STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH™ MOSFET Table 1: General Features TYPE STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 ■ ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) 600 600 600 600 < < < < V V V V 8.5 8.5 8.5 8.5 Ω Ω Ω Ω ID Pw 1A 1A 0.4 A 0.4 A 30 W 30 W 3W 3.3 W TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 TO-92 (Ammopack) 2 3 1 2 1 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. DPAK 2 3 SOT-223 IPAK Figure 2: Internal Schematic Diagram APPLICATIONS ■ LOW POWER BATTERY CHARGERS ■ SWITH MODE LOW POWER SUPPLIES(SMPS) ■ LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS) Table 2: Order Codes Part Number Marking Package Packaging STD1NK60T4 D1NK60 DPAK TAPE & REEL STD1NK60-1 D1NK60 IPAK TUBE STQ1HNK60R 1HNK60R TO-92 BULK STQ1HNK60R-AP 1HNK60R TO-92 AMMOPAK STN1HNK60 1HNK60 SOT-223 TAPE & REEL Rev. 2 November 2004 1/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Table 3: Absolute Maximum ratings Symbol Parameter Value DPAK / IPAK VDS VDGR VGS ID ID Unit TO-92 SOT-223 Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V Drain Current (continuous) at TC = 25°C 1.0 0.4 0.4 Drain Current (continuous) at TC = 100°C A 0.63 0.25 0.25 A IDM () Drain Current (pulsed) 4 1.6 1.6 A PTOT Total Dissipation at TC = 25°C 30 3 3.3 W 0.24 0.025 0.025 W/°C Derating Factor dv/dt (1) Tj Tstg Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 3 V/ns -55 to 150 °C () Pulse width limited by safe operating area (1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 4: Thermal Data DPAK/IPAK TO-92 SOT-223 Unit Rthj-case Thermal Resistance Junction-case Max 4.16 -- -- °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 120 37.87 (#) °C/W Rthj-lead Thermal Resistance Junction-lead Max -- 40 -- °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 260 °C (#) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 1 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 25 mJ ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol Test Conditions Drain-source Breakdown Voltage ID = 1mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.5 A V(BR)DSS 2/15 Parameter Min. Typ. Max. 600 2.25 Unit V 1 50 µA µA ±100 nA 3 3.7 V 8 8.5 Ω STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol gfs (1) Parameter Test Conditions Forward Transconductance VDS = 15 V, ID= 0.5 A Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 td(on) tr td(off) tr Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge Min. Typ. Max. Unit 1 S 156 23.5 3.8 pF pF pF VDD = 300 V, ID = 0.5 A, RG= 4.7 Ω, VGS = 10 V (Resistive Load see, Figure 21) 6.5 5 19 25 ns ns ns ns VDD = 480V, ID = 1 A, VGS = 10V, RG= 4.7 Ω (see, Figure 23) 7 1.1 3.7 10 nC nC nC Typ. Max. Unit 1 4 A A 1.6 V Table 8: Source Drain Diode Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 1.0 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, di/dt = 100 A/µs VDD = 25V, Tj = 25°C (see test circuit, Figure 22) 140 240 3.3 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, di/dt = 100 A/µs VDD = 25V, Tj = 150°C (see test circuit, Figure 22) 229 377 3.3 ns µC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 3/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 3: .Safe Operating Area For SOT-223 Figure 6: Thermal Impedance For SOT-223 Figure 4: Safe Operating Area For DPAK/IPAK Figure 7: Thermal Impedance For DPAK/IPAK Figure 5: Safe Operating Area For TO-92 Figure 8: Thermal Impedance For TO-92 4/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 9: Output Characteristics Figure 12: Transfer Characteristics Figure 10: Transconductance Figure 13: Gate Charge vs Gate-source Voltage Figure 11: Capacitance Variations Figure 14: Static Drain-source On Resistance 5/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 15: Normalized Gate Thereshold Voltage vs Temperature Figure 18: Normalized On Resistance vs Temperature Figure 16: Source-Drain Forward Characteristics Figure 19: Normalized BVDSS vs Temperature Figure 17: Maximum Avalanche Energy vs Temperature Figure 20: Max Id Current vs Tc 6/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Figure 21: Switching Times Test Circuit For Resistive Load Figure 23: Gate Charge Test Circuit Figure 22: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 TO-92 MECHANICAL DATA mm. inch DIM. MIN. MAX. MIN. TYP. MAX. A 4.32 4.95 0.170 0.194 0.020 b 0.36 0.51 0.014 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V 8/15 TYP 5° 5° STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 TO-92 AMMOPACK DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A1 4.45 4.95 0.170 0.194 T 3.30 3.94 0.130 0.155 T1 1.6 T2 2.3 0.56 0.06 0.09 d 0.41 0.016 0.022 P0 12.5 12.7 12.9 0.49 0.5 0.51 P2 5.65 6.35 7.05 0.22 0.25 0.27 2.54 2.94 0.09 0.1 0.11 2 -0.08 19 0.69 0.71 0.74 F1, F2 2.44 delta H -2 W 17.5 W0 5.7 6 6.3 0.22 0.23 0.24 W1 8.5 9 9.25 0.33 0.35 0.36 18 W2 0.5 H 18.5 H0 15.5 16 H1 D0 0.08 0.02 20.5 0.72 0.80 16.5 0.61 0.63 0.65 0.15 0.157 0.16 25 3.8 4 4.2 t 0.9 L 11 l1 3 delta P -1 0.98 0.035 0.43 0.11 1 -0.04 0.04 9/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 10o V A1 10o 0.02 P008B 10/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 1.00 0.024 L2 L4 V2 0.8 0.60 0 o 0.031 8 o 0 o 0.039 0o P032P_B 11/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 12/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. inch MAX. MIN. 1.5 C 12.8 D 20.2 G 16.4 N 50 A0 6.8 7 0.267 0.275 10.4 10.6 0.409 0.417 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 MAX. 12.992 0.059 13.2 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 MAX. B0 B1 MIN. 330 T TAPE MECHANICAL DATA inch MAX. 0.059 0.065 0.073 1.574 16.3 0.618 0.641 * on sales type 13/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Table 9: Revision History Date Revision 22-Nov-2004 2 14/15 Description of Changes Added SOT-223 Package and new stylesheet STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 15/15