VS-30CTH03PbF Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt® FEATURES Base common cathode 2 • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current TO-220AB • Compliant to RoHS Directive 2002/95/EC 2 Common cathode Anode • AEC-Q101 qualified Anode 1 3 DESCRIPTION/APPLICATIONS 300 V series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time. PRODUCT SUMMARY Package TO-220AB IF(AV) 2 x 15 A VR 300 V VF at IF 1.25 V trr typ. See Recovery table The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. TJ max. 175 °C Diode variation Common cathode These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VRRM per diode Average rectified forward current per device Non-repetitive peak surge current IF(AV) IFSM Operating junction and storage temperatures VALUES UNITS 300 V TC = 153 °C 15 TC = 25 °C 150 30 TJ, TStg A - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance Series inductance Document Number: 94016 Revision: 28-Apr-11 TEST CONDITIONS MIN. TYP. MAX. 300 - - IF = 15 A - 1.0 1.25 IF = 15 A, TJ = 125 °C - 0.85 0.95 IR = 100 μA UNITS V VR = VR rated - - 40 TJ = 125 °C, VR = VR rated - 8 200 CT VR = 300 V - 38 - pF LS Measured lead to lead 5 mm from package body - 8 - nH μA For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH03PbF Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS MIN. TYP. MAX. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - - 36 IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - - 30 TJ = 25 °C - 33 - - 48 - - 2.8 - - 6.5 - TJ = 125 °C Peak recovery current Reverse recovery charge IRRM Qrr TJ = 25 °C TJ = 125 °C IF = 15 A dIF/dt = 200 A/μs VR = 200 V UNITS ns A TJ = 25 °C - 46 - TJ = 125 °C - 160 - nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per diode Marking device www.vishay.com 2 SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 °C RthJC - - 1.4 °C/W Case style TO-220AB 30CTH03 For technical questions within your region, please contact one of the following: Document Number: 94016 [email protected], [email protected], [email protected] Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH03PbF Hyperfast Rectifier, 2 x 15 A FRED Pt® Vishay Semiconductors 100 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 0.4 TJ = 150 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) TJ = 175 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C TJ = 25 °C 0.01 0.001 0.6 0.8 1.0 1.2 1.4 0 1.6 50 100 150 200 250 300 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 0 50 100 150 200 250 300 ZthJC - Thermal Impedance (°C/W) VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94016 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH03PbF Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt® 100 IF = 15 A 170 TJ = 125 °C DC trr (ns) Allowable Case Temperature (°C) 180 160 TJ = 25 °C Square wave (D = 0.50) Rated VR applied 150 VR = 200 V See note (1) 140 0 5 10 15 20 10 100 25 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 20 1000 16 RMS limit TJ = 125 °C 12 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 8 4 Qrr (nC) Average Power Loss (W) IF = 15 A DC 5 TJ = 25 °C VR = 200 V 0 0 100 10 15 20 25 10 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 94016 [email protected], [email protected], [email protected] Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH03PbF Hyperfast Rectifier, 2 x 15 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94016 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH03PbF Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt® ORDERING INFORMATION TABLE Device code VS- 30 C T H 03 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - Circuit configuration: C = Common cathode 4 4 - Package: T = TO-220 4 5 - H = Hyperfast recovery 6 - Voltage rating (03 = 300 V) 7 - PbF = Lead (Pb)-free Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95222 Part marking information www.vishay.com/doc?95225 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 94016 [email protected], [email protected], [email protected] Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 ØP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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