FYPF2010DN FYPF2010DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes • Polarity protection TO-220F 1 2 3 1. Anode 2.Cathode 3. Anode 20A SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings (per diode) TC=25°°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 100 Units V VR Maximum DC Reverse Voltage IF(AV) Maximum Average Rectified Current 100 V 20 IFSM A Maximum Forward Surge Current (per diode) 60Hz Single Half-Sine Wave 150 A TJ, TSTG Operating Junction and Storage Temperature -65 to +150 °C Value 2.8 Units °C/W @ TC = 105°C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Electrical Characteristics (per diode) TC=25 °C unless otherwise noted Symbol VFM * IRM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A Maximum Instantaneous Reverse Current (per diode) @ rated VR Min. Typ. Max. TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C - - 0.77 0.65 0.75 TC = 25 °C TC = 125 °C - - 0.1 20 Units V mA * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2002 Fairchild Semiconductor Corporation Rev. A, September 2002 FYPF2010DN Typical Characteristics 10 Reverse Current, IR[mA] Forward Current, I F[A] 100 10 1 o TJ=125 C o 0.1 TJ=75 C o T J=125 C 1 o TJ=75 C 0.1 0.01 o T J=25 C o TJ=25 C 1E-3 0.01 0.0 0.5 1.0 20 1.5 40 Forward Voltage Drop, VF[V] 60 80 100 Reverse Voltage, VR[V] Figure 1. Typical Forward Voltage Characteristics (per diode) Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode) Transient Thermal Impedance [ C/W] 10 o TJ=25 C o Juntion Capacitance, C J[pF] 1000 900 800 700 600 500 400 300 200 100 90 80 0 20 40 60 80 100 1 0.1 100µ Reverse Voltage, VR[V] 10m 100m 1 10 100 Pulse Duration [s] Figure 4. Thermal Impedance Characteristics (per diode) Figure 3. Typical Junction Capacitance (per diode) 250 Max. Forward Surge Current, I FSM[A] 25 Average Forward Current, IF(AV)[A] 1m DC 20 15 10 5 0 0 20 40 60 80 100 120 140 160 200 150 100 50 0 1 o Case Temperature, T C [ C] Figure 5. Forward Current Derating Curve ©2002 Fairchild Semiconductor Corporation 10 100 Number of Cycles @ 60Hz Figure 6. Non-Repetive Surge Current (per diode) Rev. A, September 2002 FYPF2010DN Package Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1