VISHAY GI2402

GI2401 thru GI2404
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
TO-220AB
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 260 °C, 40 s
3
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
1
PIN 1
PIN 2
PIN 3
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
16 A
VRRM
50 V to 200 V
IFSM
125 A
Epoxy meets UL 94V-0 flammability rating
trr
35 ns
VF
0.895 V
TJ max.
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Case: TO-220AB
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GI2401
GI2402
GI2403
GI2404
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
V
Maximum RMS voltage
VRMS
35
70
105
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward rectified current at TC = 100 °C
IF(AV)
16
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
125
A
TJ, TSTG
- 65 to + 150
°C
Operating junction and storage temperature range
Document Number: 88624
Revision: 30-Aug-07
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
GI2401 thru GI2404
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
per diode
IF = 4 A
IF = 8 A
IF = 4 A
IF = 8 A
Maximum DC reverse current at rated
DC blocking voltage per diode
SYMBOL
TJ = 25 °C
TJ = 25 °C
TJ = 100 °C
TJ = 100 °C
VF
TC = 25 °C
TC = 100 °C
IR
GI2401
GI2402
GI2403
GI2404
UNIT
0.900
0.975
0.800
0.895
V
50
150
5.0
500
µA
Maximum reverse recovery time
per diode
IF = 0 .5 A, IR = 1.0 A,
Irr = 0.25A
trr
35
ns
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
85
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GI2401
GI2402
RθJA
RθJC
Typical thermal resistance per diode (1)
GI2403
GI2404
UNIT
16
2.2
°C/W
Note:
(1) Thermal resistance from junction to ambient and from junction to case per leg mounted on heatsink
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AB
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.85
45
50/tube
Tube
1.85
45
50/tube
Tube
GI2401-E3/45
TO-220AB
GI2401HE3/45
(1)
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
150
Resistive or Inductive Load
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
20
16
Infinite Heatsink, TC
12
8
Ambient Air Rating, TA
4
TC = 125 °C
8.3 ms Single Half Sine-Wave
125
100
75
50
25
0
0
0
25
50
75
100
125
150
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward
Surge Current Per Diode
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2
For technical questions within your region, please contact one of the following:
[email protected], [email protected], PDD-Euro[email protected]
Document Number: 88624
Revision: 30-Aug-07
GI2401 thru GI2404
Vishay General Semiconductor
1000
TJ = 125 °C
TJ = 25 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
0.01
0.2
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Instantaneous Reverse Leakage
Current (µA)
100
TJ = 125 °C
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.104 (2.65)
0.096 (2.45)
Document Number: 88624
Revision: 30-Aug-07
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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