Ordering number : ENN7079 2SC5808 NPN Triple Diffused Planar Silicon Transistor 2SC5808 Switching Power Supply Applications Features [2SC5808] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 Package Dimensions unit : mm 2044B [2SC5808] 6.5 5.0 4 1.5 2.3 0.5 0.5 0.85 1 0.6 2.3 2 1.2 7.0 • unit : mm 2045B 5.5 • High breakdown voltage. High speed switching. Wide ASO. Adoption of MBIT process. 2.5 • 0.8 • Package Dimensions 3 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O2501 TS IM TA-3412 No.7079-1/4 2SC5808 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 700 V Collector-to-Emitter Voltage VCES 700 V Collector-to-Emitter Voltage VCEO 400 V Emitter-to-Base Voltage VEBO 8 V 2.5 A Collector Current IC Collector Current (Pulse) Base Current ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg PW≤300µs, duty cycle≤10% Tc=25°C 5 A 1.2 A 1 W 15 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE1 VCE=5V, IC=0.3A 20 DC Current Gain hFE2 hFE3 VCE=5V, IC=1.2A 10 VCE=5V, IC=1mA 10 fT VCE=10V, IC=0.3A 20 Cob VCB=10V, f=1MHz 20 Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) IC=1.2A, IB=0.24A IC=1.2A, IB=0.24A Gain-Bandwidth Product Output Capacitance Collector-to-Base Breakdown Voltage VCB=400V, IE=0 VEB=5V, IC=0 Collector-to-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO IC=1mA, IE=0 IC=5mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 VCC=200V, IC=1.5A, IB1=0.3A, IB2=--0.6A, RL=133Ω Turn-On Time ton Storage Time tstg Fall Time tf VCC=200V, IC=1.5A, IB1=0.3A, IB2=--0.6A, RL=133Ω VCC=200V, IC=1.5A, IB1=0.3A, IB2=--0.6A, RL=133Ω max Unit 10 µA 10 µA 50 MHz pF 0.8 V 1.5 V 700 V 400 V 8 V 0.5 µs 2.5 µs 0.25 µs Switching Time Test Circuit IB1 PW=20µs D.C.≤1% INPUT OUTPUT IB2 VR RB RL 50Ω + 100µF VBE= --5V + 470µF VCC=200V No.7079-2/4 2SC5808 IC -- VCE Collector Current, IC -- A 50 2.0 200mA 150mA 100mA 1.0 50mA 0.5 20mA 10mA 1 0 2 3 4 5 6 7 8 9 Collector-to-Emitter Voltage, VCE -- V 0 10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 Ta=120°C 25°C --40°C 3 2 10 7 5 3 2 1.0 0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A Switching Time, SW Time -- µs 120°C 5 25°C 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 7 5 ICP=5A s 1m 10 ms era op DC tio n 0.1 7 5 3 2 2 3 2 3 5 7 100 2 Collector-to-Emitter Voltage, VCE -- V 2 3 5 7 1.0 2 3 5 IT03722 SW Time -- IC IC / IB1=5 IB2 / IB1=2 R load tst g 2 1.0 7 5 tf 3 2 2 3 5 7 2 1.0 3 5 IT03724 Reverse Bias A S O 1.0 7 5 3 2 0.1 7 5 0.01 7 10 7 0.1 3 2 5 5 5 3 Tc=25°C Single pulse 0.01 1.0 3 2 s W 2 2 3 µs 15 3 25°C 7 5 00 P C= 1.0 7 5 120°C Collector Current, IC -- A Forward Bias A S O IC=2.5A Ta= --40°C IT03723 0µ 30 2 3 2 = Ta 0.1 0.1 5 =1 PT 3 C 0° 12 3 2 0.1 7 5 1.4 IT03720 Collector Current, IC -- A Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V Ta= --40°C 1.2 1.0 7 5 7 2 7 1.0 3 2 10 3 0.1 0.01 Collector Current, IC -- A 5 5 1.0 0.8 IC / IB=5 IT03721 IC / IB=5 7 0.6 VCE(sat) -- IC 0.01 0.01 VBE(sat) -- IC 10 0.4 Base-to-Emitter Voltage, VBE -- V VCE=5V 100 7 5 0.2 10 7 5 3 DC Current Gain, hFE 0 IT03719 hFE -- IC 1000 7 5 1.0 0.5 IB=0 0 1.5 25° C 1.5 2.0 --40 °C Collector Current, IC -- A VCE=5V 0mA 250mA 0mA 350mA 30 450mA 40 0mA 2.5 IC -- VBE 2.5 Ta= 120 °C 25°C --40° C 3.0 3 5 7 IT03725 L=500µH IB2= --0.5A Tc=25°C, Single pulse 10 2 3 5 7 100 2 3 5 Collector-to-Emitter Voltage, VCE -- V 7 1000 IT03726 No.7079-3/4 2SC5808 PC -- Ta 1.0 0.8 No he at 0.6 PC -- Tc 18 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 1.2 sin k 0.4 0.2 16 15 14 12 10 8 6 4 2 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03727 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT03728 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2001. Specifications and information herein are subject to change without notice. PS No.7079-4/4