STMICROELECTRONICS 74H1G66


74H1G66
SINGLE BILATERAL SWITCH
■
■
■
■
■
■
HIGH SPEED: tPD = 4 ns (TYP.) at VCC = 5V
LOW POWER DISSIPATION:
ICC = 1 µA (MAX.) at TA = 25 oC
HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.)
LOW ”ON” RESISTANCE
RON = 50Ω (TYP.)AT VCC=9V II/O=100µA
SINE WAVE DISTORTION
0.042% (TYP.) AT VCC=4V f=1KHz
WIDE OPERATING VOLTAGE RANGE:
VCC (OPR) = 2V to 12V
DESCRIPTION
The 74H1G66 is an high-speed CMOS SINGLE
BILATERAL SWITCH fabricated in silicon gate
C2MOS technology. It has high speed
S
(SOT23-5L)
ORDER CODES :
74H1G66S
performance combined with true CMOS low
power consumption.
The C input is provided to control the switch; the
switch is ON when the C input is held high and off
when C is held low.
PIN CONNECTION AND IEC LOGIC SYMBOLS
February 2000
1/8
74H1G66
LOGIC DIAGRAM
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCT ION
1
I/O
Independent Input/Output
2
O/I
Independent Output/Input
4
C
Enable Input (Active
HIGH)
3
GND
Ground (0V)
5
VCC
Positive Supply Voltage
TRUTH TABLE
CONTROL
SWITCH F UNCTIO N
H
ON
L
OFF
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VI
VI/O
Parameter
Value
Supply Voltage
Unit
-0.5 to +13
V
DC Input Voltage
-0.5 to VCC +0.5
V
DC Input/Output Voltage
-0.5 to VCC + 0.5
V
IIK
Control Input DC Diode Current
± 20
mA
IIOK
Input/Output DC Diode Current
± 20
mA
DC Output Source Sink Current Per Output Pin
± 25
mA
± 50
mA
500 (*)
mW
IO
ICC or IGND DC VCC or Ground Current
PD
Power Dissipation
Tstg
Storage Temperature
TL
Lead Temperature (10 sec)
-65 to +150
o
300
o
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
(*) 500mW: ≡ 65 oC derate to 300 mW by 10 mW/oC: 65 oC to85 oC
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VI
2/8
Parameter
Valu e
Unit
Supply Voltage
2.0 to 12
V
Input Voltage (Control)
0 to VCC
V
VI/O
Input/Output Voltage
Top
Operating Temperature
tr, tf
Input Rise and Fall Time
0 to VCC
VCC = 2V
V
-40 to +85
o
0 to 1000
ns
VCC = 4.5V
0 to 500
VCC = 6V
0 to 400
VCC = 10V
0 to 250
C
74H1G66
DC SPECIFICATIONS
Symb ol
VIH
VIL
Parameter
High Level Input
Voltage
Low Level Input
Voltage
T est Cond ition s
Value
o
ON Resistance
-40 to 85 C
Min.
2.0
1.5
1.5
4.5
3.15
3.15
9.0
6.3
6.3
12.0
8.4
Typ .
Max.
Min .
Max.
V
8.4
2.0
0.5
0.5
4.5
1.35
1.35
9.0
2.7
2.7
12.0
R ON
Un it
o
T A = 25 C
V CC
(V)
4.5
9.0
12.0
4.5
9.0
12.0
IOFF
Input/Output Leakage
Current (SWITCH OFF)
12.0
IIZ
Switch Input Leakage
Current (SWITCH ON,
OUTPUT OPEN)
12.0
IIN
Control Input Current
6.0
ICC
Quiescent Supply
Current
9.0
3.6
3.6
V I = VIH
V I/ O = V CC to GND
I I /O ≤ 1mA
96
170
200
55
85
100
45
80
90
V I = VIH
V I /O = V CC or GND
I I /O ≤ 1mA
70
100
130
50
75
95
45
70
90
±0.1
±1.0
±0.1
±1.0
±0.1
±1.0
1
10
4
40
8
80
V OS = VCC to GND
V IS = V CC to GND
VI = VI L
V OS = VCC to GND
VI = VIH
V I = V CC to G ND
6.0
12.0
V I = V CC or GND
V
Ω
µA
µA
µA
µA
3/8
74H1G66
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf =6 ns)
Symb ol
Parameter
Test Co ndition
Φ I/O
Phase Difference
Between Input and
Output
tPZL
tPZH
Output Enable Time
tPLZ
tPHZ
Output Disable Time
Maximum Control
Input Frequency
Value
o
Un it
o
2.0
T A = 25 C
Min. Typ . Max.
10
50
4.5
9.0
12.0
4
3
3
10
8
7
15
13
10
2.0
4.5
9.0
18
8
6
100
20
12
125
25
22
6
20
10
12
115
23
18
145
29
8
8
30
20
18
25
22
V CC
(V)
R L = 1 KΩ
12.0
2.0
4.5
9.0
12.0
2.0
4.5
9.0
12.0
R L = 1 KΩ
R L = 1 KΩ
C L = 15 pF
V OUT = 1/2V CC
-40 to 85 C
Min . Max.
65
30
30
30
C IN
Input Capacitance
5
CI/O
Switch Terminal
Capacitance
6
C IOS
Feed Through
Capacitance
0.5
CPD
Power Dissipation
Capacitance (note 1)
15
ns
ns
ns
MHz
10
10
pF
pF
pF
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC •fIN + ICC
ANALOG SWITCH CHARACTERISTICS (GND = 0 V, TA = 25oC)
Symb ol
fMAX
4/8
Parameter
Test Co nditi on
Sine Wave Distortion
(THD)
V CC
(V)
4.5
9.0
V IN
(Vp-p)
4
Frequency Responce
(Switch ON)
4.5
9.0
Adjust fI N voltage to Obtain odBm at V OS .
Increase fIN Frequency until dB Meter reads -3dB
R L = 50Ω, C L = 10pF
Feedthrough
Attenuation
(Switch OFF)
4.5
9.0
V IN is centered at VCC /2. Adjust input for 0dBm
R L = 600Ω, C L = 50pF , fI N = 1MHz sine wave
Crosstalk (Control
Input to Signal Ouput)
4.5
9.0
R L = 600Ω, C L = 50pF , fI N = 1MHz sine wave
(t r = t f = 6ns)
fIN = 1 KHz
RL = 10KΩ
CL = 50 pF
8
Value
Un it
0.05
0.04
%
200
200
MHz
-60
-60
dB
60
100
mV
74H1G66
SWITCHING CHARACTERISTICS TEST CIRCUIT
tPLZ, tPHZ, tPZL, tPZH.
CROSSTALK (control to output)
BANDWIDTH AND FEEDTHROUGH
ATTENUATION
GND (VSS)
CI–O CI/O
MAXIMUM CONTROL FREQUENCY
GND (VSS)
5/8
74H1G66
CHANNEL RESITANCE (RON)
6/8
ICC (Opr.)
74H1G66
SOT23-5L MECHANICAL DATA
mm
DIM.
MIN.
TYP.
mils
MAX.
MIN.
TYP.
MAX.
A
0.90
1.45
35.4
57.1
A1
0.00
0.15
0.0
5.9
A2
0.90
1.30
35.4
51.2
b
0.35
0.50
13.7
19.7
C
0.09
0.20
3.5
7.8
D
2.80
3.00
110.2
118.1
E
2.60
3.00
102.3
118.1
E1
1.50
1.75
59.0
68.8
L
0.35
0.55
13.7
21.6
e
0.95
37.4
e1
1.9
74.8
7/8
74H1G66
Information furnished is believed to be accurate and reliable. However, STMicroelectronic s assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
.
8/8