STMICROELECTRONICS SD1542-42

SD1542-42
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.
..
..
.
.
DESIGNED FOR HIGH POWER PULSED
IFF
600 WATTS (min.) IFF 1030 or 1090 MHz
REFRACTORY GOLD METALLIZATION
6.0 dB MIN. GAIN
LOW THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
INPUT MATCHED, COMMON BASE
CONFIGURATION
.400 x .500 2LFL (M112)
hermetically sealed
ORDER CO DE
SD1542-42
BRANDING
SD1542-42
PIN CONNECTION
DESCRIPTION
The SD1542-42 is a hermetically sealed, gold metallized, silicon NPN power transistor. The SD154242 is designed for applications requiring high peak
power and low duty cycles such as IFF. The
SD1542-42 is packaged in a hermetic metal/ceramic package with internal input matching, resulting in improved broadband performance and
low thermal resistance.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Valu e
Un it
55
V
45
A
Power Dissipation*
1670
W
TJ
Junction Temperature
+200
°C
T STG
Storage Temperature
− 65 to +200
°C
0.06
°C/W
VCC
IC
PDISS
Parameter
Collector-Supply Voltage*
Device Current*
(TC ≤ 100°C)
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance*
* Applies only to rated RF operation.
June 14, 1995
1/4
SD1542-42
ELECTRICAL SPECIFICATIONS (T case = 25 °C)
STATIC
Symbo l
Value
T est Co nditions
Min .
T yp.
Max.
Unit
BVCBO
IC = 25 mA
IE = 0 mA
65
—
—
V
BVCER
IC = 25 mA
RBE = 10 Ω
65
—
—
V
BVEBO
IE = 10 mA
IC = 0 mA
3.5
—
—
V
ICES
VCE = 50 V
VBE = 0 V
—
—
60
mA
hFE
VCE = 5 V
IC = 2 A
10
—
250
—
DYNAMIC
Symbo l
Valu e
Test Cond ition s
Min.
T yp.
Max.
Un it
POUT
ηC
f = 1090 MHz
PIN = 150 W
VCC = 50 V
600
680
—
W
f = 1090 MHz
PIN = 150 W
VCC = 50 V
35
40
—
%
GP
f = 1090 MHz
PIN = 150 W
VCC = 50 V
6.0
6.6
—
dB
Note:
Pul se Wi dth
=
10 µ S ec, Duty Cycle
=
1%
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
900
800
A
B
800
700
700
A - Test Circuit
B - 1030MHz Circuit
500
Vcc =50V
Tc=25°C
PW=10µsec
DC=1%
400
300
0
June 14, 1995
60
80 100 120 140
POWERINPUT(Watts)
160
180
POWEROUTPUT
(Watts)
POWEROUTPUT
(Watts)
600
600
200
POWER OUTPUT vs FREQUENCY
500
400
300
200
Test Circuit turned narrowband
100
1030
1050
PIN= 150W
VCC= 50V
TC= 25°C
PW= 10µsec
DC=1%
1070
1090
FREQUENCY(MHz)
1110
2/4
SD1542-42
TEST CIRCUIT (1090 MHz)
Ref.: Dwg. No. C125410
1030 MHz TYPICAL CIRCUIT
June 14, 1995
3/4
SD1542-42
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0112 rev. G
Information furnished is believed to be accurate and reliable. However, SGS-T HOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIE S
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
June 14, 1995
4/4