AM81214-030 .. .. .. .. RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 26 W MIN. WITH 7.2 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM81214-030 DESCRIPTION BRANDING 81214-30 PIN CONNECTION The AM81214-030 device is a high power transistor specifically designed for L-Band Radar pulsed driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding ∞:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM81214-030 is supplied in the IMPAC Hermetic M etal/Ceramic package with i nternal Input/Output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 63 W 2.75 A Collector-Supply Voltage* 32 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 2.4 °C/W Power Dissipation* (TC ≤ 100°C) Device Current* Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation August 1992 1/6 AM81214-030 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO IC = 10mA IE = 0mA 55 — — V BVEBO IE = 1mA IC = 0mA 3.5 — — V BVCER IC = 20mA RBE = 10Ω 55 — — V ICES VBE = 0V VCE = 28V — — 5 mA hFE VCE = 5V IC = 1A 15 — 150 — Min. Value Typ. Max. Unit DYNAMIC Symbol Test Conditions PIN ηc f = 1215 — 1400MHz PIN = 5W Peak VCC = 28V 26 36 — W f = 1215 — 1400MHz PIN = 5W Peak VCC = 28V 45 49 — % GP f = 1215 — 1400MHz PIN = 5W Peak VCC = 28V 7.2 8.5 — dB Note: Pulse W idth Duty Cycle 2/6 = = 1000 µ S 10% AM81214-030 TYPICAL PERFORMANCE RELATIVE POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE TYPICAL BROADBAND POWER AMPLIFIER MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH 3/6 AM81214-030 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN PIN = 5.0 W VCC = 28 V ZO = 50 Ohms FREQ. ZIN (Ω) ZCL (Ω) L = 1.215 GHz 4.5 + j 12.5 11.0 − j 10.0 M = 1.300 GHz 8.5 + j 13.5 10.5 − j 6.5 H = 1.400 GHz 9.5 + j 10.0 8.0 − j 5.0 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL PIN = 5.0 W VCC = 28 V ZO = 50 Ohms 4/6 AM81214-030 TEST CIRCUIT PACKAGE MECHANICAL DATA .318/ .306 5/6 AM81214-030 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6