DF005S thru DF10S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers FEATURES • UL recognition, file number E54214 • Ideal for automated placement ~ • High surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C ~ • Solder dip 260 °C, 40 s ~ • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC ~ Case Style DFS TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. PRIMARY CHARACTERISTICS IF(AV) 1A VRRM 50 V to 1000 V IFSM 50 A IR 5 µA VF 1.1 V TJ max. 150 °C MECHANICAL DATA Case: DFS Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT DF005S DF01S DF02S DF04S DF06S DF08S DF10S Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward output rectified current at TA = 40 °C (1) IF(AV) 1.0 A Peak forward surge current single half sine-wave superimposed on rated load IFSM 50 A I2t 10 A 2s TJ, TSTG - 55 to + 150 °C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range Note: (1) Units mounted on P.C.B. with 0.51 x 0.51" (13 x 13 mm) copper pads Document Number: 88573 Revision: 30-Jan-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 DF005S thru DF10S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT Maximum instantaneous forward voltage drop per diode 1.0 A VF 1.1 V Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C TA = 125 °C IR 5.0 500 µA CJ 25 pF Typical junction capacitance per diode (1) Note: (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL DF005S DF01S DF02S DF04S RθJA RθJL Typical thermal resistance (1) DF06S DF08S DF10S 40 15 UNIT °C/W Note: (1) Units mounted on P.C.B. with 0.51 x 0.51" (13 x 13 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE DF06S-E3/45 0.399 45 50 Tube DF06S-E3/77 0.399 77 1500 13" diameter paper tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 60 60 Hz Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Output Current (A) 1.0 0.5 P.C.B. Mounted on 0.51 x 0.51" (13 x 13 mm) Copper Pads 0 TJ = 150 °C Single Sine-Wave 50 40 30 20 10 1.0 Cycle 0 20 40 60 80 100 120 140 160 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Figure 1. Derating Curve Output Rectified Current Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88573 Revision: 30-Jan-08 DF005S thru DF10S Vishay General Semiconductor 100 1 0.1 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0.01 0.4 10 1 0.6 0.8 1.0 1.2 10 1 1.4 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 10 Transient Thermal Impedance (°C/W) 100 Instantaneous Reverse Current (µA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TJ = 125 °C 1 0.1 TJ = 50 °C 20 40 60 80 1 0.1 0.01 0.01 0 10 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Heating Time (s) Figure 4. Typical Reverse Leakage Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style DFS Mounting Pad La yout 0.205 (5.2) 0.195 (5.0) 0.047 (1.20) 0.040 (1.02) 0.047 MIN. (1.20 MIN.) 0.404 MAX. (10.26 MAX.) 0.060 MIN. (1.52 MIN.) 0.404 (10.3) 0.386 (9.80) 0.335 (8.51) 0.320 (8.13) 45° 0.255 (6.5) 0.245 (6.2) 0.130 (3.3) 0.120 (3.05) 0.013 (0.330) 0.009 (0.241) 0.060 (1.524) 0.040 (1.016) Document Number: 88573 Revision: 30-Jan-08 0.205 (5.2) 0.195 (5.0) 0.013 (0.330) 0.003 (0.076) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000