SANYO FH104

Ordering number:ENN6218
NPN Epitaxial Planar Silicon Composite Transistor
FH104
High-Frequency Low-Noise Amplifier,
Differential Amplifier Applications
Package Dimensions
unit:mm
2149
[FH104]
0.25
6
5
4
E2
1 2
0.65
2.0
C1
TR2
E1
3
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
0.9
TR1
0 to 0.1
0.2
0.425
B2
1.25
2.1
Electrical Connection
B1
0.15
0.2
· Composite type with 2 transistors contained in the
MCP package currently in use, improving the
mounting efficiency greatly.
· The FH104 is formed with two chips equivalent to
the 2SC4853 placed in one package.
· Excellent in thermal equilibrium and pair capability.
0.425
Features
C2
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
12
V
Collector-to-Emitter Voltage
VCEO
VEBO
6
V
Emitter-to-Base Voltage
Collector Current
IC
PC
Collector Dissipation
Total Dissipation
Junction Temperature
PT
Tj
Storage Temperature
Tstg
1.5
V
15
mA
80
mW
150
mW
150
˚C
–55 to +150
˚C
1 unit
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=10V, IE=0
1.0
µA
Emitter Cutoff Current
IEBO
10
µA
DC Current Gain
hFE
hFE
VEB=1V, IC=0
VCE=1V, IC=1mA
90
VCE=1V, IC=1mA
0.7
DC Current Gain Ratio
(small/large)
Base-to-Emitter Voltage Difference
VBE
(large-small)
200
0.95
VCB=1V, IC=1mA
1.0
mV
Continued on next page.
Note) The specifications shown above are for each individual transistor. However, the ratings for hFE (small/large) and VBE (large-small) indicate pair
characteristics.
Marking : 104
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1099TS (KOTO) TA-2353 No.6218–1/4
FH104
Continued from preceding page.
Parameter
Symbol
Gain-Bandwidth Product
fT
Cob
Output Capacitance
Forward Transfer Gain
typ
5
VCB=1V, f=1MHz
0.6
VCE=1V, IC=1mA, f=1GHz
| S21e |2 2
VCE=2V, IC=3mA, f=1GHz
10.5
NF
VCE=1V, IC=1mA, f=1GHz
2.6
hFE -- IC
4.5
Gain-Bandwidth Product, fT – GHz
100
2V
1V
7
5
3
2
10
GHz
1.0
7
pF
dB
dB
4.5
dB
f T -- IC
2
V
CE
=
Unit
max
VCE=1V, IC=1mA
2
DC Current Gain, hFE
min
| S21e |2 1
Noise Figure
3
Ratings
Conditions
10
V
CE
=2
V
1V
7
5
3
2
1.0
7
5
7
5
5 7 0.1
3
2
3
5
7 1.0
2
3
5
7 10
2
Collector Current, IC – mA
3
2
5
5
7
2
1.0
3
5
7
IT00312
2
S21e -- IC
14
f=1GHz
Forward Transfer Gain, S21e – dB
1.0
12
V
=2
E
VC
2
Output Capacitance, Cob – pF
f=1MHz
7
5
3
2
0.1
7
5
5
10
1V
8
6
4
2
0
7 0.1
2
3
5
7 1.0
2
3
5
2
7 10
2
IT00313
3
5
2
1.0
3
5
S21e , NF -- VCE
14
7
IT00314
2
NF -- IC
10
7
Collector Current, IC – mA
Collector-to-Base Voltage, VCB -- V
f=1GHz
f=1GHz
12
IC=3mA
8
10
S21e – dB
6
S21e
2
1mA
8
2
Noise Figure, NF – dB
2
10
Collector Current, IC – mA
Cob -- VCB
2
3
IT00311
4
6
VCE=1V
4
2V
2
NF
2
IC=1mA
3mA
0
0
2
3
5
7
1.0
2
3
5
Collector Current, IC – mA
7
10
2
IT00315
0
1
2
3
4
5
6
Collector-to-Emitter Voltage,VCE – V
7
IT00316
No.6218–2/4
FH104
PC -- Ta
Collector Dissipation, PC – mW
160
150
140
120
100
To
t
al
80
D
iss
ip
1u
at
nit
60
io
n
40
20
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta – °C
160
IT00317
S parameter
f=200MHz to 2000MHz(200MHz Step)
S11e
f=200MHz to 2000MHz(200MHz Step)
S21e
90˚
j50
j100
j150
250
=1V
V CE 1mA
I C=
±180˚
GH
VCE=2V
IC=3mA
2.0
--j10
z
GH
2.0
2
4
6
8 10
0
0.2
150
30˚
z
z
100
50
GH
GH
25
0.2
z
10
VCE=2V
IC=3mA
150˚
j200
j250
j10
0
60˚
120˚
j25
V
C
IC= E=1V
1mA
--j25
0.2GHz
--j250
--j200
--j150
--30˚
--150˚
--j100
--60˚
--120˚
--j50
--90˚
IT00318
f=200MHz to 2000MHz(200MHz Step)
S12e
f=200MHz to 2000MHz(200MHz Step)
S22e
90˚
j50
V
=1
E mA
C
V =1
IC
0.2G
Hz
60˚
2.
0G
Hz
j25
j150
30˚
V
=2
E mA
C
V =3
IC
j200
j250
j10
0.05 0.10 0.15 0.20
±180˚
j100
0
0
10
100
50
2.0
--j10
--30˚
--150˚
25
GH
z
120˚
150˚
IT00319
--j25
150
250
z
VCE=2V .2GH
0
IC=3mA
--j250
--j200
--j150
VCE=1V
IC=1mA
--j100
--60˚
--120˚
--90˚
IT00320
--j50
IT00321
No.6218–3/4
FH104
S Parameters (Common emitter)
VCE=1V, IC=1mA, ZO=50Ω
Freq (MHz)
| S11 |
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
200
0.940
–17.9
3.228
159.6
0.058
77.1
0.972
–12.2
400
0.863
–33.7
2.983
143.7
0.107
66.6
0.914
–22.7
600
0.778
–48.0
2.732
129.9
0.145
58.1
0.844
–31.7
800
0.698
–60.5
2.469
117.7
0.173
50.9
0.773
–39.6
1000
0.608
–73.5
2.320
106.2
0.195
45.4
0.717
–46.0
1200
0.546
–84.7
2.106
96.3
0.210
40.9
0.668
–51.7
1400
0.470
–96.2
1.977
87.1
0.129
37.6
0.624
–56.5
1600
0.418
–106.4
1.826
78.8
0.224
35.3
0.590
–60.6
1800
0.388
–117.3
1.700
72.2
0.230
33.8
0.562
–64.3
2000
0.354
–127.0
1.615
65.9
0.234
32.9
0.546
–67.5
∠ S11
| S21 |
∠ S21
| S12 |
∠ S12
| S22 |
∠ S22
VCE=2V, IC=3mA, ZO=50Ω
Freq (MHz)
| S11 |
200
0.839
–30.6
7.428
149.3
0.050
71.4
0.916
–18.3
400
0.672
–53.7
6.016
128.5
0.083
60.6
0.778
–30.2
600
0.536
–71.7
4.908
113.6
0.105
55.1
0.672
–37.1
800
0.431
–85.7
4.073
101.9
0.121
52.5
0.597
–41.9
1000
0.360
–99.0
3.494
92.7
0.135
51.4
0.548
–45.7
1200
0.310
–111.4
3.033
84.4
0.150
50.9
0.514
–49.2
1400
0.265
–122.6
2.694
77.4
0.162
50.9
0.492
–52.3
1600
0.242
–134.7
2.422
70.9
0.175
51.0
0.475
–55.6
1800
0.228
–148.0
2.205
65.9
0.189
51.1
0.461
–59.0
2000
0.217
–157.2
2.061
60.8
0.205
51.0
0.456
–61.8
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 1999. Specifications and information herein are subject
to change without notice.
PS No.6218–4/4