STP2NK90Z - STD2NK90Z STD2NK90Z-1 N-CHANNEL 900V - 5Ω - 2.1A TO-220/DPAK/IPAK Zener-Protected SuperMESH™MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS(on) ID Pw STD2NK90Z STD2NK90Z-1 STP2NK90Z 900 V 900 V 900 V < 6.5 Ω < 6.5 Ω < 6.5 Ω 2.1 A 2.1 A 2.1 A 70 W 70 W 70 W ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 5 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. 3 1 DPAK TO-220 3 2 1 IPAK Figure 2: Internal Schematic Diagram APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STD2NK90ZT4 D2NK90Z DPAK TAPE & REEL STD2NK90Z-1 D2NK90Z IPAK TUBE STP2NK90Z P2NK90Z TO-220 TUBE Rev. 2 October 2004 1/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Table 3: Absolute Maximum ratings Symbol Parameter Value Unit STD2NK90Z STD2NK90Z-1 STP2NK90Z VDS VDGR VGS Drain-source Voltage (VGS = 0) 900 V Drain-gate Voltage (RGS = 20 kΩ) 900 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 2.1 A ID Drain Current (continuous) at TC = 100°C 1.3 A Drain Current (pulsed) 8.4 A Total Dissipation at TC = 25°C 70 W Derating Factor 0.56 W/°C Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2000 V 4.5 V/ns -55 to 150 -55 to 150 °C °C IDM () PTOT VESD(G-S) dv/dt (1) Tj Tstg Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤2.1A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max 1.78 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl Table 5: Avalanche Characteristics Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 2.1 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 150 mJ Table 6: Gate-Source Zener Diode Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On /Off Symbol Parameter Test Conditions V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA RDS(on Static Drain-source On Resistance VGS = 10 V, ID = 1.05 A Min. Typ. Max. 900 3 Unit V 1 50 µA µA ± 10 µA 3.75 4.5 V 5 6.5 Ω Typ. Max. Unit Table 8: Dynamic Symbol gfs (1) Parameter Test Conditions Min. Forward Transconductance VDS = 15 V , ID = 1.05 A 2.3 S Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 485 50 10 pF pF pF Equivalent Output Capacitance VGS = 0 V, VDS = 0 to 720 V 24 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time VDD = 450 V, ID = 1 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) 21 11 43 40 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 720 V, ID = 2 A, VGS = 10 V (see Figure 22) Ciss Coss Crss COSS eq (3). 19.5 3.4 10.8 27 nC nC nC Typ. Max. Unit 2.1 8.4 A A 1.6 V Table 9: Source Drain Diode Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 2.1 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2 A, di/dt = 100 A/µs VDD = 50V (see Figure 20) 415 1.5 7.2 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2 A, di/dt = 100 A/µs VDD = 50V, Tj = 150°C (see Figure 20) 515 1.9 7.5 ns µC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Figure 3: Safe Operating Area For TO-220 Figure 6: Thermal Impedance TO-220 Figure 4: Safe Operating Area For DPAK/IPAK Figure 7: Thermal Impedance For DPAK/IPAK Figure 5: Output Characteristics Figure 8: Transfer Characteristics 4/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Figure 9: Transconductance Figure 12: Static Drain-Source On Resistance Figure 10: Gate Charge vs Gate-source Voltage Figure 13: Capacitance Variations Figure 11: Normalized Gate Threshold Voltage vs Temperature Figure 14: Normalized On Resistance vs Temperature 5/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Figure 15: Source-Drain Forward Characteristics Figure 16: Maximum Avalanche Energy vs Temperature 6/13 Figure 17: Normalized BVDSS vs Temperature STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Figure 18: Unclamped Inductive Load Test Circuit Figure 21: Unclamped Inductive Wafeform Figure 19: Switching Times Test Circuit For Resistive Load Figure 22: Gate Charge Test Circuit Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 8/13 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 9/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 2.20 2.40 0.087 TYP. 0.094 MAX. A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 10/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. inch MAX. MIN. 1.5 C 12.8 D 20.2 G 16.4 N 50 A0 6.8 7 0.267 0.275 10.4 10.6 0.409 0.417 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 MAX. 12.992 0.059 13.2 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 MAX. B0 B1 MIN. 330 T TAPE MECHANICAL DATA inch MAX. 0.059 0.065 0.073 1.574 16.3 0.618 0.641 * on sales type 11/13 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Table 10: Revision History Date Revision 27-Sep-2004 30-Sep-2004 1 2 12/13 Description of Changes First release Complete version STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 13/13