FDME430NT N-Channel PowerTrench® MOSFET 30 V, 6 A, 40 mΩ Features General Description Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe. Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID = 4 A Applications Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Li-lon Battery Pack Free from halogenated compounds and antimony oxides Baseband Switch RoHS Compliant Load Switch DC-DC Conversion G D Pin 1 D D D D D G S S D D BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings 30 Units V ±12 V 6 30 Power Dissipation for Single Operation TA = 25 °C (Note 1a) 2.1 Power Dissipation for Single Operation TA = 25 °C (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 60 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 175 °C/W Package Marking and Ordering Information Device Marking YA Device FDME430NT ©2012 Fairchild Semiconductor Corporation FDME430NT Rev.C1 Package MicroFET 1.6x1.6 Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDME430NT N-Channel PowerTrench® MOSFET October 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±12 V, VDS = 0 V ±100 nA 1.5 V 30 V 22 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Drain to Source On Resistance gFS Forward Transconductance 0.6 0.8 -3 mV/°C VGS = 4.5 V, ID = 6 A 25 40 VGS = 2.5 V, ID = 5 A 29 51 VGS = 1.8 V, ID = 4 A 38 71 VGS = 4.5 V, ID = 6 A, TJ = 125 °C 34 54 VDS = 5 V, ID = 6 A 31 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0 V, f = 1 MHz 572 760 pF 74 100 pF 51 75 pF 7 14 ns 3 10 ns 19 34 ns 3.3 10 ns 6.5 9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = 15 V, ID = 6 A, VGS = 4.5 V, RGEN = 6 Ω Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 6 A, VGS = 4.5 V nC 0.9 nC 1.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 6 A (Note 2) 0.8 1.2 VGS = 0 V, IS = 1.6 A (Note 2) 0.7 1.2 V 12 22 ns 2.9 10 nC IF = 6 A, di/dt = 100 A/μs V Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 60 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 175 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. FDME430NT Rev.C1 2 www.fairchildsemi.com FDME430NT N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 30 3 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 3 V VGS = 2.5 V 20 VGS = 1.8 V 10 VGS = 1.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 VGS = 1.5 V 2 VGS = 1.8 V VGS = 2.5 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 2.0 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 ID = 6 A VGS = 4.5 V -50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 6 A 80 TJ = 125 oC 40 TJ = 25 oC 0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 30 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0.6 -75 20 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.4 VGS = 4.5 V VGS = 3 V VDS = 5 V 20 TJ = 150 oC 10 TJ = 25 oC TJ = -55 oC 0 0 1 2 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 3 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDME430NT Rev.C1 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDME430NT N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = 6 A Ciss VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = 15 V VDD = 20 V 1.5 Coss 100 Crss f = 1 MHz VGS = 0 V 10 0.1 0.0 0 2 4 6 8 1 Figure 7. Gate Charge Characteristics 1000 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 100 10 100 us 1 1 ms 10 ms 100 ms 1s 10 s DC THIS AREA IS LIMITED BY rDS(on) 0.1 SINGLE PULSE TJ = MAX RATED 0.01 RθJA = 175 oC/W CURVE BENT TO MEASURED DATA TA = 25 oC 0.001 0.1 1 10 100 SINGLE PULSE RθJA = 175 oC/W TA = 25 oC 100 10 1 0.1 -4 10 -3 10 -2 10 VDS, DRAIN to SOURCE VOLTAGE (V) 1 0.1 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 9. Forward Bias Safe Operating Area NORMALIZED THERMAL IMPEDANCE, ZθJA 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 175 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Junction-to-Ambient Transient Thermal Response Curve FDME430NT Rev.C1 4 www.fairchildsemi.com FDME430NT N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDME430NT N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout FDME430NT Rev.C1 5 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDME430NT Rev.C1 6 www.fairchildsemi.com FDME430NT N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ F-PFS™ PowerTrench® The Power Franchise® ® PowerXS™ AccuPower™ FRFET® Global Power ResourceSM Programmable Active Droop™ AX-CAP™* Green Bridge™ QFET® BitSiC® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™