Ordering number:EN2924A NPN Triple Diffused Planar Silicon Transistor 2SC4256 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions · High breakdown voltage. · Small Cob. · Wide ASO. · High reliability (Adoption of HVP process). unit:mm 2010C [2SC4256] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3 14.0 5.6 1.2 0.8 2 3 2.7 1 0.4 2.55 Specifications 2.55 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO VEBO 1200 V Emitter-to-Base Voltage Collector Current IC 5 V 10 mA mA Collector Current (Pulse) ICP 30 Collector Dissipation 1.75 W Junction Temperature PC Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=1200V, IE=0 VEB=4V, IC=0 DC Current Gain hFE fT VCE=5V, IC=0.5mA VCE=10V, IC=0.5mA Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage VCE(sat) VBE(sat) Ratings min typ Unit max 10 1 µA 1 µA 60 6 IC=1mA, IB=0.2mA IC=1mA, IB=0.2mA MHz 5 V 2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=100µA, IE=0 1500 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 1200 V Emitter-to-Base Breakdown Voltage V(BR)EBO Cob Output Capacitance IE=100µA, IC=0 VCB=100V, f=1MHz 5 V 1.6 pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1598HA (KT)/D148MO, TS No.2924–1/3