UTC 2SD965B NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965B : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE *Pb-free plating product number: 2SD965BL ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta=25°C) Collector current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Tj TSTG RATINGS 40 30 7 750 5 150 -65 ~ +150 UNIT V V V mW A °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified) PARAMETER SYMBOL Collector-base breakdown voltage BVCBO Collector-emitter breakdown BVCEO voltage Emitter-base breakdown voltage BVEBO Collector cut-off current ICBO Emitter cut-off current IEBO hFE 1 DC current gain(note) hFE 2 hFE 3 Collector-emitter saturation voltage VCE(sat) Current gain bandwidth product fT Output capacitance Cob TEST CONDITIONS Ic=100µA,IE=0 Ic=1mA,IB=0 IE=10µA,Ic=0 VCB=30V,IE=0 VEB=7V,Ic=0 VCE=2V,Ic=1mA VCE=2V,Ic=0.5A VCE=2V,Ic=2A Ic=3A, IB= 0.1A VCE=6V,Ic=50mA VCB=20V,IE=0, f=1MHz MIN 40 30 TYP MAX UNIT V V 7 V nA nA 200 200 200 800 230 150 1 V MHz pF 150 50 CLASSIFICATION OF hFE2 RANK RANGE UTC Q 230-380 R 340-600 UNISONIC TECHNOLOGIES CO. LTD www.unisonic.com.tw S 560-800 1 QW-R201-078,B UTC 2SD965B NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTIC CURVES Fig.1 Static characteristics Fig.2 DC current Gain IB=3.0mA 10 IB=2.0mA 2.0 IB=1.5mA 1.5 IB=1.0mA IB=0.5mA 1.0 0 0.4 0.8 1.2 1.6 10 VCE=2V 10 10 2.0 2 1 0 -1 10 Collector-Emitter voltage ( V) 10 1 10 10 Current Gain-bandwidth product,f T(MHz) Saturation voltage (mV) 10 VBE(sat) 2 1 0 10 10 1 10 2 10 3 Ic,Collector current (mA) UTC 10 4 Fig.6 Collector output Capacitance 10 VCE=6V VCE(sat) 10 3 3 Ic=10*IB 10 10 Fig.5 Current gain-bandwidth product Fig.4 Saturation voltage 4 3 2 Ic,Collector current (mA) 10 4 10 10 10 Cob,Capacitance (pF) 0 10 Fig.3 Base-Emitter on Voltage 3 IB=2.5mA 2.5 HFE, DC current Gain Ic,Collector current (A) 3.0 2 1 0 10 0 10 1 10 2 10 3 10 10 10 3 f=1MHz IE=0 2 1 0 10 -1 Ic,Collector current (mA) UNISONIC TECHNOLOGIES CO. LTD www.unisonic.com.tw 10 0 10 1 10 2 Collector-Base voltage (V) 2 QW-R201-078,B UTC 2SD965B NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD www.unisonic.com.tw 3 QW-R201-078,B