L9997ND DUAL HALF BRIDGE DRIVER HALF BRIDGE OUTPUTS WITH TYPICAL RON = 0.7Ω OUTPUT CURRENT CAPABILITY ±1.2A OPERATING SUPPLY VOLTAGE RANGE 7V TO 16.5V SUPPLY OVERVOLTAGE PROTECTION FUNCTION FOR VVS UP TO 40V VERY LOW QUIESCENT CURRENT IN STANDBY MODE < 1µA CMOS COMPATIBLE INPUTS WITH HYSTERESIS OUTPUT SHORT-CIRCUIT PROTECTION THERMAL SHUTDOWN REAL TIME DIAGNOSTIC: THERMAL OVERLOAD, OVERVOLTAGE DESCRIPTION The L9997ND is a monolithic integrated driver, in BCD technology intended to drive various loads, MULTIPOWER BCD TECHNOLOGY SO20 (12+4+4) ORDERING NUMBERS: L9997ND L9997ND013TR including DC motors. The circuit is optimized for automotive electronics enviromental conditions. BLOCK DIAGRAM VS DIAG VS 11 1 EN 10 ENABLE REFERENCE BIAS PROTECTION FUNC TIONS 5V VS OUT1 IN1 12 19 DRIVER 1 M VS IN2 OUT2 9 DRIVER 2 2 GND 4...7, 14...17 April 1999 1/9 L9997ND ABSOLUTE MAXIMUM RATINGS Symbol Parameter V VSDC DC Supply Voltage VVSP Supply Voltage Pulse (T < 400ms) IOUT DC Output Current VIN1,2 V EN Value Unit -0.3 to 26 V 40 V ±1.8 A DC Input Voltage -0.3 to 7 V Enable Input Voltage -0.3 to 7 V -0.3 to 7 V VDIAG DC Output Voltage IOUT DC Output Short-circuit Current -0.3V < VOUT < VS + 0.3V internally limited IDIAG DC Sink Current -0.3V < VDG < 7V internally limited PIN CONNECTION (Top view) VS 1 20 N.C. OUT2 2 19 OUT1 N.C. 3 18 N.C. GND 4 17 GND GND 5 16 GND GND 6 15 GND GND 7 14 GND N.C. 8 13 N.C. IN2 9 12 IN1 EN 10 11 DIAG D95AT166 PIN FUNCTIONS N. Name 1 VS 2 OUT2 3, 8, 13, 18,20 NC 4 to 7, 14 to 17 GND Function Supply Voltage Channel 2: Push-Pull power output with intrinsic body diode NC: Not Connected Ground: signal - and power - ground, heat sink 9 IN2 Input 2: Schmitt Trigger input with hysteresis (non-inverting signal control) 10 EN Enable: LOW or not connected on this input switches the device into standby mode and the outputs into tristate 11 DIAG 12 IN1 Diagnostic: Open Drain Output that switches LOW if overvoltage or overtemperature is detected Input 1: Schmitt Trigger input with hysteresis (non-inverting signal control) THERMAL DATA Symbol Value Unit TjTS Thermal Shut-down Junction Temperature Parameter 165 °C TjTSH Thermal Shut-down Threshold Hysteresis 25 K 50 K/W 15 K/W Rth j-amb Thermal Resistance Junction-Ambient Rth j-pins Thermal Resistance Junction-Pins 2 (1) With 6cm on board heatsink area. 2/9 (1) L9997ND ELECTRICAL CHARACTERISTICS (7V < VS < 16.5V; -40°C < TJ < 150°C; unless otherwise specified.) Symbol Parameter Test Condition IVS_SB Quiescent Current in Standby Mode VEN < 0.3V; VVS <16.5V; Tj < 85°(*) VEN = 0; VVS = 14.5V; Tj = 25°C Supply Current EN = HIGH, IOUT1,2 = 0 IVS VENL Low Enable Voltage VENH High Enable Voltage VENthh Enable Threshold Hysteresis IEN Enable Input Current Low Input Voltage High Input Voltage VIN1,2thh Input Threshold Hysteresis |IOUT1,2| VDIAG µA µA 6 mA 1.5 V 6 V 250 µA V 1.5 -3 2 Output Current Limitation 1.2 Diagnostic Output Drop V 0 10 1 50 µA µA 1.2 1.1 0.7 2.8 2.25 Ω Ω Ω 1.6 2.2 A 0.6 V 19 21 V 50 150 µs IDIAG = 0.5mA, EN = HIGH Overvoltage or Thermal Shutdown 17 See Fig. 2; VVS = 13.5V Measured with 93Ω load V V 1 IOUT = ±0.8A; V VS = 7V; Tj = 125°C IOUT = ±0.8A; VVS = 12V; Tj = 125°C IOUT = ±0.8A; V VS = 12V; Tj = 25°C Turn on Delay Time 90 10 3.5 ON-Resistance to Supply or GND tONLH <1 <1 1 VIN = 0 VIN = 5V, EN = HIGH Supply Overvoltage Threshold Unit 85 Input Bias Current VVSOVth Max. 2 VEN = 5V VIN1,2L RON OUT1,2 Typ. 3.5 VIN1,2H IIN1,2 Min. 30 150 µs Turn off Delay Time 10 100 µs 2 20 µs tdHL Rising Delay Time 115 250 µs tdLH Falling Delay Time 115 250 µs trHS Rise Time 30 100 µs 60 150 µs 25 100 µs 50 150 µs tONHL tOFFHL tOFFLH trLS tfHS Fall Time tfLS * Tested at 125°C and guaranteed by correlation FUNCTIONAL DESCRIPTION The L9997ND is a motor driver two half-bridge outputs, intended for driving dc motors in automotive systems. The basic function of the device is shown in the Table 1. Table 1. Table function. Status EN IN1 IN2 OUT1 OUT2 DIAG NOTE 1 L X X Tristate Tristate OFF Standby Mode 2 H H H SRC SRC OFF Recommended for braking 3 H H L SRC SNK OFF 4 H L H SNK SRC OFF 5 H L L SNK SNK OFF 6 H X X Tristate Tristate ON Overvoltage or Overtemperature 3/9 L9997ND put transistor changes in the current regulation mode, see Fig.6, with the typical output current value below 2A. The SRC output power DMOS transistors requires a voltage drop ~3V to activate the current regulation. Below this voltage drop is the device also protected. The output current heat up the power DMOS transistor, the RDSON increases with the junction temperature and decreases the output current. The power dissipation in this condition can activate the thermal shutdown . In the case of output disable due to thermal overload the output remains disabled untill the junction temperature decreases under the thermal enable threshold. Permanent short circuit condition with power dissipation leading to chip overheating and activation of the thermal shut-down leads to the thermal oscillation. The junction temperature difference between the switch ON and OFF points is the thermal hysteresis of the thermal protection. This hysteresis together with the thermal impedance and ambient temperature determines the frequency of this thermal oscillation, its typical values are in the range of 10kHz. The open drain diagnostic output needs an external pull-up resistor to a 5V supply. In systems with several L9997ND the diagnostic outputs can be connected together with a common pull-up resistor. The DIAG output current is internally limited. Fig. 1 shows a typical application diagram for the DC motor driving. To assure the safety of the circuit in the reverse battery condition a reverse protection diode D1 is necessary. The transient protection diode D2 must assure that the maximal supply voltage V VS during the transients at the VBAT line will be limited to a value lower than the absolute maximum rating for VVS. The device is activated with enable input voltage HIGH. For enable input floating (not connected) or LOW the device is in Standby Mode. Very low quiescent current is defined for VEN < 0.3V. When activating or disactivating the device by the enable input a wake-up time of 50µs is recommended. For braking of the motor the status 2 is recommended. The reason for this recommendation is that the device features higher threshold for initialisation of parasitic structures than in state 5. The inputs IN1, IN2 features internal sink current generators of 10µA, disabled in standby mode. With these input current generators the input level is forced to LOW for inputs open. In this condition the outputs are in SNK state. The circuit features an overvoltage disable function referred to the supply voltage VVS. This function assures disabling the power outputs, when the supply voltage exceeds the over voltage threshold value of 19V typ. Both outputs are forced to tristate in this condition and the diagnostic output is ON. The thermal shut-down disables the outputs (tristate) and activates the diagnostic when the junction temperature increases above the thermal shut-down threshold temperature of min. 150°C. For the start of a heavy loaded motor, if the motor current reaches the max. value, it is necessary to respect the dynamical thermal resistance junction to ambient. The outputs OUT1 and OUT2 are protected against short circuit to GND or VS, for supply voltages up to the overvoltage disable threshold. The output power DMOS transistors works in linear mode for an output current less than 1.2A. Increasing the output load current (> 1.2A) the out- Figure 1: Application Circuit Diagram. Is D1 5V VBAT 47KΩ CS D2 VS IDIAG1 DIAG1 OUT1 IIN1 CONTROL LOGIC IM IN1 IIN2 IN2 IOUT1 L9997ND M VM IEN EN OUT2 IOUT2 GND 4/9 GND L9997ND Figure 2. Timing Diagram. Standby Mode Operating Mode Overtemperature or Overvoltage Standby Mode EN IN1 IN2 DIAG t dHL t dLH tONHL t dLH t dHL t OFFLH 90% OUT1 Tristate Tristate Tristate 10% tr tONLH t dHL tf t dLH t dHL t dLH t OFFHL 90% Tristate 50% OUT2 Tristate Tristate 10% tr tf Figure 3. Typical R ON - Characteristics of Source and Sink Stage 5/9 L9997ND Figure 4. Quiescent current in standby mode versus supply voltage. Figure 5. ON-Resistance versus supply voltage. 6/9 L9997ND Figure 6. IOUT versus VOUT (pulsed measurement with TON = 500µs, TOFF = 500ms). Figure 7. Test circuit. 100µF 12V 200nF VS 10kΩ EN IN1 DIAG L9997ND IN2 V EN VIN1 5V OUT1 15Ω OUT2 15 Ω VIN2 GND 7/9 L9997ND 8/9 L9997ND Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 9/9