BUL312FP ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS HORIZONTAL DEFLECTION FOR TV ■ SMPS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 3 1 2 ■ DESCRIPTION The BUL312FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V BE = 0) 1150 V V CEO Collector-Emitter Voltage (I B = 0) 500 V V EBO IC Emitter-Base Voltage (I C = 0) Collector Current 9 5 V A 10 A A I CM Parameter Collector Peak Current (t p <5 ms) Base Current 3 I BM Base Peak Current (t p <5 ms) 4 A P tot Visol Total Dissipation at Tc = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature 36 1500 W V IB T stg Tj March 2004 Max. Operating Junction Temperature -65 to 150 o C 150 o C 1/6 BUL312FP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 3.5 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 1150 V V CE = 1150 V I CEO Collector Cut-off Current (I B = 0) V CE = 500 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA Min. Typ. Tj = 125 o C L= 25 mH Max. Unit 1 2 mA mA 250 µA 500 V 10 V Emitter-Base Voltage (I C = 0) I E = 10 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.6 A 0.5 0.7 1.1 V V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.6 A 1 1.1 1.2 V V V DC Current Gain I C = 10 mA IC = 3 A ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE(off) = -5 V V CL = 250 V (see fig. 1) ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE(off) = -5V V CL = 250 V T j = 125 o C V EBO h FE ∗ V CE = 5 V V CE = 2.5 V I B1 = 0.4 A R BB = 0 Ω L = 200 µH I B1 = 0.4 A R BB = 0 Ω L = 200 µH (see fig. 1) ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Areas 2/6 Derating Curve 8 8 13.5 1.2 80 1.8 150 1.9 160 µs ns µs ns BUL312FP DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 BUL312FP Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 BUL312FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 L4 5/6 BUL312FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2004 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6