GI2401 thru GI2404 Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction TO-220AB • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 260 °C, 40 s 3 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 1 PIN 1 PIN 2 PIN 3 CASE TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 16 A VRRM 50 V to 200 V IFSM 125 A Epoxy meets UL 94V-0 flammability rating trr 35 ns VF 0.895 V TJ max. 150 °C Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Case: TO-220AB Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GI2401 GI2402 GI2403 GI2404 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at TC = 100 °C IF(AV) 16 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 125 A TJ, TSTG - 65 to + 150 °C Operating junction and storage temperature range Document Number: 88624 Revision: 30-Aug-07 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 GI2401 thru GI2404 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode IF = 4 A IF = 8 A IF = 4 A IF = 8 A Maximum DC reverse current at rated DC blocking voltage per diode SYMBOL TJ = 25 °C TJ = 25 °C TJ = 100 °C TJ = 100 °C VF TC = 25 °C TC = 100 °C IR GI2401 GI2402 GI2403 GI2404 UNIT 0.900 0.975 0.800 0.895 V 50 150 5.0 500 µA Maximum reverse recovery time per diode IF = 0 .5 A, IR = 1.0 A, Irr = 0.25A trr 35 ns Typical junction capacitance per diode 4.0 V, 1 MHz CJ 85 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GI2401 GI2402 RθJA RθJC Typical thermal resistance per diode (1) GI2403 GI2404 UNIT 16 2.2 °C/W Note: (1) Thermal resistance from junction to ambient and from junction to case per leg mounted on heatsink ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.85 45 50/tube Tube 1.85 45 50/tube Tube GI2401-E3/45 TO-220AB GI2401HE3/45 (1) Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 20 16 Infinite Heatsink, TC 12 8 Ambient Air Rating, TA 4 TC = 125 °C 8.3 ms Single Half Sine-Wave 125 100 75 50 25 0 0 0 25 50 75 100 125 150 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Figure 1. Maximum Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88624 Revision: 30-Aug-07 GI2401 thru GI2404 Vishay General Semiconductor 1000 TJ = 125 °C TJ = 25 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 Pulse Width = 300 µs 1 % Duty Cycle 1 0.1 0.01 0.2 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode Instantaneous Reverse Leakage Current (µA) 100 TJ = 125 °C 10 TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.104 (2.65) 0.096 (2.45) Document Number: 88624 Revision: 30-Aug-07 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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