AM80814-005 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .. .. .. .. REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 5.0 W MIN. WITH 8.5 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM80814-005 DESCRIPTION The AM80814-005 device is a high power Class C transistor specifically designed for L-Band radar pulsed driver applications. BRANDING 80814-5 PIN CONNECTION This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM80814-005 is supplied in the IMPAC Hermeti c M etal/ Ceramic package with internal Input/Output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 23 W Device Current* 1.0 A Collector-Supply Voltage* 28 V Junction Temperature (Pulsed RF Operation) 250 °C - 65 to +200 °C 6.5 °C/W Power Dissipation* (TC ≤ 100°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation August 1992 1/5 AM80814-005 ELECTRICAL SPECIFICATIONS (T case = 25° C) STATIC Value Symbol Test Conditions Min. Typ. Max. Unit BVCBO IC = 1mA IE = 0mA 48 — — V BVEBO IE = 1mA IC = 0mA 3.5 — — V BVCER IC = 5mA RBE = 10Ω 48 — — V ICES VBE = 0V VCE = 28V — — 500 mA hFE VCE = 5V IC = 250mA 30 — 300 — Test Conditions Min. Value Typ. Max. Unit DYNAMIC Symbol POUT ηc f = 850 — 1400MHz PIN = 0.7W VCC = 28V 5.0 5.7 — W f = 850 — 1400MHz PIN = 0.7W VCC = 28V 35 40 — % GP f = 850 — 1400MHz PIN = 0.7W VCC = 28V 8.5 9.0 — dB Note: Pulse W idth Duty Cycle = = 120 µ S 4% TYPICAL PERFORMANCE POWER OUTPUT & COLLECTOR EFFICIENCY vs FREQUENCY 8 (Watts) 90 85 PIN 7 P O W E R O U T P U T 80 75 0.7 6 70 0.6 65 5 0.5 4 PW = 120 µS DC = 4% VCC = 28 V PIN = 0.5, 0.6W 60 55 50 45 PIN = 07W 3 40 C O L L E C T O R E F F I C I E N C Y 35 % 2 30 800 950 1100 FREQUENCY (MHz) 2/5 1250 1400 AM80814-005 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN L ZIN TYPICAL COLLECTOR LOAD IMPEDANCE ZCL L H ZCL PIN = 0.7 W VCC = 28 V Normalized to 50 ohms H FREQ. ZIN (Ω) ZCL (Ω) L = 0.85 GHz 0.22 + j 0.29 0.13 + j 0.15 • = 1.0 GHz 0.21 + j 0.25 0.18 + j 0.18 • = 1.1 GHz 0.19 + j 0.22 0.23 + j 0.17 • = 1.2 GHz 0.18 + j 0.17 0.32 + j 0.16 • = 1.3 GHz 0.17 + j 0.15 0.29 + j 0.02 H = 1.4 GHz 0.16 + j 0.14 0.22 − j 0.06 3/5 AM80814-005 TEST CIRCUIT All dimensions are in inches. Substrate material: .025 thick AI2 O3 C1 C2 C3 C4 4/5 : : : : 100 µF Electrolytic Capacitor, 63V .1 µF Ceramic Capacitor Feedthrough Bypass SC! 712-022 .6 — 4.5 pF, 2 pls, Johanson Gigatrim Capacitor C5 C6 L1 L2 : : : : .6 — 4.5 pF, 2 pls, Johanson Gigatrim Capacitor 100 pF Chip Capacitor No. 26 Wire, 4 Turn No. 26 Wire, 4 Turn AM80814-005 PACKAGE MECHANICAL DATA .318/ .306 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5