STMICROELECTRONICS SD5000

SD5000
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
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PRELIMINARY DATA
GOLD METALLIZATION
EMITTER SITE BALLASTING
INTERNAL INPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC PACKAGE
COMMON EMITTER CONFIGURATION
P OUT = 1.5 W MIN. WITH 9.5 dB GAIN
.280 4L STUD (M122)
epoxy sealed
ORDER CODE
SD5000
BRANDING
S10A015
PIN CONNECTION
DESCRIPTION
The SD5000 is a NPN Silicon Transistor designed
for high gain linear performance at 1000 MHz.
This part uses gold metallized die and polysilicon
site ballasting to achieve high reliability and ruggedness.
The SD5000 can be used for applications such
as Telecommunications, Radar, ECM, Space and
other commercial and military systems.
1. Collector
2. Emitter
3. Base
4. Emitter
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
50
V
VCES
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
3.5
V
Device Current
1.0
A
Power Dissipation
7.0
W
IC
PDISS
TJ
Junction Temperature
+200
°C
T STG
Storage Temperature
− 65 to +150
°C
25
°C/W
THERMAL DATA
RTH(j-c)
November 1992
Junction-Case Thermal Resistance
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SD5000
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Symbol
Valu e
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 10mA
50
—
—
V
BVEBO
IE = 5mA
3.5
—
—
V
BVCES
IC = 10mA
50
—
—
V
BVCEO
IC = 5mA
23
—
—
V
ICBO
VCB = 28V
—
0.2
—
mA
hFE
VCE = 5V
18
—
200
—
IC = 100mA
DYNAMIC
Symbol
Value
Test Conditions
Min.
Typ.
Max.
Unit
POUT 1dB f = 1 GHz
VCC = 20 V
IC = 220 mA
1.5
—
—
W
GP
f = 1 GHz
VCC = 20 V
IC = 220 mA
9.5
—
—
dB
VSWR
f = 1 GHz
VCC = 20 V
IC = 220 mA
—
—
25:1
—
COB
f = 1 MHz
VCB = 20 V
—
—
4.0
pF
:
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SD5000
IMPEDANCE DATA
FREQ.
1000 MHz
Z IN (Ω)
4.0 + j 3.3
ZCL (Ω)
20.8 + j 33.3
TEST CIRCUIT
B1, B2 : Ferrite Beads
C1,C2
C3
C4
C5,C6
C7,C8
: 120 pF Chip Capacitor
: .4 - 2.5 pF Johanson Capacitor
: .8 - 8 pF Johanson Capacitor
: 220 pF Chip Capacitor
C9,C10 : 1000 pF Chip Capacitor
C11
: .1µF Capacitor
C12,C13 : 15,000 pF EMI Filter
L1,L2
: 5 Turn Choke; Wire Diameter .025”, I.D. 0.125”
Substrate material: Er = 10.2, H = .050”, 1oz. Copper
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SD5000
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0122
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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