STB135N10 STP135N10 N-CHANNEL 100V - 0.007 Ω - 135A D²PAK/TO-220 LOW GATE CHARGE STripFET™ POWER MOSFET TARGET DATA ■ ■ ■ ■ TYPE VDSS RDS(on) ID STB135N10 STP135N10 100 V 100 V <0.009 Ω <0.009 Ω 135 A(*) 135 A(*) TYPICAL RDS(on) = 0.007Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) 3 1 D2PAK TO-263 (Suffix “T4”) 3 1 2 TO-220 DESCRIPTION This MOSFET is the result of STMicroelectronics’s well established and consolidated STripFET technology utilizing the most recent layout optimization. The device exhibits extremely low on-resistance, gate charge and diode’s reverse recovery charge Qrr making it the ideal switch in a very large spectrum of applications such as Automotive, Consumer, Telecom and Industrial. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ PRIMARY SWITCH IN TELECOM DC-DC CONVERTER ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ 42V AUTOMOTIVE APPLICATIONS ■ SYNCHRONOUS RECTIFICATION ■ DIESEL INJECTION ■ PWM UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 100 V Drain-gate Voltage (RGS = 20 kΩ) 100 V VGS Gate- source Voltage ± 20 V ID(*) Drain Current (continuous) at TC = 25°C 135 A ID Drain Current (continuous) at TC = 100°C 96 A Drain Current (pulsed) 540 A Total Dissipation at TC = 25°C 150 W 1 W/°C VDS VDGR IDM(1) Ptot Parameter Derating Factor dv/dt (2) Peak Diode Recovery voltage slope TBD V/ns EAS (3) Single Pulse Avalanche Energy TBD mJ -55 to 175 °C Tstg Tj Storage Temperature Operating Junction Temperature (1) Pulse width limited by safe operating area. (*) Value limited by wire bonding (2) ISD ≤ 40A, di/dt ≤ 600A/µs, VDD ≤BVDSS, T j ≤ TJMAX. (3) Starting T j = 25 oC, ID = 40A, VDD = 50V July 2003 This is preliminary information on a new product forseen to be developped. Details are subject to change without notice 1/8 STB135N10 STP135N10 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V V(BR)DSS Min. Typ. Max. 100 Unit V 1 10 µA µA ±100 nA Max. Unit 4 V 0.007 0.009 Ω Typ. Max. Unit ON (5) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 67.5 A Min. Typ. 2 DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (5) Forward Transconductance VDS = 25 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz VGS = 0 ID = 67.5 A Min. TBD S 6350 890 250 pF pF pF STB135N10 STP135N10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 67.5 A VDD = 50 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) TBD TBD Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 50 V ID= 135 A VGS= 5 V TBD TBD TBD 95 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Test Conditions Min. ID = 67.5 A VDD = 50 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) Turn-off Delay Time Fall Time TBD TBD ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (1) Source-drain Current Source-drain Current (pulsed) VSD (5) Forward On Voltage ISD = 135 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 135 A VDD = 25 V Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM (1 )Pulse width limited by safe operating area. (5) Pulsed: Pulse duration = 300 µs, duty cycle Test Conditions Min. Typ. VGS = 0 TBD TBD TBD Max. Unit 135 540 A A 1.3 V ns µC A 1.5 %. 3/8 STB135N10 STP135N10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/8 STB135N10 STP135N10 D2PAK MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 10.4 0.394 D1 E 8 10 E1 G 0.315 8.5 0.409 0.334 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 8° 0° R V2 0.4 0° 0.015 8° 5/8 STB135N10 STP135N10 TO-220 MECHANICAL DATA DIM. 6/8 mm. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.40 0.645 L3 28.90 1.137 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 STB135N10 STP135N10 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A inch MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 1.574 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 7/8 STB135N10 STP135N10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8