LDP24A ® TRANSIENT PROTECTION LOAD DUMP FEATURES n n TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP PROTECTION COMPLIANT WITH MAIN STANDARDS SUCH AS: ISO / DTR 7637 DESCRIPTION Transient voltage suppressor diodes especially useful in protecting integrated circuits, MOS, hybrids and other overvoltages sensitive semiconductors and components. AG (Plastic) ABSOLUTE RATINGS (limiting values) Symbol VPP P Parameter Peak pulse load dump overvoltage See note 1 Power dissipation on infinite heatsink IFSM Non repetitive surge peak forward current. Tstg Storage temperature range. Value Unit Tamb = 85°C 100 V Tamb = 100°C 5 W Tj initial = 25°C tp = 10 ms 500 A - 65 to + 175 °C Tj Maximum operating temperature 175 °C TL Maximum lead temperature for soldering during 10 sec at 4 mm from case. 230 °C Value Unit 15 °C/W THERMAL RESISTANCES Symbol Rth (j-a) Parameter Junction ambient thermal resistance on infinite heatsink Llead = 10 mm Note 1: For surges greater than the maximum values, the diode will present a short-circuit Anode - Cathode. April 2000 - Ed: 4B 1/5 LDP24A I ELECTRICAL CHARACTERISTICS Symbol Parameter VRM Stand-off voltage. VBR Breakdown voltage. VCL Clamping voltage. IPP Peak pulse current. αT Temperature coefficient of VBR. C IF VCL VBR V RM VF Capacitance IRM Leakage current at VRM VF Peak forward voltage drop (IFM = 10A) VF = 0.9 Volt Typ. Symbol I PP Test Conditions Ipp Pulse duration: 300ms IRM TL = 25°C TL = 85°C VRM = 24 V VRM = 24 V VBR TL = 25°C IR = 1mA VCL TL = 85°C Min. Typ. 25 see table1 αT C V I RM F = 1MHz VR = 0V Max. Unit 30 A 50 300 µA µA 32 V 40 V 10 -4 8000 10 /°C pF LOAD DUMP TEST GENERATOR CIRCUIT (SCHAFFNER NSG 506 C). Issued from ISO / DTR 7637. Table 1 Impulse Open circuit (voltage curve) (Pulse test n°5) t tr U(V) 90% Vs 10% Vbat 0 2/5 offset 10% / 13.5V Vs (V) 86.5 Vbat (V) 13.5 Ri (Ω) 2 t (ms) 200 (*) tr (ms) <10 Number 60s between each pulse t N°5 (*) Generator setting 5 LDP24A Fig. 1: Peak pulse power versus exponential pulse duration (Tj initial=85°C). Fig. 2 : Peak pulse current versus exponential pulse duration (Tj initial=85°C). Ppp(kW) Ipp(A) 200 10.0 5.0 100 2.0 50 1.0 0.5 20 0.2 0.1 tp(ms) tp(ms) 1 2 5 10 20 50 10 100 Fig. 3: Relative variation of peak pulse power versus junction temperature. 6 1.0 5 0.8 4 0.6 3 0.4 2 0.2 50 75 100 10 20 50 100 Rth(j-a)=Rth(j-l) Rth(j-a)=50°C/W 1 Tj (°C) 25 5 P(W) Ppp[Tj] / Ppp [Tj initial=85°C] 0 2 Fig. 4: Continous power dissipation versus ambient temperature. 1.2 0.0 1 Tamb(°C) 125 150 175 200 Fig. 5: Variation of thermal impedance junction to ambient versus pulse duration (printed circuit board FR4, e(Cu)=35µm, SCu=1cm2). 0 0 25 50 75 100 125 150 175 Fig. 6 : Peak forward voltage drop versus peak forward current (typical values). IFM(A) Zth(j-a)(°C/W) 200 100.0 Lleads=10mm 100 10.0 Tj=125°C 10 Tj=25°C 1.0 VFM(V) tp(s) 0.1 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3/5 LDP24A Fig. 7: Non repetitive surge peak forward current versus sinusoidal pulse duration and corresponding value of I2t. Fig. 8: Junction capacitance versus reverse applied voltage. C(nF) IFSM(A) , I²t(A²s) 5000 10 Tj initial=25°C F=1MHz Vosc=30mV I²t 2000 5 1000 500 IFSM 2 200 VR(V) tp(ms) 100 10 20 50 100 1 1 2 5 ORDER CODE LDP 24 Load Dump Protection A AG Case Stand Off Voltage 4/5 10 20 50 LDP24A PACKAGE MECHANICAL DATA AG (Plastic) B A note 1 B L1 L1 O /D /C O note 1 /D O note 2 DIMENSIONS REF. Millimeters Min. A B 0.787 8 1.35 0.315 1.45 0.053 1.27 NOTES Max. 0.354 20 L1 n Min. 9 ∅C ∅D Max. Inches 1- The lead is not controlled within zone L1. 2- The minimum axial length within which the device may be placed bent at right angles is 0.79" (20 mm). 0.057 0.050 Type Marking Package Weight Base qty Delivery mode LDP24A LDP24A AG 2.16g 100 Ammopack LDP24ARL LDP24A AG 2.16g 1000 Tape & Reel Resin meets UL94-V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5