AM0912-080 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .. .. .. .. REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 90 W MIN. WITH 13 dB GAIN BANDWIDTH 225 MHz .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM0912-080 BRANDING 0912-80 PIN CONNECTION DESCRIPTION The AM0912-080 Avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship based DME/TACAN. This device is also designed for specialized applications including JTIDS where reduced power provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM0 912-08 0 is ho used in the unique AMPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ TSTG Parameter Value Unit 220 W Device Current* 7.0 A Collector-Supply Voltage* 50 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 0.80 °C/W Power Dissipation* (TC ≤100˚C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation September 1992 1/3 AM0912-080 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 40mA IE = 0mA 65 — — V BVEBO IE = 10mA IC = 0mA 3.0 — — V BVCER IC = 40mA RBE = 10Ω 65 — — V ICBO VCB = 50V — — 12 mA hFE VCE = 5V 20 — 120 — IC = 2A DYNAMIC Symbol Value Test Conditions Min. Typ. Max. POUT ηc f = 960 — 1215MHz PIN = 13W VCC = 50V 90 100 — W f = 960 — 1215MHz PIN = 13W VCC = 50V 38 44 — % GP f = 960 — 1215MHz PIN = 13W VCC = 50V 8.4 — — dB Note: Pulse Width Duty Cycle = = 10 µ Sec 10% TEST CIRCUIT Ref. Dwg. No. J-313120 .120 All dimensions are in inches. Substrate material: .025 thick AI2O3 C1,C2 : 0.3 - 3.5 pF Johanson Capacitors, or Equiv. C3 : 100 pF Chip Capacitor C4,C6 : 1500 pF RF Feedthru 2/3 Unit C5 : 100 MF, Electrolytic 50V L1,L2 : No. 32 Wire, 4 Turn .062 I.D. RBE : 0 - 1.0 Ohm AM0912-080 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 3/3