Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · Capable of being used in the low frequency to high frequency range. unit:mm 2164 [2SA608N/2SC536N] Features 4.5 3.7 3.5 4.5 1.4max · Large current capacity and wide ASO. 0.45 14.0 13.7 0.6 1.27 4.0max 0.45 0.5 0.44 1 2.5 2 3 1 : Emitter 2 : Collector 3 : Base SANYO : NPA-WA 2.5 ( ) : 2SA608N Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–50)60 V Collector-to-Emitter Voltage VCEO VEBO (–)50 V IC (–)150 Collector Current (Pulse) ICP (–)400 mA Collector Dissipation 500 mW Junction Temperature PC Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Emitter-to-Base Voltage Collector Current (–)6 V mA Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(–)40V, IE=0 (–)0.1 µA Emitter Cutoff Current IEBO VEB=(–)5V, IC=0 (–)0.1 µA DC Current Gain hFE1 hFE2 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)0.1mA 160* 560* 70 Continued on next page. * The 2SA608N/2SC536N are classified by 1mA hFE as follow Rank F G hFE 160 to 320 280 to 560 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 10700TS (KOTO) TA-2543 No.6324–1/4 2SA608N/2SC536N Continued on preceding page. Parameter Symbol Gain-Bandwidth Product fT Output Capacitance Ratings Conditions min typ VCE=(–)6V, IC=(–)10mA Cob VCB=(–)6V, f=1MHz Unit max 200 MHz 3.0 pF (4.5) pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)100mA, IB=(–)10mA (–)0.3 V Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)100mA, IB=(–)10mA (–)1.0 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(–)10µA, IE=0 (–)60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(–)1mA, RBE=∞ (–)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO (–)6 V IC -- VCE 2SA608N µA --50 µA --45 A --40µ A --35µ --12 A --30µ --25µA --8 --20µA --15µA --10µA --4 IC -- VCE 20 Collector Current, IC – mA --16 Collector Current, IC – mA IE=(–)10µA, IC=0 --5µA 50µA 45µA 16 2SC536N 40µA 35µA 30µA 12 25µA 20µA 8 15µA 4 10µA IB=0 5µA IB=0 --20 --30 --40 Collector Current, IC – mA --200 --160 --120 Ta=7 5°C 25°C --25° C --40 30 40 50 IT00497 IC -- VBE 2SC536N VCE=6V 200 160 120 80 40 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE – V 0 25°C 7 5 1.0 1.2 IT00499 hFE -- IC 2SC536N VCE=6V 3 Ta=75°C 2 --25°C 100 25°C 7 5 3 2 2 --0.1 2 3 0.8 5 3 10 0.6 7 DC Current Gain, hFE Ta=75°C 2 --25°C 0.4 Base-to-Emitter Voltage, VBE – V 1000 5 100 0.2 IT00498 2SA608N VCE=--6V 7 3 --1.2 hFE -- IC 1000 DC Current Gain, hFE 20 240 2SA608N VCE=--6V --80 10 Collector-to-Emitter Voltage, VCE – V IT00496 IC -- VBE --240 Collector Current, IC – mA 0 0 --50 C --10 Collector-to-Emitter Voltage, VCE – V 25°C --25° C 0 Ta=75 ° 0 10 5 7--1.0 2 3 5 7 --10 2 3 5 7--100 2 3 Collector Current, IC – mA 5 7--1000 IT00500 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC – mA 2 3 5 7 1000 IT00501 No.6324–2/4 2SA608N/2SC536N Gain-Bandwidth Product, fT – MHz 2SA608N VCE=--6V 7 5 3 2 100 7 5 3 2 10 --1.0 2 3 5 7 --10 3 5 7 --100 2 3 2 100 7 5 3 2 Output Capacitance, Cob – pF 10 7 5 3 2 1.0 7 5 3 2 2 3 5 7 --1.0 2 3 5 7 --10 2 3 3 2 --0.1 7 5 3 2 3 5 7 100 2 3 5 7 1000 IT00503 3 2 10 7 5 3 2 1.0 7 5 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT00505 VCE(sat) -- IC 2SC536N IC / IB=10 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – V 5 2 2SC536N f=1MHz 1.0 2SA608N IC / IB=--10 7 5 7 10 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC --1.0 3 Cob -- VCB 0.1 0.1 5 7 --100 IT00504 Collector-to-Base Voltage, VCB -- V 2 100 7 5 2SA608N f=1MHz --0.1 Collector-to-Emitter Saturation Voltage, VCE (sat) – V 3 Collector Current, IC – mA 0.1 5 3 2 0.1 7 5 3 2 0.01 --0.01 2 --1.0 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT00506 Collector Current, IC – mA 1.0 ICP 5 7 10 2 3 10 IC ms 10 DC 100 7 5 0m s op era tio 3 n 2 10 7 5 3 2 5 7 100 2 3 5 7 1000 IT00507 PC -- Ta 600 3 2 3 2SA608N / 2SC536N For PNP, the polarity is reversed. 2SA608N / 2SC536N Collector Dissipation, PC – mW 7 5 2 Collector Current, IC – mA ASO 1000 Collector Current, IC – mA 5 10 1.0 Cob -- VCB 3 2 2SC536N VCE=6V 7 5 7--1000 IT00502 Collector Current, IC – mA 100 7 5 Output Capacitance, Cob – pF 2 f T -- IC 1000 Gain-Bandwidth Product, fT – MHz f T -- IC 1000 500 400 300 200 100 0 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE – V 5 7 100 IT00511 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 IT00510 No.6324–3/4 2SA608N/2SC536N Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2000. Specifications and information herein are subject to change without notice. PS No.6324–4/4