STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-CHANNEL 550V @ Tjmax-0.30Ω - 12A TO-220/FP/D²/I²PAK Zener-Protected SuperMESH™MOSFET Table 1: General Features TYPE STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP ■ ■ ■ ■ ■ ■ VDSS (@Tjmax) 550 V 550 V 550 V 550 V Figure 1: Package RDS(on) < 0.35 < 0.35 < 0.35 < 0.35 Ω Ω Ω Ω ID 12 A 12 A 12 A 12 A TYPICAL RDS(on) = 0.30 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES LOW INPUT CAPACITANCE AND GATE CHARGE 100% AVALANCHE TESTED LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. 3 3 1 TO-220 2 1 2 TO-220FP 3 12 1 D2PAK 3 I2PAK Figure 2: Internal Schematic Diagram APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STB12NM50T4 B12NM50 D²PAK TAPE & REEL STB12NM50-1 B12NM50 I²PAK TUBE STP12NM50 P12NM50 TO-220 TUBE STP12NM50FP P12NM50FP TO-220FP TUBE Rev. 2 March 2005 1/14 STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1 Table 3: Absolute Maximum ratings Symbol Parameter Value Unit STB12NM50 STB12NM50 STP12NM50 VGS STP12NM50FP Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 12 12 (*) A ID Drain Current (continuous) at TC = 100°C 7.5 7.5 (*) A Drain Current (pulsed) 48 48 (*) A IDM () PTOT VISO dv/dt (1) Tj Tstg Total Dissipation at TC = 25°C 160 35 W Derating Factor 1.28 0.28 W/°C -- 2500 V Insulation Winthstand Voltage (DC) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 15 V/ns -65 to 150 -65 to 150 °C °C ( ) Pulse width limited by safe operating area (1) ISD ≤12A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220/ D²PAK / I²PAK TO-220FP 0.78 3.57 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W Table 5: Avalanche Characteristics Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 6 A 400 mJ ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On /Off Symbol Parameter Test Conditions V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA RDS(on Static Drain-source On Resistance VGS = 10 V, ID = 6 A 2/14 Min. Typ. Max. 500 3 Unit V 1 10 µA µA ± 100 nA 4 5 V 0.30 0.35 Ω STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss Parameter Test Conditions Min. Forward Transconductance VDS = 15 V , ID = 6 A Typ. Max. Unit 5.5 S 1000 180 25 pF pF pF Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 Equivalent Output Capacitance VGS = 0 V, VDS = 0 to 400 V 90 pF td(on) tr Turn-on Delay Time Rise Time VDD = 250 V, ID = 6 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) 20 10 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400 V, ID = 12 A, VGS = 10 V (see Figure 20) 28 8 18 Rg Gate Input Resistance f = 1MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 1.6 COSS eq (3). 39 nC nC nC Ω Table 8: Source Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit 12 48 A A 1.5 V ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 12 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A, di/dt = 100 A/µs VDD = 100V (see Figure 18) 270 2.23 16.5 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A, di/dt = 100 A/µs VDD = 100V, Tj = 150°C (see Figure 18) 340 3 18 ns µC A trr Qrr IRRM trr Qrr IRRM (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/14 STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1 Figure 3: Safe Operating Area For TO-220/ D²PAK/I²PAK Figure 6: Thermal Impedance TO-220/D²PAK/ I²PAK Figure 4: Safe Operating Area For TO-220FP Figure 7: Thermal Impedance For TO-220FP Figure 5: Output Characteristics Figure 8: Transfer Characteristics 4/14 STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1 Figure 9: Transconductance Figure 12: Static Drain-Source On Resistance Figure 10: Gate Charge vs Gate-source Voltage Figure 13: Capacitance Variations Figure 11: Normalized Gate Threshold Voltage vs Temperature Figure 14: Normalized On Resistance vs Temperature 5/14 STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1 Figure 15: Source-Drain Forward Characteristics 6/14 STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1 Figure 16: Unclamped Inductive Load Test Circuit Figure 19: Unclamped Inductive Wafeform Figure 17: Switching Times Test Circuit For Resistive Load Figure 20: Gate Charge Test Circuit Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/14 STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1 TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 8/14 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/14 STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 10 E1 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 R 0º 0.126 0.015 4º 3 V2 0.4 1 10/14 STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1 TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MAX. MIN. A 4.40 MIN. TYP 4.60 0.173 TYP. 0.181 MAX. A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 11/14 STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 MAX. 0.075 0.082 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 12/14 inch 0.933 0.956 MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1 Table 9: Revision History Date Revision 27-Sep-2004 09-Mar-2005 1 2 Description of Changes Complete version New Stylesheet 13/14 STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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