BULB128D-1 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-1 BULB128D Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS 3 12 I2PAK (TO-262) ■ INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0, IB = 2 A, t p < 10µs, T j < 150 o C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature September 2003 Value 700 400 V (BR)EBO Unit V V V 4 8 2 4 70 -65 to 150 150 A A A A W o C o C 1/7 BULB128D-1 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.78 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0 V) V CE = 700 V V CE = 700 V I CEO Collector Cut-off Current (I B = 0) V CE = 400 V Emitter-Base Breakdown Voltage (I C = 0) I E = 10 mA V (BR)EBO V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Collector-Emitter Saturation Voltage IC IC IC IC IB IB IB IB = = = = I C = 0.5 A IC = 1 A I C = 2.5 A I B = 0.1 A I B = 0.2 A I B = 0.5 A DC Current Gain I C = 10 mA IC = 2 A V CE = 5 V V CE = 5 V Vf Forward Voltage Drop If = 2 A ts tf INDUCTIVE LOAD Storage Time Fall Time V CC = 200 V I B1 = 0.4 A R BB = 0 Ω (see fig.1) IC = 2 A V BE(off) = -5 V L = 200 µH ts tf RESISTIVE LOAD Storage Time Fall Time V CC = 250 V I B1 = 0.4 A T p = 300 µs IC = 2 A I B2 = -0.4 A (see fig.2) Max. Unit 100 500 µA µA 250 µA 18 V 400 0.1 A 0.2 A 0.5 A 1A Base-Emitter Saturation Voltage ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 9 L = 25 mH 0.5 A 1A 2.5 A 4A Typ. T C = 125 o C I C = 100 mA = = = = Min. V 0.7 1 1.5 V V V V 1.1 1.2 1.3 V V V 0.5 10 12 32 2.5 µs µs 0.6 0.1 2 2.9 0.2 V µs µs BULB128D-1 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BULB128D-1 Inductive Fall Time Inductive Storage Time Resistive Load Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BULB128D-1 Figure 1: Inductive Load Switching Test Circuits. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuits. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BULB128D-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 6/7 BULB128D-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7