SK50GB067 # 2 34 5) Absolute Maximum Ratings Symbol Conditions IGBT (*, #6 2 34 5 $ #6 2 :34 5 $>? 899 ( ;< / # 2 ;9 5 4= / 3=9 / @ 39 ( #6 2 :34 5 :9 D # 2 34 5 E9 / # 2 ;9 5 48 / $>?2 3 $ ( 2 <99 (A (%* B 39 (A (*, C 899 ( Inverse Diode IGBT Module $- SK50GB067 #6 2 :49 5 $->? $->?2 3 $- $-,? 2 :9 A SK50GAL067 Freewheeling Diode SK50GAR067 $- Target Data #6 2 :49 5 !"# $%# !& !"# !&" &# $%# "' ( ) * + + ' Typical Applications , -. / 0 , 1", $-,? <89 / # 2 34 5 E9 / # 2 ;9 5 48 / 2 A GAL #6 2 5 <89 / Module $>?, / #'6 &=9 FFF G:49 5 # &=9 FFF G:34 5 3499 ( ( /) : F # 2 34 5) Characteristics Symbol Conditions IGBT min. typ. max. Units < = 4 ( (%* (%* 2 (*) $ 2 :)3 / $*, (%* 2 9 () (* 2 (*, #6 2 34 5 9)99; / $%*, (* 2 9 () (%* 2 39 ( #6 2 34 5 =;9 / #6 2 :49 5 3 ( (*9 * (%* 2 :4 ( (* $ 2 :39 /) (%* 2 :4 ( #6 2 345 'F #6 2 :495 :3)4 H 3); <):4 ( #6 2 :345 'F <)4 = ( 2 : ?I 8 9)8 - 9)<8 - * 33 :9 J)4 3;9 38 K = K >6& 1 #6 2 5 / (* 2 34) (%* 2 9 ( >% 2 :: H >% 2 :: H * GB / $->? Features Units # 2 34 5 (%*, SEMITOP® 3 Values $%# ( 2 =99( $2 :39/ #6 2 :34 5 (%*2@:4( 9)=4 LM0 GAR 05-04-2007 DIL © by SEMIKRON SK50GB067 Characteristics Symbol Conditions Inverse Diode (- 2 (* $- 2 :39 /A (%* 2 9 ( min. #6 2 34 5 'F #6 2 :49 5 'F (-9 - IGBT Module 3 ( ( ( : ( #6 2 34 5 $>>? N $- 2 :39 / M 2 &:99 /MD * (2 =99( >6& ? O SK50GB067 Units :)34 H #6 2 :49 5 SEMITOP 3 max. #6 2 34 5 #6 2 :49 5 ® typ. = H #6 2 :34 5 / D K 3)34 3E 9); LM0 3)4 ! SK50GAL067 SK50GAR067 Target Data This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Features This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. !"# $%# !& !"# !&" &# $%# "' ( ) * + + ' Typical Applications , -. / 0 , 1", GB 2 GAL GAR 05-04-2007 DIL © by SEMIKRON SK50GB067 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 05-04-2007 DIL © by SEMIKRON SK50GB067 Fig. 7 Typ. switching times vs. IC 4 Fig. 8 Typ. switching times vs. gate resistor RG 05-04-2007 DIL © by SEMIKRON SK50GB067 UL recognized file no. E 63 532 #88 , ) ") P 3 # 88 5 % # 88 05-04-2007 DIL %/+ # 88 %/> © by SEMIKRON