AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . .. .. POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN 10:1 LOAD VSWR CAPABILITY @ 10µS., 1% DUTY SIXPAC HERMETIC METAL/CERAMIC PACKAGE EMITTER SITE BALLASTED OVERLAY GEOMETRY REFRACTORY/GOLD METALLIZATION LOW THERMAL RESISTANCE INTERNAL INPUT/OUTPUT MATCHING CHARACTERIZED UNDER 32µS.,2% DUTY CYCLE PULSE CONDITIONS .400 x .600 2L FL (M198) hermetically sealed ORDER CODE AM1011-500 BRANDING 1011-500 PIN CONNECTION DESCRIPTION The AM1011-500 device is a high power Class C transistor specifically designed for L-Band Avionic applications involving high pulse burst duty cycles. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1011-500 is supplied in the SIXPAC Hermetic metal/ceramic package with internal input/output matching structures. 1. Collector 3. Emitter 2. Base 4. Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 1,360 W Device Current* 27 A Collector-Supply Voltage* 55 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 0.11 °C/W Power Dissipation* (TC ≤ 100°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation AM1011-500 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbo l Value T est Con ditio ns Min. Typ . Max. Un it BVCBO IC = 50 mA IE = 0 mA 70 — — V BVEBO IE = 30 mA IC = 0 mA 3.0 — — V BVCES IC = 50 mA VBE = 0 V 70 — — V ICES VBE = 0 V VCE = 50 V — — 40 mA hFE VCE = 5 V IC = 1.0 A 10 — 200 — DYNAMIC Symbo l Value Test Con dition s Min . Typ . Max. Unit POUT f = 1090 MHz PIN = 70 W VCC = 50 V 500 — — W hc f = 1090 MHz POUT = 500 W VCC = 50 V 40 — — % GP f = 1090 MHz POUT = 500 W VCC = 50 V 8.5 — — dB Load VSWR = 10:1, 10µS, 1% Duty POUT = 500 W Peak Mismatch F = 1090MHz VSWR = 5:1, 32µS, 2% Duty VCC = 50 V Note: Pul se Width = 32µ Sec, D uty Cycle = 2% No Degradation in Output Power TYPICAL PERFORMANCE POWER OUTPUT & COLLECTOR EFFICIENCY vs POWER INPUT POWER OUTPUT & COLLECTOR EFFICIENCY vs POWER INPUT POUT POUT ηC ηC * Pulse Burst conditions: 128 µSec train, 0.5 µSec on, 0.5 µSec off; with a period of 6.4 msec. AM1011-500 IMPEDANCE DATA FREQ. ZIN(Ω) ZCL(Ω) 1030 MHz 4.35 + j 6.97 1.38 − j 4.08 1090 MHz 4.38 + j 2.75 .874 − j 3.55 1120 MHz 4.69 + j 2.95 1.3 − j 4.97 PIN = 70W VCC = 50V TEST CIRCUIT AM1011-500 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0198 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.