Ordering number : ENN5282A 2SC5291 NPN Epitaxial Planar Silicon Transistor 2SC5291 High-Voltage Switching Applications Features • • • • Package Dimensions Adoption of FBET, MBIT processes. Large current capacity. Can be provided in taping. 9.5mm onboard mounting height. unit : mm 2084B [2SC5291] 4.5 1.9 10.5 2.6 1.4 1.0 8.5 1.2 7.5 1.2 1.6 0.5 0.5 1 2 3 1 : Emitter 2 : Collector 3 : Base Specifications 2.5 Absolute Maximum Ratings at Ta=25°C Parameter Symbol 2.5 SANYO : FLP Conditions Ratings Unit Collector-to-Base Voltage VCBO 180 V Collector-to-Emitter Voltage VCEO 160 V Emitter-to-Base Voltage VEBO 6 V IC 1.5 A 2.5 A Base Current ICP IB 300 mA Collector Dissipation PC 1.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Collector Current Collector Current (Pulse) Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions Ratings min typ max VCB=120V, IE=0 VEB=4V, IC=0 Unit 1.0 µA 1.0 µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12201 TS IM TA-0376 No.5282-1/4 2SC5291 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max hFE1 hFE2 VCE=5V, IC=100mA 100 VCE=5V, IC=10mA 90 fT Cob VCE=10V, IC=50mA VCB=10V, f=1MHz 120 Collector-to-Emitter Saturation Voltage VCE(sat) 0.13 0.45 Base-to-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA IC=500mA, IB=50mA 0.85 1.2 DC Current Gain Gain-Bandwidth Product Output Capacitance Turn-ON Time Storage Time 400 MHz 14 pF V V ton tstg See specified Test Circuit 4.0 ns See specified Test Circuit 1.2 µs tf See specified Test Circuit 8.0 ns Fall Time * : The 2SC5291 is classified by 100mA hFE as follows : Rank R hFE S T 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 OUTPUT IB2 INPUT RB PW=20µs D.C.=≤1% RL 50Ω VR + 100µF + 470µF VBE= --5V VCC=100V 10IB1=--10IB2=IC=700mA RL=140Ω, RB=14Ω at IC=700mA IC -- VCE IC -- VCE 1.0 m A 1.8 5.0 50mA 40mA 30mA 1.4 1.2 Collector Current, IC -- A Collector Current, IC -- A 1.6 20mA 1.0 10mA 5mA 0.8 0.6 2mA 0.4 A 4.5m mA 4.0 3.5mA 0.8 3.0mA 2.5mA 0.6 2.0mA 1.5mA 0.4 1.0mA 0.2 1mA 0.5mA 0.2 0 IB=0 0 1 2 3 4 Collector-to-Emitter Voltage, VCE -- V 0 10 20 30 40 50 Collector-to-Emitter Voltage, VCE -- V ITR08045 IC -- VBE 1.6 IB=0 0 5 hFE -- IC 1000 VCE=5V ITR08046 VCE=5V 7 DC Current Gain, hFE 1.2 0.4 --25°C 5°C 25°C 0.8 Ta= 7 Collector Current, IC -- A 5 3 2 Ta=75°C 25°C --25°C 100 7 5 3 2 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 ITR08047 10 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR08048 No.5282-2/4 2SC5291 fT -- IC f=1MHz 7 3 2 100 7 5 3 2 (For PNP, minus sign is omitted.) 2 3 5 7 2 0.1 3 5 7 Collector Current, IC -- A 7 (For PNP, minus sign is omitted.) 2 3 5 7 2 10 3 5 7 100 ITR08050 VBE(sat) -- IC IC / IB=10 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 10 10 1000 7 5 3 2 100 7 25°C Ta=75°C 5 5 3 2 1.0 25°C Ta= --25°C 7 75°C 5 --25°C 3 7 0.01 2 3 5 7 2 0.1 3 5 7 1.0 Collector Current, IC -- A 2 3 3 ICP=2.5A 3 5 7 0.1 2 3 7 1.0 5 Collector Current, IC -- A 2 3 ITR08052 PC -- Ta 1.6 10 1.0 7 5 DC 3 op era 2 s s 1.4 Collector Dissipation, PC -- W ms 1m 10 0m tio 0.1 7 5 n 3 2 2 1.2 1.0 0.8 0.6 0.4 0.2 Tc=25°C Single pulse 1.0 2 1.5 IC=1.5A 5 7 7 0.01 ITR08051 Forward Bias A S O 5 0.01 7 5 2 Collector-to-Base Voltage, VCB -- V IC / IB=10 2 3 2 3 3 1 2 1.0 ITR08049 VCE(sat) -- IC 3 2 5 5 10 0.01 Collector Current, IC -- A Cob -- VCB 100 VCE=10V Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 5 3 5 7 10 2 3 5 Collector-to-Emitter Voltage, VCE -- 2 7 100 V ITR08053 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR08054 No.5282-3/4 2SC5291 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice. PS No.5282-4/4