SK 10 GD 123 Absolute Maximum Ratings Symbol Conditions IGBT 5-" 5'-" & &= $ 3 10 4! $ 3 10 :7 4; > 6 ; $ 3 10 :7 4; $? Values Units 6177 8 17 6. 66 /1 11 5 5 < < % @7 ,,, A 607 4 6: 61 /. 1@ < < % @7 ,,, A 607 4 Inverse/Freewheeling CAL diode ® SEMITOP 3 IGBT Module SK 10 GD 123 Preliminary Data Features ! " #$% &'$ ( ) *) +! , - ./0/1 Typical Applications " &2 " *#" &B &B= 3 % &= $ 3 10 :7 4; > 6 ; $ 3 10 :7 4; $? $ $ $! 67 % @7 ,,, A 610 1.7 4 4 5 < 07 +! ,,, 6 , C 6 1077 C /777 5 Characteristics Symbol Conditions IGBT 5- 5'- F?% & 3 67 <! $? 3 10 610 4 5- 3 5'-; & 3 7!777@ < 5- 3 10 5; 5'- 3 7 5; 6 =+ &'$ $ 3 10 4! min. typ. max. Units @!0 1!D /!/ 0!0 7!0/ /!1 /!E .!0 5 5 B GCH 6!: I 5 3 .77 5 ! 5'- 3 8 60 5 & 3 67 <! $? 3 610 4 F' 3 F' 3 07 J - A - & 2 GCH /7 @0 177 /0 1!/ K Inverse/Freewheeling CAL diode 5B 3 5- 5$ $ &B 3 67 <; $? 3 10 610 4 $? 3 610 4 $? 3 610 4 1 6!: 6 :7 F?% 1!0 1!/ 6!1 667 5 5 J 1!6 GCH &FF= L I &B 3 67 <; 5F 3 .77 5 &BC 3 %/77 <CM 61 6!: < M - 5'- 3 7 5; $? 3 610 4 7!@ K Mechanical data =6 N 1!0 /7 "-=&$#O / $ 61 GD 1 19-10-2005 RAM © by SEMIKRON SK 10 GD 123 Fig.5 Typ. output characteristic, tp = 80 µs, 25 °C Fig.6 Typ. output characteristic, tp = 80 µs, 125 °C Fig.7 Turn-on / -off energy = f (IC) Fig.8 Turn-on / -off energy = f (RG) Fig.9 Typ. gate charge characteristic Fig.10 Typ. capacitances vs. VCE 2 19-10-2005 RAM © by SEMIKRON SK 10 GD 123 Fig.11 Typ. switching times vs. IC Fig.12 Typ. switching times vs. gate resistor RG Fig.13 Diode turn-off energy dissipation per pulse 3 19-10-2005 RAM © by SEMIKRON SK 10 GD 123 UL Recognized File no. E 63532 Dimensions in mm $ 61 ' "*''-"$- )-&<=-$-F BF $- ")-F #& " < $- =* $& ' #& " & $#I 1 $ 61 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 19-10-2005 RAM © by SEMIKRON