STMICROELECTRONICS AM1011-400

AM1011-400
RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS
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..
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REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
15:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P OUT = 400 W MIN. WITH 8.0 dB GAIN
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
AM1011-400
BRANDING
1011-400
PIN CONNECTION
DESCRIPTION
The AM1011-400 device is a high power Class
C transistor specifically designed for TCAS and
Mode-S pulsed output and driver applications.
This device is designed for operation under moderate pulse width and duty cycle pulse conditions
and is capable of withstanding 15:1 output VSWR
at rated RF conditions. Low RF thermal resistance
and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The AM1011-400 is supplied in the BIGPAC Hermetic Metal/Ceramic package Input/Output matching structures.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
PDISS
IC
VCC
TJ
T STG
Parameter
Value
Unit
880
W
Device Current*
24
A
Collector-Supply Voltage*
55
V
Junction Temperature (Pulsed RF Operation)
250
°C
− 65 to +200
°C
0.17
°C/W
Power Dissipation*
(TC ≤ 100°C)
Storage Temperature
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
September 1992
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AM1011-400
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Symbol
Valu e
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 50mA
IE = 0mA
65
—
—
V
BVEBO
IE = 15mA
IC = 0mA
3.5
—
—
V
BVCER
IC = 50mA
RBE = 10Ω
65
—
—
V
ICES
VBE = 50V
VCE = 0V
—
—
30
mA
hFE
VCE = 5V
IC = 5A
10
—
—
—
DYNAMIC
Symbol
Min.
Typ.
Max.
Unit
POUT
ηc
f = 1090MHz
PIN = 63W
VCC = 50V
400
450
—
W
f = 1090MHz
PIN = 63W
VCC = 50V
45
50
—
%
GP
f = 1090MHz
PIN = 63W
VCC = 50V
8.0
8.5
—
dB
Note:
Pul se Widt h
Duty Cycle
2/6
Value
Test Conditions
=
=
32 µ Sec
2%
AM1011-400
TYPICAL PERFORMANCE
TYPICAL RELATIVE
OUTPUT & COLLECTYPICAL
RELATIVE
OUTPUT
POWER
& COLLECTOR
TOR EFFICIENCY
vs COLLECTOREFFICIENCY
VOLTAGE
vs COLLECTOR VOLTAGE
TYPICAL NARROWBAND
NARROWBAND
TYPICAL
POWER
AMPLIFIER
POWER AMPLIFIER
500
100
80
90
450
P
POUT
400
70
POUT
Freq = 1090 MHz
VCC = 50 V
PW = 32 µsec
DC = 2%
TA = 25°C
O
W
E
350
R
O
300
U
T
P
60
250
ηC
U
T
80
200
P
C
O
O
W
L
E
L
R
E
C
O
T
U
O
T
R
P
80
70
C
O
70
L
L
60
60
50
W
T
150
E
T
F
W
.
A
T
T
S
O
R
U
40
50
F
A
C
T
ηC
50
E
%
40
30
T
S
100
Freq = 1090 MHz
PIN = 60 W
PW = 32 µsec
DC = 2%
TA = 25°C
20
E
F
F
.
%
40
10
50
0
30
10
20
30
40
50
60
70
80
90
0
30
30
35
40
45
50
COLLECTOR VOLTAGE (VOLTS)
POWER INPUT (WATTS)
MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE
DC
= 4%
DC = 10%
DC
ΘJC
°C/W
=
2%
TC < 45°C
PW ≤ 100 µsec; VCC = 50V
PW > 100 µsec; VCC < 50V
PULSE WIDTH (µsec)
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AM1011-400
IMPEDANCE DATA
TYPICAL COLLECTOR
LOAD IMPEDANCE
ZCL
PIN = 63 W
VCC = +50 V
ZO* = 50 Ω
L = 1025 MHz
ZIN (Ω)
2.4 + j 3.2
ZCL (Ω)
1.4 − j 2.2
M = 1090 MHz
3.8 + j 2.5
1.6 − j 1.6
H = 1150 MHz
2.3 + j 1.3
1.2 − j 1.1
FREQ.
TYPICAL INPUT
IMPEDANCE
ZIN
PIN = 63 W
VCC = +50 V
ZO* = 50 Ω
*Normalized Impedance
4/6
AM1011-400
TEST CIRCUIT
.185
Ref.: Dwg. No.: 101-002568
PACKAGE MECHANICAL DATA
5/6
AM1011-400
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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