BUL312FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL312FH Marking BUL312FH Shipment Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 °C LARGE R.B.S.O.A. FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING TO-220FH APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOR TV SWITCH MODE POWER SUPPLIES ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide R.B.S.O.A. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V VCES Collector-Emitter Voltage (VBE = 0) 1150 VCEO Collector-Emitter Voltage (IB = 0) 500 V VEBO Emitter-Base Voltage (IC = 0) 9 V Collector Current 5 A Collector Peak Current (tp < 5 ms) 10 A IC ICM IB Base Current 3 A IBM Base Peak Current (tp < 5 ms) 4 A Ptot Total Dissipation at Tc = 25 °C 36 W Visol Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink 2500 V Tstg Storage Temperature –65 to 150 °C 150 °C Tj August 2002 Max. Operating Junction Temperature 1/6 BUL312FH THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.47 62.5 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified) Symbol ICES Parameter Test Conditions Min. Typ. Max. Unit 1 2 mA mA 250 µA Collector Cut-off Current (VBE = 0) VCE = 1150 V VCE = 1150 V ICEO Collector Cut-off Current (IB = 0) VCE = 500 V VEBO Emitter-Base Voltage (IC = 0) IE = 10 mA 9 V VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0) IC = 100 mA 500 V VCE(sat)* Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A IB = 200 mA IB = 400 mA IB = 600 mA 0.5 0.7 1.1 V V V VBE(sat)* Base-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A IB = 200 mA IB = 400 mA IB = 600 mA 1 1.1 1.2 V V V DC Current Gain IC = 10 mA IC = 3 A VCE = 5 V VCE = 2.5 V hFE* ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A IB1 = 400 mA L = 200 µH (See Figure 1) Vclamp = 250 V VBE(off) = -5 V RBB = 0 ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A IB1 = 400 mA L = 200 µH Tj = 125 °C Vclamp = 250 V VBE(off) = -5 V RBB = 0 (See Figure 1) * Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %. 2/6 Tj = 125 °C 8 8 16 1.2 80 1.8 150 1.9 160 µs ns µs ns BUL312FH Safe Operating Area Derating Curve Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain DC Current Gain 3/6 BUL312FH Inductive Load Storage Time Reverse Biased Safe Operating Area Figure 1: Inductive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor 3) Fast Recovery Rectifier 4/6 Inductive Load Fall Time BUL312FH TO-220FH (Fully plastic High voltage) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.3 1.8 0.051 0.070 F2 1.3 1.8 0.051 0.070 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 16 L3 28.6 30.6 1.126 L4 9.8 10.6 0.385 L5 0.409 0.630 3.4 1.204 0.417 0.134 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 L8 14.5 15 0.570 L9 2.4 0.590 0.094 P011W 5/6 BUL312FH Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 6/6