STMICROELECTRONICS AM80814-005

AM80814-005
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
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REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P OUT = 5.0 W MIN. WITH 8.5 dB GAIN
.310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE
AM80814-005
DESCRIPTION
The AM80814-005 device is a high power Class
C transistor specifically designed for L-Band radar
pulsed driver applications.
BRANDING
80814-5
PIN CONNECTION
This device is capable of operation over a wide
range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output
VSWR at rated RF conditions. Low thermal resistance and computerized automatic wire bonding
techniques ensure high reliability and product consistency.
The AM80814-005 is supplied in the IMPAC Hermeti c M etal/ Ceramic package with internal
Input/Output matching structures.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
PDISS
IC
VCC
TJ
T STG
Parameter
Value
Unit
23
W
Device Current*
1.0
A
Collector-Supply Voltage*
28
V
Junction Temperature (Pulsed RF Operation)
250
°C
- 65 to +200
°C
6.5
°C/W
Power Dissipation*
(TC ≤ 100°C)
Storage Temperature
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
August 1992
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AM80814-005
ELECTRICAL SPECIFICATIONS (T case = 25° C)
STATIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 1mA
IE = 0mA
48
—
—
V
BVEBO
IE = 1mA
IC = 0mA
3.5
—
—
V
BVCER
IC = 5mA
RBE = 10Ω
48
—
—
V
ICES
VBE = 0V
VCE = 28V
—
—
500
mA
hFE
VCE = 5V
IC = 250mA
30
—
300
—
Test Conditions
Min.
Value
Typ.
Max.
Unit
DYNAMIC
Symbol
POUT
ηc
f = 850 — 1400MHz
PIN = 0.7W
VCC = 28V
5.0
5.7
—
W
f = 850 — 1400MHz
PIN = 0.7W
VCC = 28V
35
40
—
%
GP
f = 850 — 1400MHz
PIN = 0.7W
VCC = 28V
8.5
9.0
—
dB
Note:
Pulse W idth
Duty Cycle
=
=
120 µ S
4%
TYPICAL PERFORMANCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs FREQUENCY
8
(Watts)
90
85
PIN
7
P
O
W
E
R
O
U
T
P
U
T
80
75
0.7
6
70
0.6
65
5
0.5
4
PW = 120 µS
DC = 4%
VCC = 28 V
PIN = 0.5, 0.6W
60
55
50
45
PIN = 07W
3
40
C
O
L
L
E
C
T
O
R
E
F
F
I
C
I
E
N
C
Y
35
%
2
30
800
950
1100
FREQUENCY (MHz)
2/5
1250
1400
AM80814-005
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
ZIN
L
ZIN
TYPICAL COLLECTOR
LOAD IMPEDANCE
ZCL
L
H
ZCL
PIN = 0.7 W
VCC = 28 V
Normalized to 50 ohms
H
FREQ.
ZIN (Ω)
ZCL (Ω)
L = 0.85 GHz
0.22 + j 0.29
0.13 + j 0.15
• = 1.0 GHz
0.21 + j 0.25
0.18 + j 0.18
• = 1.1 GHz
0.19 + j 0.22
0.23 + j 0.17
• = 1.2 GHz
0.18 + j 0.17
0.32 + j 0.16
• = 1.3 GHz
0.17 + j 0.15
0.29 + j 0.02
H = 1.4 GHz
0.16 + j 0.14
0.22 − j 0.06
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AM80814-005
TEST CIRCUIT
All dimensions are in inches.
Substrate material: .025 thick AI2 O3
C1
C2
C3
C4
4/5
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AM80814-005
PACKAGE MECHANICAL DATA
.318/
.306
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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