VS-30EPH03PbF Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt® FEATURES Base common cathode 2 • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level 1 Cathode TO-247AC modified 3 Anode DESCRIPTION/APPLICATIONS 300 V series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package TO-247AC modified (2 pins) IF(AV) 30 A VR 300 V VF at IF 1.25 V trr typ. See Recovery table TJ max. 175 °C Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 300 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 143 °C 30 Non-repetitive peak surge current IFSM TJ = 25 °C 300 Operating junction and storage temperatures TJ, TStg A - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR TEST CONDITIONS MIN. TYP. MAX. 300 - - IF = 30 A - 1.08 1.25 IF = 30 A, TJ = 125 °C - 0.9 1.00 VR = VR rated - 0.05 60 TJ = 125 °C, VR = VR rated - 280 600 IR = 100 μA UNITS V Forward voltage VF Reverse leakage current IR Junction capacitance CT VR = 300 V - 90 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH Document Number: 94017 Revision: 04-Apr-11 μA For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPH03PbF Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V TJ = 25 °C - - 55 - 38 - - 52 - - 2.8 - - 7.3 - TJ = 25 °C - 53 - TJ = 125 °C - 190 - TJ = 125 °C Peak recovery current Reverse recovery charge IRRM Qrr TJ = 25 °C TJ = 125 °C IF = 30 A dIF/dt = - 200 A/μs VR = 200 V UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 °C Thermal resistance, junction to case per leg RthJC - 0.5 0.9 Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.4 - - 6.0 - g - 0.22 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf in) Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Marking device www.vishay.com 2 Case style TO-247AC modified °C/W 30EPH03 For technical questions within your region, please contact one of the following: Document Number: 94017 [email protected], [email protected], Revision: 04-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPH03PbF Ultrafast Rectifier, 30 A FRED Pt® 1000 100 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 0.2 TJ = 175 °C 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 1000 Vishay Semiconductors TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C 0.1 0.01 TJ = 25 °C 0.001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 50 150 100 250 200 300 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 100 50 150 200 250 300 ZthJC - Thermal Impedance (°C/W) VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.1 PDM 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 .. 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 . 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94017 Revision: 04-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPH03PbF Ultrafast Rectifier, 30 A FRED Pt® Vishay Semiconductors 100 170 DC 160 150 trr (ns) Allowable Case Temperature (°C) 180 Square wave (D = 0.50) Rated VR applied IF = 30 A, TJ = 125 °C 140 130 See note (1) 120 0 5 10 15 20 25 30 35 40 10 100 45 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 50 1000 40 IF = 30 A, TJ = 125 °C RMS limit 30 Qrr (nC) Average Power Loss (W) IF = 30 A, TJ = 25 °C D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 20 10 DC 0 0 10 20 30 40 50 100 IF = 30 A, TJ = 25 °C 10 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 94017 [email protected], [email protected], Revision: 04-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPH03PbF Ultrafast Rectifier, 30 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94017 Revision: 04-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPH03PbF Ultrafast Rectifier, 30 A FRED Pt® Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 E P H 03 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - Circuit configuration: E = Single diode 4 - Package: P = TO-247AC modified 5 - H = Hyperfast recovery 6 - Voltage rating (03 = 300 V) 7 - PbF = Lead (Pb)-free Tube standard pack quantity: 25 pieces LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95253 Part marking information www.vishay.com/doc?95255 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 94017 [email protected], [email protected], Revision: 04-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) ΦP E B (2) R/2 N A2 S (Datum B) Ø K M DBM ΦP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb Planting View A - A C 2x e A1 b4 0.10 M C A M (4) E1 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e K L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1