L9339 QUAD LOW SIDE DRIVER ■ WIDE OPERATING SUPPLY VOLTAGE RANGE FROM 4.5V UP TO 32V FOR TRANSIENT 45V VERY LOW STANDBY QUIESCENT CURRENT < 2µA INPUT TO OUTPUT SIGNAL TRANSFER FUNCTION PROGRAMMABLE HIGH SIGNAL RANGE FROM -0.3V UP TO 32V FOR ALL INPUTS TTL AND CMOS COMPATIBLE INPUTS DEFINED OUTPUT OFF STATE FOR OPEN INPUTS FOUR OPEN DRAIN DMOS OUTPUTS, WITH RDSon = 1.5Ω FOR VS > 6V AT 25°C OUTPUT CURRENT LIMITATION ■ CONTROLLED OUTPUT SLOPE FOR LOW EMI ■ OVERTEMPERATURE PROTECTION FOR EACH CHANNEL ■ INTEGRATED OUTPUT CLAMPING FOR FAST INDUCTIVE RECIRCULATION VFB > 45V ■ ■ ■ ■ ■ ■ ■ MULTIPOWER BCD TECHNOLOGY SO20 & SO20(12+4+4) BARE DIE ORDERING NUMBER: L9339MD (SO20 12+4+4) L9339 (SO20) L9339DIE1 (BARE DIE) ■ STATUS MONITORING FOR - OVERTEMPERATURE - DISCONNECTED GROUND OR SUPPLY VOLTAGE DESCRIPTION The L9339 is a monolithic integrated quad low side driver. It is intended to drive lines, lamps or relais in automotive or industrial applications. BLOCK DIAGRAM IN 4 C H AN N EL 4 O UT 4 O UT 1 IN 1 = & T HE RM A L S H U TDO WN C H AN N EL 1 4 PR G D IA G DI AG N O S T IC L O G IC EN V in t VS R EF ER EN C E V log ic GND December 1999 1/9 L9339 PIN CONNECTION (Top view) NC 1 20 NC IN1 1 20 PRG VS 2 19 DIAG IN2 2 19 OUT1 NC 3 18 NC DIAG 3 18 OUT2 IN3 4 17 IN2 GND 4 17 GND IN4 5 16 IN1 GND 5 16 GND EN 6 15 PRG GND 6 15 GND OUT4 7 14 OUT1 GND 7 14 GND OUT3 8 13 OUT2 VS 8 13 OUT3 GND 9 12 NC IN3 9 12 OUT4 10 11 NC IN4 10 11 EN NC SO20 SO20 (12+4+4) SO20 SO20 (12+4+4) PIN FUNCTION Package Pin Name SO 20 SO 20 (SO 12+4+4) Supply Voltage 2 8 GND Ground 9 4, 5, 6, 7, 14, 15, 16, 17 EN Enable 6 11 PRG Programing 15 20 DIAG Diagnostic 19 3 IN 1 Input 1 16 1 IN 2 Input 2 17 2 IN 3 Input 3 4 9 IN 4 Input 4 5 10 OUT 1 OUTPUT 1 14 19 OUT 2 OUTPUT 2 13 18 OUT 3 OUTPUT 3 8 13 OUT4 OUTPUT4 7 12 1,3,10,11,12,18,20 - VS NC 2/9 Description Not Connected L9339 ABSOLUTE MAXIMUM RATINGS (no damage or latch) Symbol VS dV S/dt VIN, VPRG IIN Parameter Supply voltage Supply voltage Unit -0.3 ... 32 -0.3 ... 45 V V -10 ... +10 V/µs -0.3 ... 32 -0.3 ... 45 V V -10 mA -24 ... 32 -24 ... 45 V V -0.3 ... 45 1) V -1 internal limited A -0.3 ... 32 -0.3 ... 45 V V DC Pulse (T < 400ms) Supply voltage transient Input, Programming Input, Programming DC voltage Pulse (T < 400ms) Negative input current VEN Enable voltage Enable voltage VOUT Output voltage IOUT Negative output current Positive output current VDIAG Value DC Pulse (T <400ms) Diagnostic output voltage Diagnostic output voltage DC Pulse (T < 400ms) Notes: 1. In flyback phase the output voltage can reach 60V. ESD according to MIL 883C; tested at 2KV; corresponds to maximum energy dissipation 0.2mJ. THERMAL DATA Symbol Parameter Min. Typ. Max. Unit. TJSDon Temperature shutdown switch-on-threshold 160 200 °C TJSDoff Temperature shutdown switch-off-threshold 140 180 °C SO 12+4+4 R th j-pin Thermal resistance junction to pins 15 °C/W R th j-amb Thermal resistance junction to ambient 2) 50 °C/W Thermal resistance junction to ambient 3) 97 °C/W SO 20 R th j-amb 2. With 6cm2 on board heat sink area. 3. Mounted on SMPCB2 board 3/9 L9339 ELECTRICAL CHARACTERISTCS The electrical characteristics are valid within the below defined Operating Conditions, unless otherwise specified. The function is guaranteed by design until TJSDon switch-on-threshold. VS Supply voltage 4.5 V to 32 V Tj Junction temperature Tamb Ambient Temperature -40 °C to 150 °C -40 °C to 125 °C Note: Ambient test temperature = -40 °C to 125 °C Symbol Parameter Test Conditio n Min. Typ. Max. Unit <2 10 µA 50 µA 2 mA SUPPLY: -0.3V < VEN < 0.5V; VS = 14 V; Ta < 125 °C IQ Quiescent current -0.3V < VEN < 0.5V; VS = 14 V; Ta < 150 °C V EN > 3.2V; V S < 14V 1.5 Inputs, IN1 - IN4; Programming, PRG: VINlow Input voltage LOW -0.3 2.0 V VINhigh Input voltage HIGH 2.8 32 V -15 25 µA IIN Input current V IN = 0 ... 32V Enable EN: VENlow Input voltage LOW -24 1 V VENhigh Input voltage HIGH 3.2 VS V REN Input impedance -24 V < VIN < 2.5 V 10 kΩ IEN Input current 2.5 V < VIN < 32V 20 80 µA V S > 6V, IO = 0.3A 1.7 3.8 Ω VO=VS = 14 V; Ta < 125 °C <1 5 µA 25 µA 60 V 1 A 1 A VO > 4.5V 100 pF 1.3 V 15 mA Outputs OUT1- OUT4 RDSon Output ON-resistor IOLeak Leakage current VO=VS = 14 V; Ta < 150 °C VOClamp IOSC CO Output voltage during clamping time < 200µs 10 mA < IO < 0.3 A 45 Short-circuit current 4.5V < VS < 6V 0.3 V S > 6V 0.4 internal output capacities 52 0.7 Diagnostic Output DIAG VDlow Output voltage LOW IDL < 0.6mA IDmax Max. output current internal current limitation V D = 14V 4/9 1 5 L9339 ELECTRICAL CHARACTERISTICS (Continued) Symbol IDLeak Parameter Test Conditio n Min. V D = VS = 14 V; Ta < 125 °C Leakage current Typ. Max. Unit <0.1 1 µA 5 µA 2 3.5 µs 3 4.5 µs V D = VS = 14 V; Ta < 150 °C TIMING CHARCTERISTICS 4) td,on On delay time td,off Off delay time tset Enable settling time 10 µs ON or OFF Diagnostic delay time 10 µs 16 V/µs td,DIAG Sout Note : V S = 14 V, C ext = 0pF 10mA < IO < 200mA Output voltage slopes 2.5 9 All parameters are measured at Tamb = 125°C. 4. See also Fig.3 Timi ng Characteristics Figure 1. V EN V IN h ig h V IN lo w active t V PR G Non-Inverting Mode Inverting Mode V IN h ig h V IN lo w t V IN V IN h ig h V IN lo w t V OUT V S 5) 1/2 V S t t set t d,off t d,on t d,off t d,on t d,off t d,on t set 5. Output voltage slope not controlled for enable low! 5/9 L9339 FUNCTIONAL DESCRIPTION The L9339 is a quad low side driver for lines, lamps or inductive loads in automotive and industrial applications. The logic input levels are TTL and CMOS compatible. This allows the device to be driven directly by a microcontroller. For the noise immunity, all input thresholds has a hysteresis of typ. 100mV. At each input (IN and PRG) voltages from -0.3V to 32V can be applied, EN can withstand voltages from -25V to 32V. The device is activated with a ’high’ signal on ENable. ENable ’low’ switches the device into the sleep mode. In this mode the quiescent current is less than 10µA. A high signal on PRoGramming input changes the signal transfer polarity from noninverting into the inverting mode. This pin can be connected to VS or GND. The forced status of the PRG and EN pin is low, if these pins are not connected. This forced condition leads to a mode change if the PRG pin was high before the interruption. Independent of the PRoGramming input, the OUTput switches off, if the signal INput pin is not connected. Each output driver has a current limitation of min 0.4A and a independent thermal shut-down. The thermal shutdown deactivates that output, which exceeds temperature switch off level. When the junction temperature decreases 20K below this temperature threshold the output will be activated again (hysteresis of the thermal shutdown function). The slew rate of the output voltage is limited to max. 14V/µs, to reduce the electromagnetic radiation of the loads and its wiring. For inductive loads a output voltage clamp of typicaly 52V is implemented. The DIAGnostic is an open drain output with an additional series diode. The logic status depends on the PRoGramming pin. If the PRG pin is ’low’ the DIAG output becomes low, if the device works correctly. At thermal shut-down of one channel the DIAGnostic output becomes high. If the PRG pin is ’high’ this output is switched off at normal function and switched on at overtemperature. Diagnostic Table Pins EN PRG IN OUT DIAG H L L L (on) L (on) H L H H (off) L (on) H H L H (off) H (off) H H H L (on) H (off) L X X H (off) H (off) Overtemperature or supply voltage H L X H (off) * H (off) Overtemperature H H X H(off) * L(on) Correct function X = not relevant 6/9 * selective for each channel at overtemperature L9339 Figure 2. Application for Inverting Transfer Polarity BO AR D V O LT A G E 14 V VC C = 5V 1 0 µF V CC VS PR G M IC R O C ON T R OLL E R IN T M D IA G A 0 :8 A d res s d ec o d er 8 VC C = 5V EN U 71 7 L9339 D 0 IN 1 OUT 1 D 1 IN 2 OUT 2 D 2 IN 3 OUT 3 D 3 IN 4 OUT 4 2 W 12 m H 2 50 m A 240 Ω VC C IN 50 kHz 10 µH GND GND GND 5 0p F Figure 3. Application for Non Inverting Transfer Polarity BO AR D V O LTA G E 1 4 V VC C = 5 V 10µF VC C VS PR G M IC R O CO N T R OL L E R IN T M D IA G A 0 :8 8 A dres sd ec o der L9339 U 717 D 0 IN 1 OUT 1 D 1 IN 2 OUT 2 D 2 IN 3 OUT 3 D 3 IN 4 OUT 4 2 W 12 m H 25 0 mA 2 40 Ω VC C IN 50 k Hz GND V C C = 5V EN GND 10µH 5 0p F GND Note: We recommend to use the device for driving inductive loads with flyback energy E FB < 2mJ. 7/9 L9339 mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.35 2.65 0.093 0.104 A1 0.1 0.3 0.004 0.012 B 0.33 0.51 0.013 0.020 C 0.23 0.32 0.009 0.013 D 12.6 13 0.496 0.512 E 7.4 7.6 0.291 0.299 e 1.27 0.050 H 10 10.65 0.394 0.419 h 0.25 0.75 0.010 0.030 L 0.4 1.27 0.016 0.050 K OUTLINE AND MECHANICAL DATA SO20 & SO20(12+4+4) SO20 0° (min.)8° (max.) L h x 45° A B e A1 K H D 20 11 E 1 1 0 SO20MEC 8/9 C L9339 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http:/ /www.st.com 9/9