MBR3035PT thru MBR3060PT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation 3 2 • Solder dip 260 °C, 40 s 1 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TO-247AD (TO-3P) PIN 1 PIN 2 PIN 3 CASE TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 35 V to 60 V IFSM 200 A VF 0.60 V, 0.65 V TJ max. 150 °C MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Maximum working peak reverse voltage VRWM 35 45 50 60 V 35 45 50 60 Maximum DC blocking voltage VDC Maximum average forward rectified current (Fig. 1) IF(AV) 30 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 A Peak repetitive reverse surge current per diode (1) IRRM Voltage rate of change at (rated VR) dV/dt 10 000 V/µs TJ - 65 to + 150 °C TSTG - 65 to + 175 °C Operating junction temperature range Storage temperature range 2.0 1.0 V A Note: (1) 2.0 µs pulse width, f = 1.0 kHz Document Number: 88676 Revision: 07-May-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 MBR3035PT thru MBR3060PT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 20 A IF = 20 A IF = 30 A IF = 30 A Maximum instantaneous forward voltage per diode (1) Maximum instantaneous reverse current at rated DC blocking voltage per diode (1) SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C UNIT VF 0.60 0.76 0.72 0.75 0.65 - V IR 1.0 60 5.0 100 mA Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT Thermal resistance from junction to case per diode RθJC 1.4 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-247AD UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 6.13 45 30/tube Tube MBR3045PT-E3/45 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified) 30 300 Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 24 18 12 6 MBR3035PT - MBR3045PT MBR3050PT & MBR3060PT TJ = TJ Max. 8.3 ms Single Half Sine-Wave 250 200 150 100 50 0 0 0 50 100 150 1 100 10 Case Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88676 Revision: 07-May-08 MBR3035PT thru MBR3060PT Vishay General Semiconductor 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 1 TJ = 25 °C 0.1 1000 MBR3035PT - MBR3045PT MBR3050PT & MBR3060PT MBR3035PT - MBR3045PT MBR3050PT & MBR3060PT 0.01 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 0.1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 MBR3035PT - MBR3045PT MBR3050PT & MBR3060PT Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 10 TJ = 125 °C 1 TJ = 75 °C 0.1 0.01 TJ = 25 °C 0.001 0 20 40 60 80 10 1 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.078 (1.98) REF. 10 0.170 (4.3) 0.840 (21.3) 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 10° TYP. Both Sides 3 1° REF. Both Sides 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.117 (2.97) 0.118 (3.0) 0.108 (2.7) 0.795 (20.2) 0.775 (19.6) 0.048 (1.22) 0.044 (1.12) 0.225 (5.7) 0.205 (5.2) Document Number: 88676 Revision: 07-May-08 0.030 (0.76) 0.020 (0.51) PIN 1 PIN 2 PIN 3 CASE For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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