Ordering number : ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features • • • Package Dimensions Wide ASO(Adoption of MBIT process). Micaless package facilitating easy mounting. High reliability. unit : mm 2041A [2SB1133 / 2SD1666] 4.5 2.8 5.6 18.1 16.0 3.2 3.5 7.2 10.0 2.4 14.0 1.6 1.2 0.7 0.75 2.55 ( ) : 2SB1133 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) 2.55 Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg 1 : Base 2 : Collector 3 : Emitter 2.4 Specifications 1 2 3 2.55 2.55 SANYO : TO-220ML Conditions Ratings (−)60 (−)60 (−)6 (−)3 (−)8 2 25 150 −40 to +150 Tc=25°C Unit V V V A A W W °C °C Electrical Characteristics a t Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE(1) hFE(2) Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)5V, IC=(--)0.5A VCE=(--)5V, IC=(--)3A min Ratings typ *70 20 max (--)100 (--)100 *280 Unit µA µA Continued on next page. * : The 2SB1133 / 2SD1666 are classified by 0.5A hFE as follows : Rank Q R S hFE 70 to 140 100 to 200 140 to 280 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72501 GI IM No.3031-1/4 2SB1133 / 2SD1666 Continued from preceding page. Symbol Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage fT Cob VCE(sat) VBE V(BR)CBO V(BR)CEO V(BR)EBO --50 --4 mA 5m A 2.5 --20mA --2.0 --15mA --1.5 --10mA --1.0 --5mA --0.5 IB=0 40mA 35mA 30mA 25mA 20mA 2.0 15mA 1.5 10mA 1.0 5mA --3 --5 --6 Collector to Emitter Voltage, VCE -- V 0 Collector Current, IC -- A --2.6 --2.0 25°C --40°C --1.6 0°C 4.0 5.0 6.0 --0.4 IT03737 2SD1666 VCE=5V 3.2 --2.8 Ta=1 2 3.0 IC -- VBE(on) 3.6 --3.2 --0.8 2.0 Collector to Emitter Voltage, VCE -- V 2SB1133 VCE= --5V --1.2 1.0 IT03736 IC -- VBE(on) --3.6 IB=0 0 --4 2.8 2.6 2.0 1.6 1.2 0.8 --40°C --2 25°C --1 Ta=1 20°C 0 Collector Current, IC -- A (--)1 (--)1 0.5 0 0.4 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base to Emitter On Voltage, VBE(on) -- V --1.4 0 0.2 0.4 3 DC Current Gain, hFE --40°C 100 7 1.0 1.2 1.4 IT03739 2SD1666 VCE=5V Ta=120°C 3 25°C 0.8 hFE -- IC 5 2SB1133 VCE= --5V Ta=120°C 2 0.6 Base to Emitter On Voltage, VBE(on) -- V IT03738 hFE -- IC 5 DC Current Gain, hFE MHz pF V V V V V IC -- VCE --40m Collector Current, IC -- A --2.5 Unit max (--)60 (--)60 (--)6 3.0 A --35mA --30mA --25mA Ratings typ (40)8 (110)60 (--)0.6 (--)0.7 min VCE=(--)5V, IC=(--)0.5A VCB=(--)10V, f=1MHz IC=(--)2A, IB=(--)0.2A VCE=(--)5V, IC=(--)0.5A IC=(--)1mA, IE=0 IC=(--)5mA, RBE=∞ IE=(--)1mA, IC=0 IC -- VCE --3.0 Collector Current, IC -- A Conditions 50m A 45m A Parameter 2 25°C 100 --40°C 5 5 3 3 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 IT03740 5 0.01 2 3 5 0.1 2 3 5 Collector Current, IC -- A 1.0 2 3 5 IT03741 No.3031-2/4 2SB1133 / 2SD1666 VCE(sat) -- IC 2 5 3 2 --0.1 0°C 2 1 Ta= 5 0°C --4 C ° 25 3 2 7 --0.01 2SD1666 IC/IB=10 1.0 Collector to Emitter Saturation Voltage, VCE(sat) -- V Collector to Emitter Saturation Voltage, VCE(sat) -- V --1.0 VCE(sat) -- IC 2 2SB1133 IC/IB=10 2 3 3 2 0.1 °C 120 Ta= °C --40 25°C 5 3 2 7 --0.1 5 2 3 7 --1.0 5 2 Collector Current, IC -- A 3 5 5 0.01 2 3 5 2 0.1 3 5 1.0 Base to Emitter Saturation Voltage, VBE(sat) -- V Base to Emitter Saturation Voltage, VBE(sat) -- V 2SD1666 IC/IB=10 Ta= --40°C 25°C 120° C 5 2 --0.01 3 5 2 --0.1 3 5 2 --1.0 Collector Current, IC -- A Ta= --40°C 7 25°C 120° C 5 3 5 5 0.01 2 3 5 7 5 3 2 3 5 1.0 2 10 3 5 IT03745 fT -- IC 3 2SB1133 VCE= --5V 2 0.1 Collector Current, IC -- A IT03744 Gain-Bandwidth Product, f T -- MHz Gain-Bandwidth Product, f T -- MHz 3 fT -- IC 100 2SD1666 VCE=5V 2 10 7 5 3 2 5 --0.01 2 3 5 2 --0.1 3 5 2 --1.0 3 Collector Current, IC -- A 5 5 --10 IT03746 Collector Dissipation, PC -- W s s s DC 2 1m m s 0µ 0m IC max Op era tio 1.0 n P C =2 5W 7 3 5 3 2 5 2 0.1 3 5 1.0 2 3 5 IT03747 PC -- Tc 2SB1133/2SD1666 50 5 3 10 10 2 28 100µs> ICP 0.01 Collector Current, IC -- A ASO 10 Collector Current, IC -- A 1.0 2 3 7 5 VBE(sat) -- IC 2 --1.0 5 3 IT03743 2SB1133 IC/IB=10 7 2 Collector Current, IC -- A IT03742 VBE(sat) -- IC 2 5 25 24 20 16 12 8 4 2SB1133/2SD1666 (For PNP minus sign is omitted) 0.1 2 3 5 7 --10 0 2 3 5 Collector to Emitter Voltage, VCE -- V 7 --100 IT03748 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT03749 No.3031-3/4 2SB1133 / 2SD1666 PC -- Ta 4 Collector Dissipation, PC -- W 2SB1133/2SD1666 3 2 No hea t si 1 nk 0 0 20 40 60 80 100 120 Amibient Tamperature, Ta -- °C 140 160 IT03765 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice. PS No.3031-4/4