STMICROELECTRONICS RBO08

RBO08-40G/T
®
Application Specific Discretes
A.S.D.™
REVERSED BATTERY AND
OVERVOLTAGE PROTECTION
FEATURES
■
■
■
■
■
■
■
8A DIODE TO GUARD AGAINST BATTERY
REVERSAL.
NEGATIVE OVERVOLTAGE PROTECTION
BY CLAMPING.
COMPLIANT WITH ISO/DTR 7637 STANDARD
FOR PULSES 1, 2, 3a and 3b.
SUITABLE FOR AUTOPROTECTED ALTERNATOR ENVIRONMENT.
BREAKDOWN VOLTAGE : 24 V min.
CLAMPING VOLTAGE : ± 40 V max.
MONOLITHIC STRUCTURE FOR GREATER
RELIABILITY.
D2PAK
RBO08-40G
DESCRIPTION
Designed to protect against battery reversal and
overvoltages in automotive applications, this
monolithic component offers multiple functions in
the same package :
D1 : reversed battery protection
T1 : clamping against negative overvoltages
T2 : Transil function for overvoltage protection.
TO220-AB
RBO08-40T
FUNCTIONAL DIAGRAM
3
1
2
TM : TRANSIL and ASD are trademarks of STMicroelectronics.
October 2003 - Ed: 3
1/9
RBO08-40G / RBO08-40T
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Non repetitive surge peak forward current
(Diode D1)
tp = 10 ms
80
A
DC forward current (Diode D1)
Tc = 75°C
8
A
PPP
Peak pulse power between Input and Output
(Transil T1) see note 1 Tj initial = 25°C
10/1000 µs
600
W
PPP
Peak pulse power between Pins 3 and 2 (10/1000µs)
1500
W
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 40 to + 150
150
°C
TL
Maximum lead temperature for soldering during 10 s
at 4.5mm from case for TO220-AB
IFSM
IF
260
°C
Note 1 : for a surge greater than the maximum value, the device will fail in short-circuit..
THERMAL RESISTANCE
Symbol
Rth (j-c)
Parameter
Junction to case
RBO08-40M
RBO08-40T
D1
Value
Unit
2.4
2.4
°C/W
I32
1
3
I13
Ipp32
IF
T1
2
T2
IR 32
IR M 32
VCL 31 VBR 31 VR M 31
VF 13
IR M 31
IR 31
Ipp31
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V13
VR M 32 VB R 32 VC L 32
V32
3
1
2
RBO08-40G / RBO08-40T
Symbol
Parameter
VRM31/VRM32
Stand-off voltage Transil T1 / Transil T2.
VBR31/VBR32
Breakdown voltage Transil T1 / Transil T2.
IR31/IR32
Leakage current Transil T1 / Transil T2.
VCL31/VCL32
Clamping voltage Transil T1 / Transil T2.
VF13
Forward voltage drop Diode D1.
IPP
Peak pulse current.
αT
Temperature coefficient of VBR.
C31/C32
Capacitance Transil T1 / Transil T2.
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40°C < Tamb < + 85°C)
Symbol
VF 13
Value
Test Conditions
IF = 8 A
Min.
Typ.
RBO08-40G
VF 13
Unit
1.5
V
1.7
V
1.45
V
RBO08-40G
1.3
V
RBO08-40T
1.35
V
IF = 4 A @ Tamb = 25°C
1.2
V
IF = 1 A
1.1
V
IF = 1 A @ Tamb = 25°C
1.0
V
IF = 1 A @ Tj = 85°C
0.9
V
RBO08-40T
IF = 8 A @ Tamb = 25°C
VF 13
Max.
IF = 4 A
ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C < Tamb < + 85°C)
Symbol
Value
Test Conditions
Min.
Typ.
Max.
Unit
VBR 31
IR = 1 mA
22
35
V
VBR 31
IR = 1 mA, Tamb = 25°C
24
32
V
IRM 31
VRM = 20 V
50
µA
10
µA
IRM 31
VRM = 20 V, Tamb = 25°C
VCL 31
IPP = 15A, Tj initial = 25°C
αT
Temperature coefficient of VBR
C 31
F = 1MHz
10/1000µs
VR = 0 V
40
V
9
-4
1000
10 /°C
pF
ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C < Tamb < + 85°C)
Symbol
VBR 32
Min.
IR = 1 mA
VBR 32
IR = 1 mA, Tamb = 25°C
IRM 32
VRM = 20 V
IRM 32
VRM = 20 V, Tamb = 25°C
VCL 32
IPP = 37.5 A
αT
Value
Test Conditions
Temperature coefficient of VBR
10/1000µs
Typ.
Max.
Unit
22
35
V
24
32
V
50
µA
10
µA
40
V
8.5
10-4/⊃
C
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RBO08-40G / RBO08-40T
PRODUCT DESCRIPTION
3
1
The RBO has 3 functions integrated on the same
chip.
D1 : “Diode function” in order to protect against
reversed battery operation.
T2 : “Transil function” in order to protect against
positive surge generated by electric systems
(ignition, relay. ...).
T1 : Protection againt negative surges such as
inductive overvoltages (see motor application
below).
2
BASIC APPLICATION
* The monolithic multi-function protection
(RBO) has been developed to protect sensitive semiconductors in car electronic
modules against both overvoltage and
battery reverse.
* In addition, the RBO circuit prevents
overvoltages generated by the module from
affecting the car supply network.
MOTOR DRIVER APPLICATION
BATTERY
Filter
D1
T2
MOTOR
T1
RBO
DEVICE
MOTOR CONTROL
In this application, one half of the motor drive circuit is supplied through the “RBO” and is thus protected
as per its basic function application.
The second part is connected directly to the “car supply network” and is protected as follows :
- For positive surges : T2 (clamping phase) and D1 in forward-biased.
- For negative surges : T1 (clamping phase) and T2 in forward-biased.
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RBO08-40G / RBO08-40T
PINOUT configuration in D2PAK :
- Input (1)
- Output (3)
- Gnd (2)
: Pin 1
: Pin 3
: Connected to base Tab
D1
T2
T1
TAB
PINOUT configuration in TO220AB :
- Input (1) : Pin 1
- Output (3) : Pin 3
- GND (2) : Connected to base Tab
D1
T2
T1
(TAB)
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RBO08-40G / RBO08-40T
Fig. 1 : Peak pulse power versus exponential
pulse duration (Tj initial = 85°C).
Fig. 2-1 : Clamping voltage versus peak pulse
current (Tj initial = 85°C).
Exponential waveform tp = 40 ms and tp = 1 ms
(TRANSIL T2).
Pp p (kW)
10.0
VCL (V)
45
5.0
40
2.0
tp = 40ms
1.0
35
Transil T2
tp = 1ms
0.5
30
Diode D1
0.2
0.1
Ipp(A)
tp(ms)
1
2
5
10
20
50
100
Fig. 2-2 : Clamping voltage versus peak pulse
current (Tj initial = 85°C).
Exponential waveform tp = 1 ms and tp = 20 µs
(TRANSIL T1).
25
0.1
0.2
0.5
1.0
2.0
5.0
10.0 20.0
50.0
Fig. 3 : Relative variation of peak pulse power
versus junction temperature.
Ppp[Tj]/Ppp[Tj initial=85°C]
VCL (V)
50
1.20
1.00
45
0.80
40
0.60
tp = 1ms
35
tp = 20µs
30
0.20
Ipp(A)
25
0.1
6/9
0.2
0.5
1.0
2.0
0.40
Tj initial (°C)
5.0 10.0 20.0
50.0 100.0
0.00
0
25
50
75
100
125
150
175
RBO08-40G / RBO08-40T
Fig. 4 : Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
VFM(V)
0.5
0.2
tp (s)
0.1
1E-3
1E-2
1E-1
1E+0
1E+1
Fig. 5-2 : Peak forward voltage drop versus peak
forward current (typical values) - (DIODE D1).
1.6
Fig. 5-1 : Peak forward voltage drop versus peak
forward current (typical values) - (TRANSIL T2).
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
Tj=25°C
Tj=150°C
IFM (A)
1.0
10.0
20.0
Fig. 6 : Relative variation of leakage current
versus junction temperature.
VFM(V)
1.4
1.2
1.0
Tj=25°C
0.8
0.6
0.4
0.2
0.0
0.1
Tj=150°C
IFM (A)
1.0
10.0
20.0
ORDERING INFORMATION
RBO
08
Reverse Battery &
Overvoltage Protection
-
40
G
VCL = 40V
IF(AV) = 8A
Package:
G = D2PAK
T = TO-220AB
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RBO08-40G / RBO08-40T
PACKAGE MECHANICAL DATA
D2PAK Plastic
DIMENSIONS
REF.
A
E
C2
L2
D
L
Millimeters
Min.
Typ. Max. Min.
Typ. Max.
A
4.30
4.60 0.169
0.181
A1
2.49
2.69 0.098
0.106
A2
0.03
0.23 0.001
0.009
B
0.70
0.93 0.027
0.037
B2
L3
A1
B2
R
C
B
G
A2
2.0 MIN.
FLAT ZONE
1.40
FOOT-PRINT D2PAK
16.90
10.30
5.08
1.30
3.70
8.90
8/9
0.055
C
0.45
0.60 0.017
0.024
C2
1.21
1.36 0.047
0.054
D
8.95
9.35 0.352
0.368
E
10.00
10.28 0.393
0.405
G
4.88
5.28 0.192
0.208
L
15.00
15.85 0.590
0.624
L2
1.27
1.40 0.050
0.055
L3
1.40
1.75 0.055
0.069
R
V2
Inches
V2
0.40
0°
0.016
8°
0°
8°
RBO08-40G / RBO08-40T
PACKAGE MECHANICAL DATA
TO-220AB Plastic
DIMENSIONS
REF.
A
Millimeters
Inches
Min.
Max.
Min.
Max.
14.23
15.87
0.560
0.625
a1
4.50
0.177
a2
12.70
14.70
0.500
0.579
B
10.20
10.45
0.402
0.411
b1
0.64
0.96
0.025
0.038
b2
1.15
1.39
0.045
0.055
C
4.48
4.82
0.176
0.190
c1
0.35
0.65
0.020
0.026
c2
2.10
2.70
0.083
0.106
e
2.29
2.79
0.090
0.110
F
5.85
6.85
0.230
0.270
I
3.55
4.00
0.140
0.157
L
2.54
3.00
0.100
0.118
l2
1.45
1.75
0.057
0.069
l3
0.80
1.20
0.031
0.047
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics - All rights reserved.
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