DRAM MODULE KMM5321200C2W/C2WG 1Mx32 DRAM SIMM (1MX16 Base) Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG KMM5321200C2W/C2WG with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5321200C2W is a 1Mx32bits Dynamic RAM high density memory module. The Samsung KMM5321200C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5321200C2W is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. • Part Identification PERFORMANCE RANGE • JEDEC standard PDPin & pinout Speed tRAC tCAC tRC -5 50ns 15ns 90ns -6 60ns 15ns 110ns - KMM5321200C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5321200C2WG(1024 cycles/16ms Ref, SOJ, Gold) • Fast Page Mode Operation • CAS-before-RAS refresh capability • RAS-only refresh capability • TTL compatible inputs and outputs • Single +5V±10% power supply • PCB : Height(750mil), single sided component PIN CONFIGURATIONS PIN NAMES Pin Symbol Pin Symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 VSS DQ0 DQ16 DQ1 DQ17 DQ2 DQ18 DQ3 DQ19 Vcc NC A0 A1 A2 A3 A4 A5 A6 Res(A10) DQ4 DQ20 DQ5 DQ21 DQ6 DQ22 DQ7 DQ23 A7 Res(A11) Vcc A8 A9 Res(RAS1) RAS0 NC NC 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 NC NC Vss CAS0 CAS2 CAS3 CAS1 RAS0 Res(RAS1) NC W NC DQ8 DQ24 DQ9 DQ25 DQ10 DQ26 DQ11 DQ27 DQ12 DQ28 Vcc DQ29 DQ13 DQ30 DQ14 DQ31 DQ15 NC PD1 PD2 PD3 PD4 NC Vss Pin Name Function A0 - A9 Address Inputs DQ0 - DQ31 Data In/Out W Read/Write Enable RAS0 Row Address Strobe CAS0 - CAS3 Column Address Strobe PD1 -PD4 Presence Detect Vcc Power(+5V) Vss Ground NC No Connection Res Reserved Pin PRESENCE DETECT PINS (Optional) Pin 50NS 60NS PD1 PD2 PD3 PD4 Vss Vss Vss Vss Vss Vss NC NC * Pin connection changing available SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. -3- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG FUNCTIONAL BLOCK DIAGRAM RAS RAS0 CAS0 LCAS CAS1 UCAS U0 OE W A0-A9 RAS CAS2 LCAS CAS3 UCAS U1 OE W A0-A9 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 W A0-A9 Vcc .1 or .22uF Capacitor for each DRAM To all DRAMs Vss -4- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative to V SS Voltage on V CC supply relative to V SS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg Pd IOS -1 to +7.0 -1 to +7.0 -55 to +150 2 50 V V °C W mA * Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in tended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C) Item Symbol Min Typ Max Unit VCC VSS VIH VIL 4.5 0 2.4 5.0 0 - 5.5 0 V V V V Supply Voltage Ground Input High Voltage Input Low Voltage -1.0*2 VCC +1*1 0.8 *1 : VCC +2.0V/20ns, Pulse width is measured at VCC . *2 : -2.0V/20ns, Pulse width is measured at VSS. DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted) KMM5321200C2W/C2WG Symbol Speed ICC1 -5 -6 ICC2 Don′t care - 4 mA ICC3 -5 -6 - 300 280 mA mA ICC4 -5 -6 - 180 160 mA mA ICC5 Don′t care - 2 mA ICC6 -5 -6 - 300 280 mA mA II(L) IO(L) Don′t care -10 -5 10 5 uA uA VOH VOL Don′t care 2.4 - 0.4 V V Min Max - 300 280 Unit mA mA ICC1 : Operating Current * ( RAS, LCAS or UCAS, Address cycling @ tRC =min) ICC2 : Standby Current ( RAS=LCAS=UCAS=W=VIH) ICC3 : RAS Only Refresh Current * ( LCAS=UCAS=VIH , RAS cycling @ tRC =min) ICC4 : Fast Page Mode Current * ( RAS=VIL, LCAS or UCAS cycling : tPC =min) ICC5 : Standby Current ( RAS=LCAS=UCAS=W=Vcc-0.2V) ICC6 : CAS-Before-RAS Refresh Current * ( RAS and CAS cycling @ tRC =min) II(L) : Input Leakage Current (Any input 0 ≤VIN≤Vcc+0.5V, all other pins not under test=0 V) IO(L) : Output Leakage Current(Data Out is disabled, 0V ≤VOUT ≤Vcc) VOH : Output High Voltage Level (I OH = -5mA) VOL : Output Low Voltage Level (I OL = 4.2mA) * NOTE : ICC1 , ICC3 , ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In I CC1 and ICC3 , address can be changed maximum once while RAS=VIL. In ICC4 , address can be changed maximum once within one page mode cycle, tPC. -5- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG CAPACITANCE (TA = 25°C, VCC=5V, f = 1MHz) Item Input capacitance[A0-A9] Input capacitance[ W] Input capacitance[ RAS0] Input capacitance[ CAS0 - CAS3] Input/Output capacitance[DQ0-31] Symbol Min Max Unit CIN1 CIN2 CIN3 CIN4 CDQ - 30 30 25 20 20 pF pF pF pF pF AC CHARACTERISTICS (0°C≤TA≤70°C, VCC=5.0V±10%. See notes 1,2.) Test condition : Vih/Vil=2.4/0.8V, V oh/Vol=2.4/0.4V, output loading CL=100pF Parameter Random read or write cycle time Access time from RAS Access time from CAS Access time from column address CAS to output in Low-Z Output buffer turn-off delay Transition time(rise and fall) RAS precharge time RAS pulse width RAS hold time CAS hold time CAS pulse width RAS to CAS delay time RAS to column address delay time CAS to RAS precharge time Row address set-up time Row address hold time Column address set-up time Column address hold time Column address to RAS lead time Read command set-up time Read command hold referenced to CAS Read command hold referenced to RAS Write command hold time Write command pulse width Write command to RAS lead time Write command to CAS lead time Data-in set-up time Data-in hold time Refresh period Write command set-up time CAS setup time(CAS-before-RAS refresh) CAS hold time(CAS-before-RAS refresh) RAS precharge to CAS hold time Access time from CAS precharge Symbol tRC tRAC tCAC tAA tCLZ tOFF tT tRP tRAS tRSH tCSH tCAS tRCD tRAD tCRP tASR tRAH tASC tCAH tRAL tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tWCS tCSR tCHR tRPC tCPA -5 Min -6 Max 90 Min Max 110 50 Unit Note ns 60 ns 3,4 15 15 ns 3,4,5 25 30 ns 3,10 0 ns 3 0 13 0 0 15 ns 6 3 50 3 50 ns 2 10K ns 30 50 40 10K 13 60 ns 15 50 ns 60 ns 13 10K 15 10K ns 20 37 20 45 ns 4 15 25 15 30 ns 10 5 5 ns ns 0 0 10 10 ns 0 0 ns 10 10 ns 25 30 ns 0 0 ns 0 0 ns 8 0 0 ns 8 10 10 ns 10 10 ns 13 15 ns 13 15 ns 0 0 ns 9 10 10 ns 9 16 16 ms 0 0 ns 5 5 ns 10 10 ns 5 5 ns 30 -6- 35 ns 7 3 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG AC CHARACTERISTICS (0°C≤TA≤70°C, VCC=5.0V±10%. See notes 1,2.) Test condition : Vih/Vil=2.4/0.8V, V oh/Vol=2.4/0.4V, output loading CL=100pF Parameter Fast page mode cycle time CAS precharge time(Fast page cycle) RAS pulse width(Fast page cycle) W to RAS precharge time(C-B-R refresh) W to RAS hold time(C-B-R refresh) -5 Symbol Min tPC tCP tRASP tWRP tWRH -6 Max Min Max Unit 35 40 ns 10 10 ns 50 200K 60 200K Note ns 10 10 ns 10 10 ns NOTES 1. An initial pause of 200us is required after power-up followed by any 8 RAS-only or CAS-before-RAS refresh cycles before proper device operation is achieved. 7. tWCS is non-restrictive operating parameter. It is included in the data sheet as electrical characteristic s only. If tWCS ≥tWCS (min), the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 2. VIH(min) and V IL(max) are reference levels for measuring timing of input signals. Transition times are measured between V IH(min) and V IL(max) and are assumed to be 5ns for all inputs. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameter are referenced to the CAS leading edge in early write cycles. 3. Measured with a load equivalent to 2 TTL loads and 100pF. 4. Operation within the tRCD (max) limit insures that tRAC (max) can be met. tRCD (max) is specified as a reference point only. If tRCD is greater than the specified tRCD (max) limit, then access time is controlled exclusively by tCAC . 10. Operation within the tRAD (max) limit insures that tRAC (max) can be met. tRAD (max) is specified as reference point only. If tRAD is greater than the specified tRAD (max) limit, then access time is controlled by tAA . 5. Assumes that tRCD ≥tRCD (max). 6. This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V OH or VOL . -7- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG READ CYCLE tRC tRAS RAS tRP VIH VIL - tCSH tCRP CAS tRCD tCRP tRSH tCAS VIH VIL - tRAD tASR A VIH VIL - tRAH tASC ROW ADDRESS tRAL tCAH COLUMN ADDRESS tRCH tRCS W tRRH VIH VIL - tAA tOFF tCAC DQ VOH VOL - tRAC tCLZ OPEN DATA-OUT Don′t care Undefined -8- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG WRITE CYCLE ( EARLY WRITE ) NOTE : DOUT = OPEN tRAS RAS tRC tRP VIH VIL - tCSH tCRP CAS tRCD tRSH tCAS VIH VIL - tRAD tASR A tCRP VIH VIL - tRAH tASC ROW ADDRESS tRAL tCAH COLUMN ADDRESS tCWL tRWL tWCS W tWP VIL - tDS DQ tWCH VIH - VIH VIL - tDH DATA-IN Don′t care Undefined -9- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG FAST PAGE READ CYCLE NOTE : DOUT = OPEN tRP tRASP RAS VIH - tRHCP VIL - ¡ó tCRP CAS tRCD VIH - tRAD tASC VIL - VIH VIL - tCP tCAS tCAS tASR A tPC tCP tRSH tCAS ¡ó tCSH tRAH tCAH ROW ADDR tASC tCAH COLUMN ADDRESS COLUMN ADDRESS tASC ¡ó ¡ó tCAH COLUMN ADDRESS tRRH tRCS W tRCH tRCS VIH - tRCH VIL - tCAC tCAC tAA tOFF tCLZ tAA DQ ¡ó tRCS VOH VOL - tRAC tCLZ VALID DATA-OUT tCAC tAA tOFF tCLZ VALID DATA-OUT tOFF VALID DATA-OUT Don′t care Undefined - 10 - Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG FAST PAGE WRITE CYCLE ( EARLY WRITE ) NOTE : DOUT = OPEN tRP tRASP RAS tRHCP VIH VIL - ¡ó tPC tCRP CAS tRAD tASC VIL - VIL - tCSH tCAH tRAH tASC COLUMN ADDRESS ROW ADDR VIH - tWCH tCAH tASC ¡ó COLUMN ADDRESS tWCS ¡ó tWCH tWP tCAH COLUMN ADDRESS tWCS ¡ó tWCH tWP tWP VIL - tCWL tDS DQ tRSH tCAS ¡ó tWCS W tCP tCAS tCAS tASR A tRCD VIH - VIH - tPC tCP VIH VIL - tDH tCWL tDS tDH tDS tCWL tRWL tDH ¡ó VALID DATA-IN VALID DATA-IN ¡ó VALID DATA-IN Don′t care Undefined - 11 - Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG RAS - ONLY REFRESH CYCLE NOTE : W, OE, DIN = Don't care DOUT = OPEN tRAS RAS tRC tRP VIH VIL - tRPC tCRP CAS VIH VIL - tASR A tCRP VIH VIL - tRAH ROW ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : OE, A = Don't care tRC tRP RAS tRAS tRP VIH VIL - tRPC tCP CAS tRPC tCSR VIH - tWRP W tCHR VIL - tWRH VIH VIL - tOFF DQ VOH - OPEN VOL - Don′t care Undefined - 12 - Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG HIDDEN REFRESH CYCLE ( READ ) tRC tRC tRP tRAS RAS tRP VIH VIL - tCRP CAS tRAS tRCD tRSH tCHR VIH VIL - tRAD tASR A VIH VIL - tRAH tASC ROW ADDRESS tCAH COLUMN ADDRESS tWRH tRCS W tRRH tWRP VIH VIL - tAA tRAC DQ VOH VOL - tOFF tCAC tCLZ OPEN DATA-OUT Don′t care Undefined - 13 - Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG HIDDEN REFRESH CYCLE ( WRITE ) NOTE : DOUT = OPEN tRC RAS VIH - tRP tRCD tRSH tCHR VIH VIL - tRAD tASR A tRAS VIL - tCRP CAS tRC tRP tRAS VIH VIL - tRAH tASC ROW ADDRESS tCAH COLUMN ADDRESS tWRH tWRP W VIH - tWCS tWCH tWP VIL - tDS DQ VIH VIL - tDH DATA-IN Don′t care Undefined - 14 - Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE tRP RAS CAS VIH - tRAS VIL VIH - tCPT tCSR tRSH tCAS tCHR VIL - tRAL tASC A VIH VIL - READ CYCLE W DQ tWRP tWRH tRCS tRRH tAA tRCH tCAC VIH VIL - tOFF tCLZ VOH - DATA-OUT VOL - WRITE CYCLE W tCAH COLUMN ADDRESS tWRP tRWL tWRH tWCS VIH VIL - tCWL tWCH tWP tDS DQ VIH VIL - OPEN tDH DATA-IN Don′t care Undefined NOTE : This timing diagram is applied to all devices besides 16M DRAM 4th & 64M DRAM. - 15 - Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : OE, A = Don′t care tRP RAS tRASS tRPS VIH VIL - tRPC tRPC tCP CAS tCHS VIH - tCSR VIL - tOFF DQ VOH - OPEN VOL - tWRP W tWRH VIH VIL - TEST MODE IN CYCLE NOTE : OE, A = Don′t care tRC tRP RAS tRAS tRP VIH VIL - tRPC tCP CAS tRPC VIH - tCSR tWTS W tCHR VIL - tWTH VIH VIL - tOFF DQ VOH - OPEN VOL - Don′t care Undefined - 16 - Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG PACKAGE DIMENSIONS Units : Inches (millimeters) 4.250(107.95) 3.984(101.19) .133(3.38) .125 DIA±.002(3.18±.051) R.062(1.57) .400(10.16) .750(19.05) .250(6.35) .080(2.03) R.062±.004(R1.57±.10) .250(6.35) .125(3.17) .250(6.35) MIN 3.750(95.25) ( Front view ) ( Back view ) Gold & Solder Plating Lead .200(5.08) MAX .100(2.54) .010(.25)MAX MIN .050(1.27) .041±.004(1.04±.10) .054(1.37) .047(1.19) Tolerances : ±.005(.13) unless otherwise specified NOTE : The used device is 1Mx16 DRAM DRAM Part No. : KMM5321200C2W/C2WG -- KM416C1200CJ (400 mil) Revision History Rev 0.0 : Nov. 1997 - 17 - Rev. 0.0 (Nov. 1997)