74VHCT14A HEX SCHMITT INVERTER PRELIMINARY DATA ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA = 25 oC TYPICAL HYSTERESIS: 0.7V at VCC = 4.5V POWER DOWN PROTECTION ON INPUTS & OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 4.5V to 5.5V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 14 IMPROVED LATCH-UP IMMUNITY LOW NOISE: VOLP = 0.8V (Max.) DESCRIPTION The 74VHCT14A is an advanced high-speed CMOS HEX SCHMITT INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enable high noise immunity and stable output. M (Micro Package) T (TSSOP Package) ORDER CODES : 74VHCT14AM 74VHCT14AT Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. Pin configuration and function are the same as those of the VHC04 but the VHC14 has hysteresis. This together with its schmitt trigger function allows it to be used on line receivers with slow rise/fall input signals. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS August 1999 1/7 74VHCT14A INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL 1, 3, 5, 9, 11, 13 1A to 6A Data Inputs NAME AND FUNCT ION 2, 4, 6, 8, 10, 12 1Y to 6Y Data Outputs 7 GND Ground (0V) 14 VCC Positive Supply Voltage TRUTH TABLE A Y L H H L ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Supply Voltage -0.5 to +7.0 VI DC Input Voltage -0.5 to +7.0 V VO DC Output Voltage (see note 1) -0.5 to +7.0 V VO DC Output Voltage (see note 2) -0.5 to VCC + 0.5 V IIK DC Input Diode Current - 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 25 mA ± 50 mA VCC ICC or IGND DC VCC or Ground Current Tstg TL Storage Temperature Lead Temperature (10 sec) -65 to +150 o 300 o C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. 1) VCC =0V 2) High or Low State RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage Unit V VI Input Voltage 0 to 5.5 V VO Output Voltage (see note 1) 0 to 5.5 V VO Output Voltage (see note 2) Top Operating Temperature 1) VCC =0V 2) High or Low State 2/7 Valu e 4.5 to 5.5 0 to VCC -40 to +85 V o C 74VHCT14A DC SPECIFICATIONS Symb ol Vt+ VtVh VOH VOL II Parameter T est Cond ition s Value T A = 25 o C Un it -40 to 85 o C V CC (V) Min. High Level Threshold Voltage 4.5 2.0 2.0 5.5 2.0 2.0 Low Level Threshold Voltage 4.5 0.6 0.6 5.5 0.6 0.6 Hysteresis Voltage 4.5 0.4 1.4 0.4 1.4 5.5 0.4 1.5 0.4 1.5 High Level Output Voltage Low Level Output Voltage Input Leakage Current Typ . Max. Min . Max. V V V 4.5 I O =-50 µA 4.4 4.5 IO=-8 mA 3.94 4.5 I O=50 µA 0.1 0.1 4.5 IO=8 mA 0.36 0.44 0 to 5.5 VI = 5.5V or GND ±0.1 ±1.0 µA 4.5 4.4 V 3.8 0.0 V ICC Quiescent Supply Current 5.5 VI = VCC or GND 2 20 µA ∆ICC Additional Worst Case Supply Current 5.5 One Input at 3.4V, other input at VCC or GND 1.35 1.5 mA IOPD Output Leakage Current 0 VOUT = 5.5V 0.5 5.0 µA AC ELECTRICAL CHARACTERISTICS (Input t r = tf =3 ns) Symb ol tPLH tPHL Parameter Propagation Delay Time Test Co ndition V CC (*) CL (pF ) (V) 5.0 5.0 Value T A = 25 o C Min. 15 50 Typ . 4.0 5.5 Max. 7.0 8.0 Un it -40 to 85 o C Min . 1.0 1.0 Max. 8.0 9.0 ns (*) Voltage range is 5V ± 0.5V CAPACITIVE CHARACTERISTICS Symb ol Parameter T est Cond ition s Value o Min. -40 to 85 C Typ . Max. 10 C IN Input Capacitance 4 CPD Power Dissipation Capacitance (note 1) 12 Un it o T A = 25 C Min . Max. 10 pF pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/6 (per Gate) 3/7 74VHCT14A DYNAMIC SWITCHING CHARACTERISTICS Symb ol Parameter T est Cond ition s Dynamic Low Voltage Quiet Output (note 1, 2) 5.0 VIHD Dynamic High Voltage Input (note 1, 3) 5.0 VILD Dynamic Low Voltage Input (note 1, 3) 5.0 VOLP VOLV Value T A = 25 o C V CC (V) Min. -0.8 C L = 50 pF Un it -40 to 85 o C Typ . Max. 0.3 0.8 Min . Max. -0.3 2.0 V 0.6 1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n -1) outputs switching and one output at GND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to3.0V. Inputs under test switching: 3.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz. TEST CIRCUIT CL = 15/50 pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle) 4/7 74VHCT14A SO-14 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.2 a2 MAX. 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45 (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 e3 0.050 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 0.68 0.026 8 (max.) P013G 5/7 74VHCT14A TSSOP14 MECHANICAL DATA mm DIM. MIN. inch TYP. A MAX. MIN. MAX. 1.1 0.433 A1 0.05 0.10 0.15 0.002 0.004 0.006 A2 0.85 0.9 0.95 0.335 0.354 0.374 b 0.19 0.30 0.0075 0.0118 c 0.09 0.20 0.0035 0.0079 D 4.9 5 5.1 0.193 0.197 0.201 E 6.25 6.4 6.5 0.246 0.252 0.256 E1 4.3 4.4 4.48 0.169 0.173 0.176 e 0.65 BSC 0.0256 BSC K 0o 4o 8o 0o 4o 8o L 0.50 0.60 0.70 0.020 0.024 0.028 A A2 A1 b e K c E1 PIN 1 IDENTIFICATION 1 L E D 6/7 TYP. 74VHCT14A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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