KBP005M thru KBP10M, 3N246 thru 3N252 Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • UL recognition file number E54214 • Ideal for printed circuit board e4 • High surge current capability • High case dielectric strength − ~ ~ + ~ ~ − • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC + Case Style KBPM TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for switching power supply, home appliances, office equipment, and telecommunication applications. PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 50 V to 1000 V IFSM 60 A IR 5 µA MECHANICAL DATA Case: KBPM VF 1.0 V Epoxy meets UL 94V-0 flammability rating TJ max. 150 °C Terminals: Silver plated leads, solderable per J-STD-002 and JESD22-B102 E4 suffix for consumer grade Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL KBP 005M KBP 01M KBP 02M KBP 04M KBP 06M KBP 08M KBP 10M 3N246 3N247 3N248 3N249 3N250 3N251 3N252 UNIT Maximum repetitive peak reverse voltage (1) VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage (1) VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage (1) VDC 50 100 200 400 600 800 1000 V Maximum average forward output rectified current at TA = 40 °C IF(AV) 1.5 A IFSM 60 40 A I2t 10 A2s TJ, TSTG - 55 to + 150 °C Peak forward surge current single half sine-wave (1) TA = 25 °C TJ = 150 °C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range (1) Note: (1) JEDEC registered values Document Number: 88531 Revision: 15-Apr-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 KBP005M thru KBP10M, 3N246 thru 3N252 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage drop per diode (1) 1.0 A 1.57 A Maximum DC reverse current at rated DC blocking voltage per diode (1) Typical junction capacitance per diode SYMBOL KBP 005M KBP 01M KBP 02M KBP 04M KBP 06M KBP 08M KBP 10M 3N246 3N247 3N248 3N249 3N250 3N251 3N252 UNIT VF 1.0 1.3 V TA = 25 °C TA = 125 °C IR 5.0 500 µA 4.0 V, 1 MHz CJ 15 pF Note: (1) JEDEC registered values THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL KBP 005M KBP 01M KBP 02M KBP 04M KBP 06M KBP 08M KBP 10M 3N246 3N247 3N248 3N249 3N250 3N251 3N252 RθJA RθJL Typical thermal resistance (1) 40 13 UNIT °C/W Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x 12 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE KBP06M-E4/45 1.895 45 30 Tube KBP06M-E4/51 1.895 51 600 Anti-static PVC tray 3N250-E4/45 1.895 45 30 Tube 3N250-E4/51 1.895 51 600 Anti-static PVC tray RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 60 60 Hz Resistive or Inductive Load 1.4 1.2 P.C.B. Mounted on 0.47 x 0.47" (12 x 12 mm) Copper Pads 1.0 0.8 0.6 Capacitive Load Ipk 5.0 = 10 IAV 20 (per leg) 0.4 0.2 Peak Forward Surge Current (A) Bridge Output Full Wave Rectified Current Average (A) 1.6 Single Half Sine-Wave 50 TA = 25 °C 40 30 TJ = 150 °C 20 10 1.0 Cycle 0 0 20 40 60 80 100 120 140 150 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Figure 1. Derating Curve Output Rectified Current Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88531 Revision: 15-Apr-08 KBP005M thru KBP10M, 3N246 thru 3N252 Vishay General Semiconductor 100 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 1.6 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode Instantaneous Reverse Current (µA) 10 TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style KBPM 0.600 (15.24) 0.560 (14.22) 0.125 x 45° (3.2) 0.460 (11.68) 0.500 (12.70) 0.420 (10.67) 0.460 (11.68) 0.60 (15.2) MIN. 0.034 (0.86) 0.028 (0.76) DIA. 0.200 (5.08) 0.180 (4.57) 0.50 (12.7) MIN. 0.060 (1.52) 0.160 (4.1) 0.140 (3.6) 0.105 (2.67) 0.085 (2.16) Polarity shown on front side of case: positive lead by beveled corner Document Number: 88531 Revision: 15-Apr-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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