STMICROELECTRONICS M27V101

M27V101
1 Mbit (128Kb x 8) Low Voltage UV EPROM and OTP EPROM
■
LOW VOLTAGE READ OPERATION:
3V to 3.6V
■
FAST ACCESS TIME: 90ns
■
LOW POWER CONSUMPTION:
– Active Current 15mA at 5MHz
32
32
– Standby Current 20µA
■
PROGRAMMING VOLTAGE: 12.75V ± 0.25V
■
PROGRAMMING TIME: 100µs/byte (typical)
■
ELECTRONIC SIGNATURE
1
1
FDIP32W (F)
PDIP32 (B)
– Manufacturer Code: 20h
– Device Code: 05h
DESCRIPTION
The M27V101 is a low voltage 1 Mbit EPROM offered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage and is organized as 131,072 by 8
bits.
The M27V101 operates in the read mode with a
supply voltage as low as 3V. The decrease in operating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP32W (window ceramic frit-seal package)
has a transparent lid which allow the user to expose the chip to ultraviolet light to erase the bit pattern.
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
Figure 1. Logic Diagram
VCC
VPP
17
8
A0-A16
Q0-Q7
Table 1. Signal Names
A0-A16
Address Inputs
P
Q0-Q7
Data Outputs
E
E
Chip Enable
G
G
Output Enable
P
Program
VPP
Program Supply
VCC
Supply Voltage
VSS
Ground
May 1998
M27V101
VSS
AI00660B
1/15
M27V101
VCC
P
NC
A14
A13
A8
A9
A11
G
A10
E
Q7
Q6
Q5
Q4
Q3
1 32
A7
A6
A5
A4
A3
A2
A1
A0
Q0
9
M27V101
25
A14
A13
A8
A9
A11
G
A10
E
Q7
17
VSS
Q3
Q4
Q5
Q6
1
32
2
31
3
30
4
29
5
28
6
27
7
26
8
25
M27V101
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
A12
A15
A16
VPP
VCC
P
NC
VPP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
VSS
Figure 2B. LCC Pin Connections
Q1
Q2
Figure 2A. DIP Pin Connections
AI00661
AI01906
Warning : NC = Not Connected.
Warning: NC = Not Connected.
Figure 2C. TSOP Pin Connections
A new pattern can then be written to the device by
following the programming procedure. For applications where the content is programmed only one
time and erasure is not required, the M27V101 is
offered in both PDIP32, PLCC32 and TSOP32 (8
x 20 mm) packages.
A11
A9
A8
A13
A14
NC
P
VCC
VPP
A16
A15
A12
A7
A6
A5
A4
1
8
9
32
M27V101
(Normal)
16
25
24
17
AI01152B
Warning : NC = Not Connected.
2/15
G
A10
E
Q7
Q6
Q5
Q4
Q3
VSS
Q2
Q1
Q0
A0
A1
A2
A3
DEVICE OPERATION
The operating modes of the M27V101 are listed in
the Operating Modes table. A single power supply
is required in the read mode. All inputs are TTL
levels except for VPP and 12V on A9 for Electronic
Signature.
Read Mode
The M27V101 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G) is the output control and should
be used to gate data to the output pins, independent of device selection. Assuming that the addresses are stable, the address access time
(tAVQV) is equal to the delay from E to output
(tELQV). Data is available at the output after a delay
of tGLQV from the falling edge of G, assuming that
E has been low and the addresses have been stable for at least tAVQV-tGLQV.
M27V101
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
Ambient Operating Temperature (3)
–40 to 125
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
VIO (2)
Input or Output Voltage (except A9)
–2 to 7
V
Supply Voltage
–2 to 7
V
–2 to 13.5
V
–2 to 14
V
TA
VCC
VA9 (2)
A9 Voltage
Program Supply Voltage
VPP
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns.
3. Depends on range.
Table 3. Operating Modes
E
G
P
A9
VPP
Q0-Q7
Read
VIL
VIL
X
X
VCC or VSS
Data Out
Output Disable
VIL
V IH
X
X
VCC or VSS
Hi-Z
Program
VIL
V IH
VIL Pulse
X
VPP
Data In
Verify
VIL
VIL
VIH
X
VPP
Data Out
Program Inhibit
VIH
X
X
X
VPP
Hi-Z
Standby
VIH
X
X
X
VCC or VSS
Hi-Z
Electronic Signature
VIL
VIL
VIH
VID
VCC
Codes
Mode
Note: X = VIH or VIL, VID = 12V ± 0.5V.
Table 4. Electronic Signature
Identifier
A0
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
Hex Data
Manufacturer’s Code
VIL
0
0
1
0
0
0
0
0
20h
Device Code
VIH
0
0
0
0
0
1
0
1
05h
Standby Mode
The M27V101 has a standby mode which reduces
the supply current from 15mA to 20µA with low
voltage operation VCC ≤ 3.6V, see Read Mode DC
Characteristics table for details.The M27V101 is
placed in the standby mode by applying a CMOS
high signal to the E input. When in the standby
mode, the outputs are in a high impedance state,
independent of the G input.
3/15
M27V101
Table 5. AC Measurement Conditions
High Speed
Standard
Input Rise and Fall Times
≤ 10ns
≤ 20ns
Input Pulse Voltages
0 to 3V
0.4V to 2.4V
1.5V
0.8V and 2V
Input and Output Timing Ref. Voltages
Figure 3. AC Testing Input Output Waveform
Figure 4. AC Testing Load Circuit
1.3V
High Speed
1N914
3V
1.5V
3.3kΩ
0V
DEVICE
UNDER
TEST
Standard
2.4V
OUT
CL
2.0V
0.8V
0.4V
AI01822
CL = 30pF for High Speed
CL = 100pF for Standard
CL includes JIG capacitance
AI01823B
Table 6. Capacitance (1) (TA = 25 °C, f = 1 MHz)
Symbol
C IN
COUT
Parameter
Input Capacitance
Output Capacitance
Test Condit ion
Min
Max
Unit
VIN = 0V
6
pF
VOUT = 0V
12
pF
Note: 1. Sampled only, not 100% tested.
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the primary device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
4/15
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, I CC, has three segments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loading of the device at
the output.
M27V101
Table 7. Read Mode DC Characteristics (1)
(TA = 0 to 70°C or –40 to 85°C; VCC = 3.3V ± 10%; VPP = VCC)
Symbol
Parameter
Test Condition
Min
Max
Unit
0V ≤ VIN ≤ V CC
±10
µA
0V ≤ VOUT ≤ VCC
±10
µA
E = VIL, G = VIL, IOUT = 0mA,
f = 5MHz, V CC ≤ 3.6V
15
mA
E = VIH
1
mA
E > VCC – 0.2V, VCC ≤ 3.6V
20
µA
VPP = VCC
10
µA
ILI
Input Leakage Current
ILO
Output Leakage Current
ICC
Supply Current
ICC1
Supply Current (Standby) TTL
ICC2
Supply Current (Standby) CMOS
IPP
Program Current
VIL
Input Low Voltage
–0.3
0.8
V
VIH (2)
Input High Voltage
2
VCC + 1
V
VOL
Output Low Voltage
0.4
V
VOH
IOL = 2.1mA
Output High Voltage TTL
IOH = –400µA
2.4
V
Output High Voltage CMOS
IOH = –100µA
Vcc – 0.7V
V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
2. Maximum DC voltage on Output is VCC +0.5V.
Table 8A. Read Mode AC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85°; VCC = 3.3V ± 10%; VPP = VCC)
M27V101
Symbol
Alt
Parameter
Test Condition
- 90 (3)
Min
tAVQV
tACC
Address Valid to Output Valid
tELQV
tCE
tGLQV
Max
Unit
-100
Min
Max
E = VIL, G = VIL
90
100
ns
Chip Enable Low to Output Valid
G = VIL
90
100
ns
tOE
Output Enable Low to Output Valid
E = VIL
45
50
ns
tEHQZ (2)
tDF
Chip Enable High to Output Hi-Z
G = VIL
0
30
0
30
ns
tGHQZ (2)
tDF
Output Enable High to Output Hi-Z
E = VIL
0
30
0
30
ns
tAXQX
tOH
Address Transition to Output
Transition
E = VIL, G = VIL
0
0
ns
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurament conditions.
The associated transient voltage peaks can be
suppressed by complying with the two line output
control and by properly selected decoupling capacitors. It is recommended that a 0.1µF ceramic
capacitor be used on every device between VCC
and VSS. This should be a high frequency capacitor of low inherent inductance and should be
placed as close to the device as possible. In addition, a 4.7µF bulk electrolytic capacitor should be
used between VCC and VSS for every eight devices. The bulk capacitor should be located near the
power supply connection point. The purpose of the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
5/15
M27V101
Table 8B. Read Mode AC Characteristics (1)
(TA = 0 to 70°C or –40 to 85 °C; VCC = 3.3V ± 10%; VPP = Vcc)
M27V201
Symbol
Alt
Parameter
Test Conditi on
-120
Min
tAVQV
tACC
Address Valid to Output
Valid
tELQV
tCE
tGLQV
-150
Max
Min
Unit
-200
Max
Min
Max
E = VIL, G = VIL
120
150
200
ns
Chip Enable Low to
Output Valid
G = VIL
120
150
200
ns
tOE
Output Enable Low to
Output Valid
E = VIL
50
60
90
ns
tEHQZ (2)
tDF
Chip Enable High to
Output Hi-Z
G = VIL
0
40
0
50
0
70
ns
tGHQZ (2)
tDF
Output Enable High to
Output Hi-Z
E = VIL
0
40
0
50
0
70
ns
tAXQX
tOH
Address Transition to
Output Transition
E = VIL, G = VIL
0
0
0
ns
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
2. Sampled only, not 100% tested.
Figure 5. Read Mode AC Waveforms
VALID
A0-A16
tAVQV
tAXQX
E
tEHQZ
tGLQV
G
tGHQZ
tELQV
Q0-Q7
Hi-Z
DATA OUT
AI00713
Programming
The M27V101 has been designed to be fully compatible with the M27C1001 and has the same electronic signature. As a result the M27V101 can be
programmed as the M27C1001 on the same programming equipments applying 12.75V on VPP
and 6.25V on VCC by the use of the same PRESTO II algorithm. When delivered (and after each
erasure for UV EPROM), all bits of the M27V101
are in the ’1’ state. Data is introduced by selectively programming ’0’s into the desired bit locations.
6/15
Although only ’0’s will be programmed, both ’1’s
and ’0’s can be present in the data word. The only
way to change a ’0’ to a ’1’ is by die exposition to
ultraviolet light (UV EPROM). The M27V101 is in
the programming mode when VPP input is at
12.75V, E is at VIL and P is pulsed to VIL. The data
to be programmed is applied to 8 bits in parallel to
the data output pins. The levels required for the
address and data inputs are TTL. VCC is specified
to be 6.25V ± 0.25V.
M27V101
Table 9. Programming Mode AC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Symbol
Parameter
Test Condition
ILI
Input Leakage Current
VIL ≤ VIN ≤ VIH
ICC
Supply Current
IPP
Program Current
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage TTL
VID
A9 Voltage
Min
Max
Unit
±10
µA
50
mA
50
mA
–0.3
0.8
V
2
VCC + 0.5
V
0.4
V
E = VIL
IOL = 2.1mA
IOH = –400µA
2.4
V
11.5
12.5
V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
Table 10. Programming Mode AC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V
Symbol
Alt
Parameter
Test Condition
Min
Max
tAVPL
tAS
Address Valid to Program Low
2
µs
tQVPL
tDS
Input Valid to Program Low
2
µs
tVPHPL
tVPS
VPP High to Program Low
2
µs
t VCHPL
tVCS
VCC High to Program Low
2
µs
tELPL
tCES
Chip Enable Low to Program Low
2
µs
tPLPH
tPW
Program Pulse Width
95
tPHQX
tDH
Program High to Input Transition
2
µs
tQXGL
tOES
Input Transition to Output Enable Low
2
µs
tGLQV
tOE
Output Enable Low to Output Valid
tGHQZ (2)
tDFP
Output Enable High to Output Hi-Z
0
tGHAX
tAH
Output Enable High to Address
Transition
0
105
Unit
µs
100
ns
130
ns
ns
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
2. Sampled only, not 100% tested.
7/15
M27V101
Figure 6. Programming and Verify Modes AC Waveforms
VALID
A0-A16
tAVPL
Q0-Q7
DATA IN
tQVPL
DATA OUT
tPHQX
VPP
tGLQV
tVPHPL
tGHQZ
VCC
tVCHPL
tGHAX
E
tELPL
P
tPLPH
tQXGL
G
PROGRAM
VERIFY
AI00714
Figure 7. Programming Flowchart
VCC = 6.25V, VPP = 12.75V
n=0
P = 100µs Pulse
NO
++n
= 25
YES
FAIL
NO
VERIFY
++ Addr
YES
Last
Addr
NO
YES
CHECK ALL BYTES
1st: VCC = 6V
2nd: VCC = 4.2V
AI00715C
8/15
PRESTO II Programming Algorithm
PRESTO II Programming Algorithm allows the
whole array to be programmed, with a guaranteed
margin, in a typical time of 13 seconds. Programming with PRESTO II involves in applying a sequence of 100µs program pulses to each byte until
a correct verify occurs (see Figure 7). During programming and verify operation, a MARGIN MODE
circuit is automatically activated in order to guarantee that each cell is programmed with enough
margin. No overprogram pulse is applied since the
verify in MARGIN MODE at VCC muh higher than
3.6V provides necessary margin to each programmed cell.
Program Inhibit
Programming of multiple M27V101s in parallel
with different data is also easily accomplished. Except for E, all like inputs including G of the parallel
M27V101 may be common. A TTL low level pulse
applied to a M27V101’s P input, with E low and
VPP at 12.75V, will program that M27V101. A high
level E input inhibits the other M27V101s from being programmed.
Program Verify
A verify (read) should be performed on the programmed bits to determine that they were correctly programmed. The verify is accomplished with E
and G at VIL, P at VIH, VPP at 12.75V and VCC at
6.25V.
M27V101
On-Board Programming
The M27V101 can be directly programmed in the
application circuit. See the relevant Application
Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25°C ± 5°C ambient temperature range that is required when programming the M27V101. To activate the ES mode,
the programming equipment must force 11.5V to
12.5V on address line A9 of the M27V101, with
VPP=VCC=5V. Two identifier bytes may then be
sequenced from the device outputs by toggling address line A0 from VIL to VIH. All other address
lines must be held at VIL during Electronic Signature mode.
Byte 0 (A0=VIL) represents the manufacturer code
and byte 1 (A0=VIH) the device identifier code. For
the STMicroelectronics M27V101, these two identifier bytes are given in Table 4 and can be readout on outputs Q0 to Q7. Note that the M27V101
and M27C1001 have the same identifier bytes.
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristics of the M27V101 is
such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 Å. It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 Å range. Research
shows that constant exposure to room level fluorescent lighting could erase a typical M27V101 in
about 3 years, while it would take approximately 1
week to cause erasure when exposed to direct
sunlight. If the M27V101 is to be exposed to these
types of lighting conditions for extended periods of
time, it is suggested that opaque labels be put over
the M27V101 window to prevent unintentional erasure. The recommended erasure procedure for
the M27V101 is exposure to short wave ultraviolet
light which has a wavelength of 2537 Å. The integrated dose (i.e. UV intensity x exposure time) for
erasure should be a minimum of 15 W-sec/cm2.
The erasure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with
12000 µW/cm2 power rating. The M27V101
should be placed within 2.5 cm (1 inch) of the lamp
tubes during the erasure. Some lamps have a filter
on their tubes which should be removed before
erasure.
9/15
M27V101
Table 11. Ordering Information Scheme
Example:
M27V101
-90 K
1
TR
Device Type
Speed
-90 (1) = 90 ns
-100 = 100 ns
-120 = 120 ns
-150 = 150 ns
-200 = 200 ns
Package
F = FDIP32W
B = PDIP32
K = PLCC32
N = TSOP32: 8 x 20mm
Temperature Range
1 = –0 to 70 °C
6 = –40 to 85 °C
Optio ns
TR = Tape & Reel Packing
Note: 1. High Speed, see AC Characteristics section for further information.
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you.
10/15
M27V101
Table 12. FDIP32W - 32 pin Ceramic Frit-seal DIP, with window, Package Mechanical Data
Symb
mm
Typ
inches
Min
Max
A
Typ
Min
5.72
Max
0.225
A1
0.51
1.40
0.020
0.055
A2
3.91
4.57
0.154
0.180
A3
3.89
4.50
0.153
0.177
B
0.41
0.56
0.016
0.022
B1
–
–
–
–
C
1.45
0.23
0.30
0.009
0.012
D
41.73
42.04
1.643
1.655
–
–
1.500
–
–
0.600
D2
38.10
E
15.24
E1
–
–
13.06
13.36
0.057
–
–
0.514
0.526
e
2.54
–
–
0.100
–
–
eA
14.99
–
–
0.590
–
–
eB
16.18
18.03
0.637
0.710
L
3.18
S
1.52
2.49
–
–
α
4°
11°
N
32
∅
7.11
0.125
0.060
0.098
–
–
4°
11°
0.280
32
Figure 8. FDIP32W - 32 pin Ceramic Frit-seal DIP, with window, Package Outline
A2
A3
A1
B1
B
A
L
e
α
eA
D2
C
eB
D
S
N
∅
E1
E
1
FDIPW-a
Drawing is not to scale.
11/15
M27V101
Table 13. PDIP32 - 32 pin Plastic DIP, 600 mils width, Package Mechanical Data
mm
inches
Symb
Typ
Min
Max
A
–
A1
Min
Max
5.08
–
0.200
0.38
–
0.015
–
A2
3.56
4.06
0.140
0.160
B
0.38
0.51
0.015
0.020
–
–
–
–
C
0.20
0.30
0.008
0.012
D
41.78
42.04
1.645
1.655
B1
1.52
Typ
0.060
D2
38.10
–
–
1.500
–
–
E
15.24
–
–
0.600
–
–
13.59
13.84
0.535
0.545
E1
e1
2.54
–
–
0.100
–
–
eA
15.24
–
–
0.600
–
–
eB
15.24
17.78
0.600
0.700
L
3.18
3.43
0.125
0.135
S
1.78
2.03
0.070
0.080
α
0°
10°
0°
10°
N
32
32
Figure 9. PDIP32 - 32 pin Plastic DIP, 600 mils width, Package Outline
A2
A1
B1
B
A
L
α
e1
C
eA
D
S
N
E1
E
1
PDIP
Drawing is not to scale.
12/15
M27V101
Table 14. PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular, Package Mechanical Data
Symb
mm
Typ
inches
Min
Max
A
2.54
A1
Typ
Min
Max
3.56
0.100
0.140
1.52
2.41
0.060
0.095
A2
–
0.38
–
0.015
B
0.33
0.53
0.013
0.021
B1
0.66
0.81
0.026
0.032
D
12.32
12.57
0.485
0.495
D1
11.35
11.56
0.447
0.455
D2
9.91
10.92
0.390
0.430
E
14.86
15.11
0.585
0.595
E1
13.89
14.10
0.547
0.555
E2
12.45
13.46
0.490
0.530
–
–
–
–
0.00
0.25
0.000
0.010
–
–
–
–
e
1.27
F
R
0.89
0.050
0.035
N
32
32
Nd
7
7
Ne
9
9
CP
0.10
0.004
Figure 10. PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular, Package Outline
D
D1
A1
A2
1 N
B1
E1 E
Ne
e
D2/E2
F
B
0.51 (.020)
1.14 (.045)
A
Nd
R
CP
PLCC
Drawing is not to scale.
13/15
M27V101
Table 15. TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 20mm, Package Mechanical Data
mm
inches
Symb
Typ
Min
Max
A
Typ
Min
1.20
Max
0.047
A1
0.05
0.15
0.002
0.007
A2
0.95
1.05
0.037
0.041
B
0.15
0.27
0.006
0.011
C
0.10
0.21
0.004
0.008
D
19.80
20.20
0.780
0.795
D1
18.30
18.50
0.720
0.728
E
7.90
8.10
0.311
0.319
-
-
-
-
L
0.50
0.70
0.020
0.028
α
0°
5°
0°
5°
N
32
e
0.50
0.020
32
CP
0.10
0.004
Figure 11. TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 20mm, Package Outline
A2
1
N
e
E
B
N/2
D1
A
CP
D
DIE
C
TSOP-a
Drawing is not to scale.
14/15
A1
α
L
M27V101
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