STMICROELECTRONICS BUL310FP_03

BUL310FP
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125oC
LARGE RBSOA
FULLY MOLDED INSULATED PACKAGE
2000 V DC INSULATION (U.L. COMPLIANT)
APPLICATIONS
HORIZONTAL DEFLECTION FOR COLOUR
TV
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
3
1
2
TO-220FP
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INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
The BUL310FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V CES
V CEO
V EBO
IC
I CM
IB
I BM
P tot
T stg
Tj
April 2003
Parameter
Collector-Emitter Voltage (V BE = 0)
Collector-Emitter Voltage (I B = 0)
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (t p <5 ms)
Base Current
Base Peak Current (t p <5 ms)
Total Dissipation at Tc = 25 o C
Storage Temperature
Max. Operating Junction Temperature
Value
1000
500
9
5
10
3
4
36
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
1/6
BUL310FP
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
3.5
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1000 V
V CE = 1000 V
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 500 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 100 mA
Min.
Typ.
T j = 125 o C
L= 25 mH
Max.
Unit
100
500
µA
µA
250
µA
500
V
9
V
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IC = 3 A
I B = 0.2 A
I B = 0.4 A
I B = 0.6 A
0.5
0.7
1.1
V
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IC = 3 A
I B = 0.2 A
I B = 0.4 A
I B = 0.6 A
1
1.1
1.2
V
V
V
DC Current Gain
I C = 10 mA
IC = 3 A
V EBO
h FE ∗
VCE = 5 V
V CE = 2.5 V
10
14
1.9
160
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
V BE(off) = -5 V
V CL = 250 V
(see figure 1)
I B1 = 0.4 A
R BB = 0 Ω
L = 200 µH
1.2
80
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
V BE(off) = -5V
V CL = 250 V
T j = 125 o C
I B1 = 0.4 A
R BB = 0 Ω
L = 200 µH
(see figure 1)
1.8
150
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas
2/6
10
6
Derating Curve
µs
ns
µs
ns
BUL310FP
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Inductive Load Fall Time
Inductive Load Storage Time
3/6
BUL310FP
Reverse Biased SOA
Figure 1: Inductive Load Switching Test Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/6
BUL310FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
A
4.4
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
¯
F
F1
L7
1 2 3
L2
L4
5/6
BUL310FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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