STMICROELECTRONICS STW130NS04ZB

STP130NS04ZB
STB130NS04ZB - STW130NS04ZB
N-CHANNEL CLAMPED - 7 mΩ - 80A TO-220/D²PAK/TO-247
FULLY PROTECTED MESH OVERLAY™ MOSFET
Figure 1: Package
Table 1: General Features
TYPE
STP130NS04ZB
STB130NS04ZB
STW130NS04ZB
■
■
■
■
VDSS
RDS(on)
ID
CLAMPED
CLAMPED
CLAMPED
< 9 mΩ
< 9 mΩ
< 9 mΩ
80 A
80 A
80 A
TYPICAL RDS(on) = 7 mΩ
100% AVALANCHE TESTED
LOW CAPACITANCE AND GATE CHARGE
175°C MAXIMUM JUNCTION TEMPERATURE
DESCRIPTION
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of the new technology coupled with the extra clamping capabilities make this
product particularly suitable for the harshest operation conditions such as those encountered in the
automotive environment .Any other application requiring extra ruggedness is also recommended.
3
1
3
1
2
D²PAK
TO-220
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH SWITCHING CURRENT
■ LINEAR APPLICATIONS
Table 2: Order Codes
Sales Type
Marking
Package
Packaging
STP130NS04ZB
P130NS04ZB
TO-220
TUBE
STB130NS04ZBT4
B130NS04ZB
D²PAK
TAPE & REEL
STW130NS04ZB
W130NS04ZB
TO-247
TUBE
Rev. 2
February 2005
1/12
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
CLAMPED
V
VDG
Drain-gate Voltage
CLAMPED
V
VGS
Gate- source Voltage
CLAMPED
V
ID
Drain Current (continuous) at TC = 25°C
80
A
ID
Drain Current (continuous) at TC = 100°C
60
A
Drain Gate Current (continuous)
± 50
mA
IDG
Gate Source Current (continuous)
± 50
mA
IDM ()
Drain Current (pulsed)
320
A
PTOT
Total Dissipation at TC = 25°C
300
W
Derating Factor
2.0
W/°C
4
KV
-55 to 175
°C
IGS
VESD(G-S)
Tj
Tstg
Gate-Source ESD(HBM-C=100 pF, R=1.5 KΩ)
Max Operating Junction Temperature
Storage Temperature
() Pulse width limited by safe operating area
Table 4: Thermal Data
TO-220
Rthj-case
Thermal Resistance Junction-case
Max
Rthj-pcb (*)
Thermal Resistance Junction-pcb
Max
--
Thermal Resistance Junction-ambient
Max
62.5
Rthj-a
Tl
Maximum Lead Temperature For Soldering
Purpose (1.6 mm from case, for 10 sec)
D²PAK
TO-247
0.50
Unit
°C/W
35
--
--
50
°C/W
300
°C
(*)When mounted on 1 inch² FR4 2oZ Cu
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
80
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 30 V)
500
mJ
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
33
Unit
Clamped Voltage
ID = 1 mA, VGS = 0
-40 < Tj < 175 °C
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = 16 V,Tj = 25 °C
VDS = 16 V,Tj = 125 °C
10
100
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±10 V,Tj = 25 °C
10
µA
VGSS
Gate-Source
Breakdown Voltage
IGS = ±100 µA
VGS(th)
Gate Threshold Voltage
VDS = VGS = ID = 1 mA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V ,ID = 40 A
V(BR)DSS
V
18
V
2
7
4
V
9
mΩ
Table 7: Dynamic
Symbol
Parameter
Test Conditions
Forward Transconductance
VDS = 15 V, ID = 40 A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
td(on)
tf
td(off)
tf
Qg
Qgs
Qgd
gfs
Min.
Typ.
Max.
Unit
50
S
VDS = 25 V, f = 1MHz, VGS = 0
2700
1275
285
pF
pF
pF
Turn-on Delay Time
Fall Time
Turn-off Delay Time
Fall Time
VDD = 17.5 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
40
220
170
100
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 20 V, ID = 80 A,
VGS = 10 V
(see Figure 17)
80
20
27
105
nC
nC
nC
Typ.
Max.
Unit
80
320
A
A
1.5
V
Table 8: Source Drain Diode
Symbol
Parameter
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 80 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80 A, di/dt = 100A/µs
VDD = 25V, Tj = 150°C
(see Figure 16)
trr
Qrr
IRRM
Test Conditions
Min.
90
0.18
4
ns
µC
A
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Figure 3: Safe Operating Area
Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Figure 9: Gate Charge vs Gate-source Voltage
Figure 12: Normalized On Resistance vs Temperature
Figure 10: Normalized Gate Thereshold Voltage vs Temperature
Figure 13: Source-drain Diode Forward Characteristics
Figure 11: Capacitance Variations
Figure 14: Normalized BVDSS vs Temperature
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Figure 15: Switching Times Test Circuit For
Resistive Load
Figure 16: Test Circuit For Diode Recovery Behaviour
6/12
Figure 17: Gate Charge Test Circuit
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
TO-263 (D 2PAK) MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
4.32
MIN.
4.57
0.178
0.180
A1
0.00
0.25
0.00
0.009
TYP.
MAX.
b
0.71
0.91
0.028
0.350
b2
1.15
1.40
0.045
0.055
c
0.46
0.61
0.018
0.024
c2
1.22
1.40
0.048
0.055
D
8.89
9.40
0.350
D1
8.01
E
10.04
e
8/12
TYP
9.02
0.355
0.370
0.315
10.28
0.395
2.54
0.404
0.010
H
13.10
13.70
0.515
0.540
L
1.30
1.70
0.051
0.067
L1
1.15
1.39
0.045
0.054
L2
1.27
1.77
0.050
0.069
L4
2.70
3.10
0.106
0.122
V2
0°
8°
0°
8°
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
0.620
0.214
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
5.50
0.216
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
MAX.
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
10/12
inch
0.933 0.956
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Table 9: Revision History
Date
Revision
10-June-2004
14-Jan-2005
1
2
Description of Changes
First Release.
Inserted D²PAK, Complete version.
11/12
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
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