STB90NF3LL N-CHANNEL 30V - 0.0048 Ω - 80A D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STB90NF3LL ■ ■ ■ ■ ■ VDSS RDS(on) ID 30 V < 0.0055 Ω 80 A(#) TYPICAL RDS(on) = 0.0048 Ω @ 10 V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5 V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) 3 1 D2PAK TO-263 (Suffix “T4”) DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) V V Drain Current (continuous) at TC = 25°C 80 A Drain Current (continuous) at TC = 100°C 80 A Drain Current (pulsed) 320 A Total Dissipation at TC = 25°C 200 W Derating Factor 1.3 W/°C -55 to 175 °C ID(#) ID Tstg Tj V 30 Gate- source Voltage Ptot Unit 30 ± 16 VGS IDM(•) Value Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area. (#) Value limited by wire bonding September 2002 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/7 STB90NF3LL THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 0.75 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 4.5 V ID = 40 A ID = 40 A Min. Typ. 1 V 0.0048 0.0070 0.0055 0.0090 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/7 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz VGS = 0 ID = 40 A Min. TBD S 3000 950 190 pF pF pF STB90NF3LL ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 40 A VDD = 15 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 3) 30 225 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 24 V ID= 80 A VGS= 5 V 39 14 21 51 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Test Conditions Min. ID = 40 A VDD = 15 V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 3) Turn-off Delay Time Fall Time 37 24 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 80 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 80 A VDD = 10 V Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM (*)Pulsed: Pulse duration = 300 µs, duty cycle (•)Pulse width limited by safe operating area. Test Conditions Min. Typ. VGS = 0 55 115 3.5 Max. Unit 80 320 A A 1.3 V ns nC A 1.5 %. 3/7 STB90NF3LL Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 STB90NF3LL D2PAK MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 10.4 0.394 D1 E 8 10 E1 G 0.315 8.5 0.409 0.334 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 8° 0° R V2 0.4 0° 0.015 8° 5/7 STB90NF3LL D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 1.574 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 6/7 inch MIN. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB90NF3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. 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