STB160NF3LL N-CHANNEL 30V - 0.0026 Ω - 160A D2PAK STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE ST160NF3LL ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID 30 V <0.003 Ω 160 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE LOGIC LEVEL DEVICE 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 D2PAK TO-263 (Suffix “T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SWITCHING SPEED ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ■ SOLENOID AND RELAY DRIVERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Value Unit 30 V 30 V Gate- source Voltage ± 15 V ID(∗) Drain Current (continuous) at TC = 25°C 160 A ID Drain Current (continuous) at TC = 100°C 160 A Drain Current (pulsed) 640 A Total Dissipation at TC = 25°C 300 W VGS IDM(•) Ptot Derating Factor EAS (1) Tstg Tj Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area. (*) Current Limited by Package 2 W/°C 1.2 J -55 to 175 °C (1) Starting Tj = 25 oC, ID = 80A, VDD = 20V May 2002 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/7 STB160NF3LL THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 0.5 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 15 V V(BR)DSS VGS = 0 Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 4.5 V ID = 80 A ID = 80 A Min. Typ. 1 V 0.0026 0.0032 0.0030 0.0043 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/7 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz VGS = 0 ID =80 A Min. 60 S 6200 1720 300 pF pF pF STB160NF3LL ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON (*) Symbol td(on) tr Qg Qgs Qgd Parameter Test Conditions Min. Typ. Max. Unit Turn-on Time Rise Time ID = 80 A VDD = 15 V VGS = 4.5 V RG = 4.7 Ω (Resistive Load, Figure 3) 50 350 Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=24V ID=160A VGS=5V 95 25 45 125 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF(*) Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 80 A VDD = 15 V VGS = 4.5 V RG = 4.7Ω, (Resistive Load, Figure 3) 150 120 ns ns SOURCE DRAIN DIODE(*) Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 160 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 160 A di/dt = 100A/µs Tj = 150°C VDD = 15 V (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 90 200 5 Max. Unit 160 640 A A 1.3 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by Tjmax 3/7 STB160NF3LL Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 STB160NF3LL D2PAK MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 10.4 0.394 D1 E 8 10 E1 G 0.315 8.5 0.409 0.334 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 8° 0° R V2 0.4 0° 0.015 8° 5/7 STB160NF3LL D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 1.574 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 6/7 inch MIN. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB160NF3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. 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