74H1G66 SINGLE BILATERAL SWITCH ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) LOW ”ON” RESISTANCE RON = 50Ω (TYP.)AT VCC=9V II/O=100µA SINE WAVE DISTORTION 0.042% (TYP.) AT VCC=4V f=1KHz WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 12V DESCRIPTION The 74H1G66 is an high-speed CMOS SINGLE BILATERAL SWITCH fabricated in silicon gate C2MOS technology. It has high speed S (SOT23-5L) ORDER CODES : 74H1G66S performance combined with true CMOS low power consumption. The C input is provided to control the switch; the switch is ON when the C input is held high and off when C is held low. PIN CONNECTION AND IEC LOGIC SYMBOLS February 2000 1/8 74H1G66 LOGIC DIAGRAM PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCT ION 1 I/O Independent Input/Output 2 O/I Independent Output/Input 4 C Enable Input (Active HIGH) 3 GND Ground (0V) 5 VCC Positive Supply Voltage TRUTH TABLE CONTROL SWITCH F UNCTIO N H ON L OFF ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VI/O Parameter Value Supply Voltage Unit -0.5 to +13 V DC Input Voltage -0.5 to VCC +0.5 V DC Input/Output Voltage -0.5 to VCC + 0.5 V IIK Control Input DC Diode Current ± 20 mA IIOK Input/Output DC Diode Current ± 20 mA DC Output Source Sink Current Per Output Pin ± 25 mA ± 50 mA 500 (*) mW IO ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg Storage Temperature TL Lead Temperature (10 sec) -65 to +150 o 300 o C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. (*) 500mW: ≡ 65 oC derate to 300 mW by 10 mW/oC: 65 oC to85 oC RECOMMENDED OPERATING CONDITIONS Symbol VCC VI 2/8 Parameter Valu e Unit Supply Voltage 2.0 to 12 V Input Voltage (Control) 0 to VCC V VI/O Input/Output Voltage Top Operating Temperature tr, tf Input Rise and Fall Time 0 to VCC VCC = 2V V -40 to +85 o 0 to 1000 ns VCC = 4.5V 0 to 500 VCC = 6V 0 to 400 VCC = 10V 0 to 250 C 74H1G66 DC SPECIFICATIONS Symb ol VIH VIL Parameter High Level Input Voltage Low Level Input Voltage T est Cond ition s Value o ON Resistance -40 to 85 C Min. 2.0 1.5 1.5 4.5 3.15 3.15 9.0 6.3 6.3 12.0 8.4 Typ . Max. Min . Max. V 8.4 2.0 0.5 0.5 4.5 1.35 1.35 9.0 2.7 2.7 12.0 R ON Un it o T A = 25 C V CC (V) 4.5 9.0 12.0 4.5 9.0 12.0 IOFF Input/Output Leakage Current (SWITCH OFF) 12.0 IIZ Switch Input Leakage Current (SWITCH ON, OUTPUT OPEN) 12.0 IIN Control Input Current 6.0 ICC Quiescent Supply Current 9.0 3.6 3.6 V I = VIH V I/ O = V CC to GND I I /O ≤ 1mA 96 170 200 55 85 100 45 80 90 V I = VIH V I /O = V CC or GND I I /O ≤ 1mA 70 100 130 50 75 95 45 70 90 ±0.1 ±1.0 ±0.1 ±1.0 ±0.1 ±1.0 1 10 4 40 8 80 V OS = VCC to GND V IS = V CC to GND VI = VI L V OS = VCC to GND VI = VIH V I = V CC to G ND 6.0 12.0 V I = V CC or GND V Ω µA µA µA µA 3/8 74H1G66 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf =6 ns) Symb ol Parameter Test Co ndition Φ I/O Phase Difference Between Input and Output tPZL tPZH Output Enable Time tPLZ tPHZ Output Disable Time Maximum Control Input Frequency Value o Un it o 2.0 T A = 25 C Min. Typ . Max. 10 50 4.5 9.0 12.0 4 3 3 10 8 7 15 13 10 2.0 4.5 9.0 18 8 6 100 20 12 125 25 22 6 20 10 12 115 23 18 145 29 8 8 30 20 18 25 22 V CC (V) R L = 1 KΩ 12.0 2.0 4.5 9.0 12.0 2.0 4.5 9.0 12.0 R L = 1 KΩ R L = 1 KΩ C L = 15 pF V OUT = 1/2V CC -40 to 85 C Min . Max. 65 30 30 30 C IN Input Capacitance 5 CI/O Switch Terminal Capacitance 6 C IOS Feed Through Capacitance 0.5 CPD Power Dissipation Capacitance (note 1) 15 ns ns ns MHz 10 10 pF pF pF pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC •fIN + ICC ANALOG SWITCH CHARACTERISTICS (GND = 0 V, TA = 25oC) Symb ol fMAX 4/8 Parameter Test Co nditi on Sine Wave Distortion (THD) V CC (V) 4.5 9.0 V IN (Vp-p) 4 Frequency Responce (Switch ON) 4.5 9.0 Adjust fI N voltage to Obtain odBm at V OS . Increase fIN Frequency until dB Meter reads -3dB R L = 50Ω, C L = 10pF Feedthrough Attenuation (Switch OFF) 4.5 9.0 V IN is centered at VCC /2. Adjust input for 0dBm R L = 600Ω, C L = 50pF , fI N = 1MHz sine wave Crosstalk (Control Input to Signal Ouput) 4.5 9.0 R L = 600Ω, C L = 50pF , fI N = 1MHz sine wave (t r = t f = 6ns) fIN = 1 KHz RL = 10KΩ CL = 50 pF 8 Value Un it 0.05 0.04 % 200 200 MHz -60 -60 dB 60 100 mV 74H1G66 SWITCHING CHARACTERISTICS TEST CIRCUIT tPLZ, tPHZ, tPZL, tPZH. CROSSTALK (control to output) BANDWIDTH AND FEEDTHROUGH ATTENUATION GND (VSS) CI–O CI/O MAXIMUM CONTROL FREQUENCY GND (VSS) 5/8 74H1G66 CHANNEL RESITANCE (RON) 6/8 ICC (Opr.) 74H1G66 SOT23-5L MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.90 1.45 35.4 57.1 A1 0.00 0.15 0.0 5.9 A2 0.90 1.30 35.4 51.2 b 0.35 0.50 13.7 19.7 C 0.09 0.20 3.5 7.8 D 2.80 3.00 110.2 118.1 E 2.60 3.00 102.3 118.1 E1 1.50 1.75 59.0 68.8 L 0.35 0.55 13.7 21.6 e 0.95 37.4 e1 1.9 74.8 7/8 74H1G66 Information furnished is believed to be accurate and reliable. However, STMicroelectronic s assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics. 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