SANYO 2SD2581

Ordering number:5818
NPN Triple Diffused Planar Silicon Transistor
2SD2581
Color TV Horizontal Deflection
Output Applications
Features
Package Dimensions
· High speed.
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
unit:mm
2039D
[2SD2581]
16.0
3.4
5.6
2.0
21.0
22.0
5.0
8.0
3.1
1.0
2.0
20.4
4.0
2.8
2.0
0.6
2
3
1:Base
2:Collector
3:Emitter
3.5
1
5.45
5.45
SANYO:TO3PML
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1500
V
Collector-to-Emitter Voltage
VCEO
VEBO
800
V
6
V
IC
10
A
Collector Current (pulse)
ICP
30
A
Collector Dissipation
PC
3.0
W
Junction Temperature
Tj
Storage Temperature
Tstg
Emitter-to-Base Voltage
Collector Current
70
W
150
˚C
–55 to +150
˚C
Tc=25˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditons
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=800V, IE=0
10
µA
Collector Cutoff Current
ICES
VCE=1500V, RBE=0
1.0
mA
1.0
mA
Collector Sustain Voltage
Emitter Cutoff Current
VCEO(sus) IC=100mA, IB=0
IEBO
VEB=4V, IC=0
800
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3098TS (KOTO) TA1138 No.5818-1/4
2SD2581
Continued from preceiding page.
Parameter
Symbol
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
DC Current Gain
min
typ
VCE=5V,
VCE=5V,
tf
IC=1A
IC=8A
Unit
max
IC=8A, IB=1.6A
IC=8A, IB=1.6A
hFE1
hFE2
Fall Time
Ratings
Conditons
5
V
1.5
V
20
35
5
8
IC=6A, IB1=1.2A, IB2=–2.4A
0.3
µs
Switching Time Test Circuit
PW=20µs
IB1
DC≤1%
IB2
OUTPUT
INPUT
RB
RL=33.3Ω
VR
+
50Ω
+
100µF
470µF
VBE=–2V
I C - VCE
VCE =5V
10
7
0.8A
0.6A
6
0.4A
5
0.2A
4
3
2
9
8
7
6
120
˚C
25˚C
- 40˚
C
8
1.2A
1.0A
Collector Current, IC – A
9
I C - VBE
11
6A 1.8A 2.0A
1.4A 1.
5
Ta =
10
Collector Current, IC – A
VCC=200V
4
3
2
1
1
0
0
IB = 0
1
2
3
4
5
6
7
8
9
0
0
10
0.2
0.4
Collector-to-Emitter Voltage, VCE – V
hFE - I C
7
DC Current Gain, hFE
Collector–to–Emitter
Saturation Voltage, VCE (sat) –V
5
Ta =120˚C
25˚C
2
-40˚C
10
7
5
3
2
7
5
3
2
0.1
3
5
7 1.0
2
3
Collector Current, IC – A
5
7 10
1.4
1.0
7
3
1.2
2
1.0
2
1.0
3
7
5
7 0.1
0.8
VCE(sat) - I C
7
IC / IB =5
5
VCE =5V
3
0.6
Base-to-Emitter Voltage, VBE – V
2
C
25˚
Ta= -40˚C
120˚C
7 0.1
2
3
5
7 1.0
2
3
5
7
10
2
Collector Current, IC – A
No.5818-2/4
2SD2581
SW Time - I C
7
t stg
Switching Time, SW Time – µs
Switching Time, SW Time – µs
5
3
2
1.0
7
5
tf
3
2 VCC =200V
IC / IB1 =5
0.1 IB2 / IB1 =2
R load
7
7 0.1
2
3
5
7 1.0
2
SW Time - I B2
10
7
3
5
7 10
5
t st
g
3
2
1.0
7
tf
5
3
2
0.1
7
7 0.1
2
2
3
Forward Bias A S O
Collector Current, IC – A
0W
1m
s
D
C
op
at
io
5
7
10
L=500µH
IB2 =-3A
Tc=25˚C
1 pulse
10
7
5
3
2
1.0
7
5
2
2
3
5
7 100
2
3
5
0.1
7 1000
5
Collector-to-Emitter Voltage, VCE – V
7
2
100
3
5
7 1000
2
3
5
Collector-to-Emitter Voltage, VCE – V
P C - Ta
4
3
3
n
0.1
7
5 Tc=25˚C
3 1 pulse
2
3
5 7 10
er
Collector Current, IC – A
µs
00
s
=7
1.0
7
5
3
2
2
1.0
3
2
=1
PT
0µ
30
PC
7
Reverse Bias A S O
5
IC
ms
10
10
7
5
3
2
5
Base Current, IB2 – A
Collector Current, IC – A
5
I
3 CP
2
VCC =200V
IC =6A
IB1 =1.2A
R load
P C - Tc
80
Collector Dissipation, PC – W
Collector Dissipation, PC – W
70
3
No
2
he
at
sin
k
1
0
0
20
40
60
80
100
120
Ambient Temperature, Ta – °C
140
160
60
40
20
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc – °C
No.5818-3/4
2SD2581
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 1998. Specifications and information herein are subject
to change without notice.
PS No.5818-4/4