FAIRCHILD FYPF2010DNTU

FYPF2010DN
FYPF2010DN
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
• Polarity protection
TO-220F
1 2
3
1. Anode 2.Cathode 3. Anode
20A SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings (per diode) TC=25°°C unless otherwise noted
Symbol
VRRM
Parameter
Maximum Repetitive Reverse Voltage
Value
100
Units
V
VR
Maximum DC Reverse Voltage
IF(AV)
Maximum Average Rectified Current
100
V
20
IFSM
A
Maximum Forward Surge Current (per diode)
60Hz Single Half-Sine Wave
150
A
TJ, TSTG
Operating Junction and Storage Temperature
-65 to +150
°C
Value
2.8
Units
°C/W
@ TC = 105°C
Thermal Characteristics
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case (per diode)
Electrical Characteristics (per diode) TC=25 °C unless otherwise noted
Symbol
VFM *
IRM *
Parameter
Maximum Instantaneous Forward Voltage
IF = 10A
IF = 10A
IF = 20A
IF = 20A
Maximum Instantaneous Reverse Current
(per diode)
@ rated VR
Min.
Typ.
Max.
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
-
-
0.77
0.65
0.75
TC = 25 °C
TC = 125 °C
-
-
0.1
20
Units
V
mA
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
FYPF2010DN
Typical Characteristics
10
Reverse Current, IR[mA]
Forward Current, I F[A]
100
10
1
o
TJ=125 C
o
0.1
TJ=75 C
o
T J=125 C
1
o
TJ=75 C
0.1
0.01
o
T J=25 C
o
TJ=25 C
1E-3
0.01
0.0
0.5
1.0
20
1.5
40
Forward Voltage Drop, VF[V]
60
80
100
Reverse Voltage, VR[V]
Figure 1. Typical Forward Voltage Characteristics
(per diode)
Figure 2. Typical Reverse Current
vs. Reverse Voltage (per diode)
Transient Thermal Impedance [ C/W]
10
o
TJ=25 C
o
Juntion Capacitance, C J[pF]
1000
900
800
700
600
500
400
300
200
100
90
80
0
20
40
60
80
100
1
0.1
100µ
Reverse Voltage, VR[V]
10m
100m
1
10
100
Pulse Duration [s]
Figure 4. Thermal Impedance Characteristics
(per diode)
Figure 3. Typical Junction Capacitance
(per diode)
250
Max. Forward Surge Current, I FSM[A]
25
Average Forward Current, IF(AV)[A]
1m
DC
20
15
10
5
0
0
20
40
60
80
100
120
140
160
200
150
100
50
0
1
o
Case Temperature, T C [ C]
Figure 5. Forward Current Derating Curve
©2002 Fairchild Semiconductor Corporation
10
100
Number of Cycles @ 60Hz
Figure 6. Non-Repetive Surge Current
(per diode)
Rev. A, September 2002
FYPF2010DN
Package Dimensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
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CORPORATION.
As used herein:
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1