AM82731-050 .. . .. .. . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN. WITH 6 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM82731-050 BRANDING 82731-50 DESCRIPTION The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. PIN CONNECTION The device is capable of operation over a wde range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM82731-050 is supplied in the AMPAC Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 167 W Device Current* 8 A Collector-Supply Voltage* 46 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 1.2 °C/W Power Dissipation* (TC ≤ 50°C) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation August 1992 1/4 AM82731-050 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO IC = 25mA IE = 0mA 55 — — V BVEBO IE = 5mA IC = 0mA 3.5 — — V BVCER IC = 25mA RBE = 10Ω 55 — — V ICES VCE = 40V — — 20 mA hFE VCE = 5V 30 — — — Min. Value Typ. Max. Unit IC = 3A DYNAMIC Symbol Test Conditions POUT ηc f = 2700 — 3100MHz PIN = 12.5W VCC = 40V 50 56 — W f = 2700 — 3100MHz PIN = 12.5W VCC = 40V 30 35 — % GP f = 2700 — 3100MHz PIN = 12.5W VCC = 40V 6.0 6.5 — dB Note: Pul se Widt h Duty Cycle = = 100 µ S 10% TYPICAL PERFORMANCE COLLECTOR EFFICIENCY vs FREQUENCY GAIN vs FREQUENCY COLLECTOR EFFICIENCY vs FREQUENCY GAIN vs FREQUENCY 8.00 50 C 36.4 O 39.5 6.93 7.19 6.43 38.0 L L Upper Window E C 7.00 40 Upper Window Mean T O Lower Window Mean G R A Lower Window I E 30 N 6.00 F F d I B C I E 5.00 20 N 50 Watts Output @ 100 µS 10% Pulse VCC = 40 Volts 50 Watts Ouput @ 100 µS 10% Pulse VCC = 40 Volts C Y % 10 2.7 4.00 2.9 FREQUENCY 2/4 3.1 2.7 2.9 FREQUENCY 3.1 AM82731-050 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN L ZIN H H TYPICAL COLLECTOR LOAD IMPEDANCE ZCL ZCL L L = 2.7 GHz ZIN (Ω) 7.4 + j 5.4 ZCL (Ω) 7.1 − j 8.6 M = 2.9 GHz 7.8 + j 3.0 5.4 − j 7.4 H = 3.1 GHz 8.0 + j 2.0 4.6 − j 2.6 FREQ. PIN = 12.5 W VCC = 40 V Z0 = 50 ohms TEST CIRCUIT 3/4 AM82731-050 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4