SCH2202 Ordering number : ENN8043A SCH2202 NPN Epitaxial Planar Silicon Transistor Switching, Driver Applications Applications • Low-frequency power amplifier, high-speed switch, motor drivers, muting. Features • • • Composite type with 2 NPN transistor contained in a single package, facilitating high-density mounting. Ultrasmall package permitting applied sets to be small and slim. Small ON-resistance (Ron). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 Collector-to-Emitter Voltage VCEO 15 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC ICP PC Collector Current (Pulse) Collector Dissipation Junction Temperature Tj Storage Temperature Tstg 600 Mounted on a ceramic board (600mm2✕0.8mm) 1unit V mA 1.2 A 0.4 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product hFE fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage VCE(sat) Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Conditions VCB=15V, IE=0A VEB=4V, IC=0A VCE=2V, IC=10mA Ratings min typ max 300 Unit 100 nA 100 nA 800 VCE=2V, IC=50mA VCB=10V, f=1MHz 330 MHz IC=200mA, IB=10mA IC=200mA, IB=10mA 150 300 mV 0.9 1.2 V 3.2 pF 20 V V(BR)CEO IC=10µA, IE=0A IC=1mA, RBE=∞ 15 V V(BR)EBO IE=10µA, IC=0A 5 Marking : EF V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72905 MS IM TB-00001689 / N1504EA TS IM TA-100992 No.8043-1/4 SCH2202 Continued from preceding page. Parameter Symbol Turm-ON Time ton tstg tf Storage Time Fall Time Ratings Conditions min typ See specified test circuit. 30 ns See specified test circuit. 77 ns See specified test circuit. 40 ns Package Dimensions unit : mm 7028-004 Electrical Connection 6 5 4 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 1 2 3 Top view 1.6 0.2 1.5 2 3 0.5 0.56 0.05 1.6 0.05 0.2 6 5 4 1 Unit max 0.25 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 SANYO : SCH6 Switching Time Test Circuit IB1 PW=20µs D.C.≤1% OUTPUT IB2 INPUT RB VR RL 50Ω + 220µF + 470µF VBE= --5V VCC=5V IC=20IB1= --20IB2=400mA IC -- VCE 200 mA 0.9 0.5mA 120 0.4mA 100 0.3mA 80 0.2mA 60 0.1mA 40 600 500 400 Ta= 75° C 25°C --25 °C 0.6mA Collector Current, IC -- mA 700 160 140 VCE=2V 0.7mA 1.0mA Collector Current, IC -- mA 180 IC -- VBE 800 A 0.8m 300 200 100 20 IB=0mA 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Collector-to-Emitter Voltage, VCE -- V 1.8 2.0 IT05490 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT05491 No.8043-2/4 SCH2202 hFE -- IC 1000 DC Current Gain, hFE Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 25°C Ta=75°C 3 --25°C 2 100 7 5 3 1.0 2 3 5 7 10 2 3 5 7 100 2 3 VCE(sat) -- IC 1000 2 75 = Ta °C 5°C --2 5 °C 25 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 7 5 3 2 2 3 5 7 1.0 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V ON-resistance, Ron -- Ω °C 3 5 7 10 2 3 5 7 100 2 1kΩ 2 IB 3 2 1.0 7 5 3 5 7 1000 IT05493 VBE(sat) -- IC IC / IB=20 5 3 2 Ta= --25°C 1000 7 75°C 5 25°C 3 2 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05495 fT -- IC VCE=2V 5 3 2 100 7 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05496 Collector Current, IC -- mA PC -- Ta M 400 ou nt ed on ac er 300 am ic bo ar d( 60 200 0m m2 ✕0 .8m 100 m )1 un 2 0.1 0.1 3 OUT IN 10 7 5 2 500 1kΩ 3 25 2 IT05497 Ron -- IB f=1MHz 3 5 1.0 3 Collector Dissipation, PC -- mW 100 7 5 5 7 f=1MHz 1.0 0.1 = Ta Collector Current, IC -- mA Cob -- VCB 10 °C 75 C 5° --2 7 100 1.0 5 7 1000 IT05494 Collector Current, IC -- mA 100 Collector Current, IC -- mA Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 7 2 7 5 100 3 10000 IC / IB=50 7 5 10 1.0 5 7 1000 IT05492 Collector Current, IC -- mA IC / IB=20 7 7 5 VCE(sat) -- IC 1000 VCE=2V it 0 2 3 5 7 1.0 2 Base Current, IB -- mA 3 5 7 10 IT06067 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06712 No.8043-3/4 SCH2202 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2005. Specifications and information herein are subject to change without notice. PS No.8043-4/4