tASR A tRCD tHPC tRAH tASC ROW ADDR tCAH tASC COLUMN ADDRESS tCAH tASC COLUMN ADDRESS tCAH COLUMN ADDR tASC tCAH tREZ COLUMN ADDRESS tRAL tRCS W VIH - tCAC VIL - tAA tAA tCPA tOCH VIH - tOEA tCPA tCAC tCAC tAA tCPA OE tRRH tRCH tAA tCHO tOEP tOEA VIL - tOEP tCAC DQ0 ~ DQ3(7) VOH VOL - tDOH tRAC VALID DATA-OUT tOLZ tCLZ tOEZ tOEA tOEZ tOEZ VALID DATA-OUT VALID DATA-OUT VALID DATA-OUT Don′t care Undefined KM48C8004B, KM48C8104B CMOS DRAM HYPER PAGE WRITE CYCLE ( EARLY WRITE ) NOTE : DOUT = OPEN tRP tRASP RAS VIH - tRHCP VIL - ¡ó tHPC tCRP CAS tRCD tHPC VIH - tCAS VIL - tRSH tCP tCP tCAS tCAS tRAD ¡ó tCSH tASR A VIH VIL - tRAH tASC tCAH tASC tCAH tASC tCAH ¡ó ROW ADDR. COLUMN ADDRESS COLUMN ADDRESS ¡ó COLUMN ADDRESS tRAL tWCS W VIH - tWCH tWCS tWP tWP ¡ó tWCH tWP VIL - tCWL OE tWCS tWCH tCWL ¡ó VIH VIL - DQ0 ~ DQ3(7) VIH VIL - tCWL tRWL ¡ó tDS tDH tDS tDH tDS tDH ¡ó VALID DATA-IN VALID DATA-IN ¡ó VALID DATA-IN Don′t care Undefined KM48C8004B, KM48C8104B CMOS DRAM HYPER PAGE READ-MODIFY-WRITE CYCLE tRP tRASP RAS VIH - tCSH VIL - tCRP CAS tHPRWC tRCD tCAS VIL - VIH VIL - tCAS tRAD tRAH ROW ADDR tRAL tCAH tASC tCAH tASC COL. ADDR COL. ADDR tRCS W tCRP tCP VIH - tASR A tRSH tRWL tCWL tCWL VIH - tWP VIL - tWP tCWD tCWD tAWD tRWD OE VIH - tAWD tCPWD tOEA tOEA VIL - tOED tOED tCAC tAA DQ0 ~ DQ3(7) VI/OH VI/OL - tDH tOEZ tCAC tAA tDS tDH tOEZ tDS tRAC tCLZ tCLZ tOLZ VALID DATA-OUT VALID DATA-IN tOLZ VALID DATA-OUT VALID DATA-IN Don′t care Undefined KM48C8004B, KM48C8104B CMOS DRAM HYPER PAGE READ AND WRITE MIXED CYCLE tRP tRASP RAS VIH - READ(tCAC ) READ(tCPA ) tHPC VIH - tCP VIL - tASR A VIH VIL - tCAS tRAD tRAH tASC ROW ADDR tCAH COLUMN ADDRESS tCP tCAS tCAS tCAS tCAH tASC tRHCP tHPC tHPC tCP CAS READ(tAA ) WRITE VIL - tCAH tASC COLUMN ADDRESS tASC COL. ADDR tCAH COL. ADDR tRAL tRCS W tRCH tRCS tRCH tWCH tRCH tWCS VIH VIL - tWPE tCLZ tWED tCPA OE VIH VIL - DQ0 ~ DQ3(7) VI/OH VI/OL - tOEA tCAC tAA tWEZ tDH tWEZ tREZ tAA tDS tCLZ tRAC VALID DATA-OUT VALID DATA-OUT VALID DATA-IN VALID DATA-OUT Don′t care Undefined KM48C8004B, KM48C8104B CMOS DRAM RAS - ONLY REFRESH CYCLE* NOTE : W, OE, DIN = Don′t care DOUT = OPEN tRC VIH - RAS tRP tRAS VIL - tRPC tCRP tCRP VIH - CAS VIL - tASR VIH - A VIL - tRAH ROW ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : OE , A = Don′t care tRC tRP RAS VIH VIL - tRPC tCP CAS tRAS VIH - tRPC tCSR tCHR VIL - tWRP W tRP tWRH VIH VIL - DQ0 ~ DQ3(7) VOH VOL - tCEZ OPEN Don′t care Undefined KM48C8004B, KM48C8104B CMOS DRAM HIDDEN REFRESH CYCLE ( READ ) tRC RAS tRAS VIH - tRCD tRSH VIL - tASR VIH VIL - tRAH tRAL tASC ROW ADDRESS tCAH COLUMN ADDRESS tWRH tRCS W tCHR VIH - tRAD A tRP tRAS VIL - tCRP CAS tRC tRP VIH VIL - tAA OE VIH - tOEA VIL - tCEZ tOLZ tCAC DQ0 ~ DQ3(7) VOH VOL - tCLZ tRAC OPEN tREZ tWEZ tOEZ DATA-OUT Don′t care Undefined * In Hidden refresh cycle of 64Mb A-dile & B-die, when CAS signal transits from Low to High, the valid data may be cut off. KM48C8004B, KM48C8104B CMOS DRAM HIDDEN REFRESH CYCLE ( WRITE ) NOTE : DOUT = OPEN tRC RAS tRAS VIH - tRCD tRSH VIL - tASR VIH VIL - tRAH tASC ROW ADDRESS tRAL tCAH COLUMN ADDRESS tWRP tWCS W OE tCHR VIH - tRAD A tRP tRAS VIL - tCRP CAS tRC tRP VIH - tWRH tWCH tWP VIL - VIH VIL - tDS DQ0 ~ DQ3(7) VIH VIL - tDH DATA-IN Don′t care Undefined KM48C8004B, KM48C8104B CMOS DRAM CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : OE, A = Don′t care tRP RAS VIL - tRPS tRPC tRPC tCP VIH - CAS tRASS VIH - tCHS tCSR VIL - DQ0 ~ DQ3(7) VOH - tCEZ OPEN VOL - VIH - W VIL - tWRP tWRH TEST MODE IN CYCLE NOTE : OE , A = Don′t care tRC tRP RAS tRP tRAS VIH VIL - tRPC tRPC tCP CAS tCSR VIH - tWTS W tCHR VIL - tWTH VIH VIL - DQ0 ~ DQ3(7) VOH VOL - tOFF OPEN Don′t care Undefined KM48C8004B, KM48C8104B CMOS DRAM PACKAGE DIMENSION 32 SOJ 400mil Units : Inches (millimeters) 0.360 (9.15) 0.380 (9.65) 0.435 (11.06) 0.445 (11.30) 0.400 (10.16) #32 0.006 (0.15) 0.012 (0.30) #1 0.148 (3.76) MAX 0.027 (0.69) MIN 0.841 (21.36) MAX 0.820 (20.84) 0.830 (21.08) 0.0375 (0.95) 0.050 (1.27) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 32 TSOP(II) 400mil 0.455 (11.56) 0.471 (11.96) 0.400 (10.16) Units : Inches (millimeters) 0.004 (0.10) 0.010 (0.25) 0.841 (21.35) MAX 0.821 (20.85) 0.829 (21.05) 0.037 (0.95) 0.050 (1.27) 0.047 (1.20) MAX 0.010 (0.25) TYP 0.002 (0.05) MIN 0.012 (0.30) 0.020 (0.50) 0.018 (0.45) 0.030 (0.75) 0~8 O