Ordering number : EN2283B Silicon Planar Type DTA1 1.0A Bidirectional Thyristor Features • Low AC power control use. • Peak OFF-state voltage : 200 to 400V • RMS ON-state current : 1A • TO-92 package. Absolute Maximum Ratings at Ta=25°C Repetitive Peak OFF-StateVoltage RMS ON-State Current VDRM IT(RMS) Surge ON-State Current Amperes Squared-Seconds Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Junction Temperature Strage Temperature Weght ITSM ∫ i2T·dt PGM PG(AV) IGM VGM Tj Tstg DTA1C 200 DTA1E 400 → 1.0 Tc=74°C, single-phase full-wave Peak 1 cycle, 50Hz 1ms≤t≤10ms f≥50Hz, duty≤10% f≥50Hz, duty≤10% f≥50Hz, duty≤10% Electrical Characteristics at Ta=25°C Repetitive Peak OFF-State Current Peak ON-State Voltage Holding Current Gate Trigger Current* (I) (II) (III) (IV) Gate Trigger Voltage* (I) (II) (III) (IV) Gate Nontrigger Voltage Thermal Resistance Tj=25°C, VD=VDRM VTM IH IGT IGT IGT IGT VGT VGT VGT VGT VGD Rth(j-c) ITM=1.5A VD=12V, gate open VD=12V, RL=20Ω VD=12V, RL=20Ω VD=12V, RL=20Ω VD=12V, RL=20Ω VD=12V, RL=20Ω VD=12V, RL=20Ω VD=12V, RL=20Ω VD=12V, RL=20Ω Tc=125°C, VD=VDRM Between junction and case, AC * : The gate trigger mode is shown below. Trigger mode I II III IV T2 + + – – T1 – – + + A → → → → → → → 8 0.32 1 0.1 ±0.5 ±6 125 –40 to +125 → 0.2 min IDRM unit V A A2s W W A V °C °C g typ max 10 unit µA 1.5 10 5 5 V mA mA mA mA mA V V V V V °C/W 10 2 0.2 5 2 2 – 2 – 40 Package Dimensions 1192B (unit : mm) G + – + – SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN O0797GI/3089MO, TS No.2283-1/3 Gate Trigger Voltage, VGT – V Gate Trigger Current, IGT – mA Maximum Allowable Case Temperature, Tc max – °C Maximum Allowable Ambient Temperature, Ta max – °C Gate Current, IG – V Case Temperature, Tc – °C Average ON-State Power Dissipation, PT(AV) – W Gate Voltage, VG – V Surge ON-State Current, ITSM – A ON-State Current, IT – A DTA1 ON-State Voltage, VT – V Number of Cycles at 50Hz, n RMS ON-State Current, IT(RMS) – A RMS ON-State Current, IT(RMS) – A RMS ON-State Current, IT(RMS) – A Case Temperature, Tc – °C No.2283-2/3 Holding Current, IH – mA Transient Thermal Impedance, Rth(j-c) – °C/W DTA1 Case Temperature, Tc – °C Time, t – s IGT(tw) / IGT – % Pulse Trigger Characteristic Gate Trigger Pulse Width, tw – µs No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property lose. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 1997. Specifications and information herein are subject to change without notice. No.2283-3/3